PNP Plastic-Encapsulate Transistor

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中等功率双极型晶体管

SILICON PNP EPITAXIAL TRANSISTOR

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SILICON PNP EPITAXIAL TRANSISTOR

文件：199.38 Kbytes Page：4 Pages

SILICON PNP EPITAXIAL TRANSISTOR

文件：199.38 Kbytes Page：4 Pages

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：卷带（TR） 描述：TRANS PNP 50V 2A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SILICON PNP EPITAXIAL TRANSISTOR

文件：199.38 Kbytes Page：4 Pages

SILICON PNP EPITAXIAL TRANSISTOR

文件：199.38 Kbytes Page：4 Pages

SILICON PNP EPITAXIAL TRANSISTOR

文件：199.38 Kbytes Page：4 Pages

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SC2655

PNP EPITAXIAL SILICON TRANSISTOR

DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. FEATURES * Low collector saturation voltage: VCE(SAT)=-0.5V(MAX) (IC=-1A) * High speed switching time: tSTG=1.0μs(TYP) * Complement to UTC 2SC2655

PNP General Purpose Transistors

PNP General Purpose Transistors P/b Lead(Pb)-Free

TO-92MOD Plastic-Encapsulated Transistors

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PNP EPITAXIAL SILICON TRANSISTOR

DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. FEATURES * Low collector saturation voltage: VCE(SAT)=-0.5V(MAX) (IC=-1A) * High speed switching time: tSTG=1.0μs(TYP) * Complement to UTC 2SC2655