PNPSiliconPlastic-EncapsulateTransistor

Features •Capableof0.4WattsofPowerDissipation. •Collector-current:-0.15A •Collector-baseVoltage:-50V •Operatingandstoragejunctiontemperaturerange:-55°Cto+125°C •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Marking:A1015 •LeadFreeFinish/R

PNPSiliconPlastic-EncapsulateTransistor

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PNPSiliconPlastic-EncapsulateTransistor

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PNPTransistor

Features ●Highvoltageandhighcurrent VCEO:=-50V(min.),IC=-150mA(max.) ●Lowniose:NF=1dB(Typ.)atf=1KHz

TECHNICALSPECIFICATIONSOFPNPEPITAXIALPLANARTRANSISTOR

Description DesignedforuseindriverstageofAFamplifiergeneralpurposeamplification.

PNPSILICONTRANSISTOR

2SA1015isPNPsiliconplanartransistordesignedforaudiofrequencygeneralpurposeamplifierapplicationsanddriverstageamplifierapplications.

AudioFrequencyAmplifierApplicationsLowNoiseAmplifierApplications

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LOWFREQUENCYPNPAMPLIFIERTRANSISTOR

文件：143.93 Kbytes Page：4 Pages

TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess)

AudioFrequencyGeneralPurposeAmplifierApplications DriverStageAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V(min), IC=−150mA(max) •ExcellenthFElinearity:hFE(2)=80(typ.)atVCE=−6V,IC=−150mA

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：散装 描述：TRANS PNP 50V 0.15A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：带盒（TB） 描述：TRANS PNP 50V 0.15A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个