PNP Silicon Plastic-Encapsulate Transistor

Features • Capable of 0.4Watts of Power Dissipation. • Collector-current: -0.15A • Collector-base Voltage: -50V • Operating and storage junction temperature range: -55°C to +125°C • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking:A1015 • Lead Free Finish/R

PNP Silicon Plastic-Encapsulate Transistor

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PNP Silicon Plastic-Encapsulate Transistor

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中等功率双极型晶体管

PNP SILICON TRANSISTOR

2SA1015 is PNP silicon planar transistor designed for audio frequency general purpose amplifier applications and driver stage amplifier applications.

PNP Transistor

Features ● High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) ● Low niose: NF=1dB(Typ.) at f=1KHz

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in driver stage of AF amplifier general purpose amplification.

LOW FREQUENCY PNP AMPLIFIER TRANSISTOR

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Audio Frequency Amplifier Applications Low Noise Amplifier Applications

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PNP Silicon Plastic-Encapsulate Transistor

文件：390.75 Kbytes Page：3 Pages

PNP Silicon Plastic-Encapsulate Transistor

文件：633.47 Kbytes Page：3 Pages

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：卷带（TR） 描述：TRANS PNP 50V 0.15A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个