位置：首页 > IC中文资料第5839页 > 2N7269
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
RadiationHardenedPowerMOSFETSurfaceMount(SMD-1)200V,26A,N-channel,RadHardHEXFET™Technology Features Singleeventeffect(SEE)hardened LowRDS(on) Lowtotalgatecharge Simpledriverequirements Hermeticallysealed Electricallyisolated Ceramiceyelets Lightweight SurfaceMount ESDrating:Class3AperMIL-STD-750,Method1020 PotentialApplications | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   | |
RadiationHardenedPowerMOSFETSurfaceMount(SMD-1)200V,26A,N-channel,RadHardHEXFET™Technology Features Singleeventeffect(SEE)hardened LowRDS(on) Lowtotalgatecharge Simpledriverequirements Hermeticallysealed Electricallyisolated Ceramiceyelets Lightweight SurfaceMount ESDrating:Class3AperMIL-STD-750,Method1020 PotentialApplications | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(TO-254AA) InternationalRectifier’sRAD-HardTMHEXFET®technologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.Thesedeviceshavebeen | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
RadiationHardenedPowerMOSFETSurfaceMount(SMD-1)200V,26A,N-channel,RadHardHEXFET™Technology Features Singleeventeffect(SEE)hardened LowRDS(on) Lowtotalgatecharge Simpledriverequirements Hermeticallysealed Electricallyisolated Ceramiceyelets Lightweight SurfaceMount ESDrating:Class3AperMIL-STD-750,Method1020 PotentialApplications | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | |
2N7269产品属性
- 类型
描述
- 型号
2N7269
- 功能描述
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 26A I(D) | TO-254AA
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
SOP |
8000 |
只做原装现货 |
|||
IR |
21+ |
SOP |
6688 |
十年老店,原装正品 |
|||
IR |
22+ |
SOP |
6000 |
终端可免费供样,支持BOM配单 |
|||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
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2N7269规格书下载地址
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2N7269数据表相关新闻
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2019-11-8
DdatasheetPDF页码索引
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