位置:JANSF2N7269U > JANSF2N7269U详情
JANSF2N7269U中文资料
JANSF2N7269U数据手册规格书PDF详情
Features
Single event effect (SEE) hardened
Low RDS(on)
Low total gate charge
Simple drive requirements
Hermetically sealed
Electrically isolated
Ceramic eyelets
Light weight
Surface Mount
ESD rating: Class 3A per MIL-STD-750, Method 1020
Potential Applications
DC-DC converter
Motor drives
Description
IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications. This
technology has over a decade of proven performance and reliability in satellite applications. These devices have
been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low
gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching
and temperature stability of electrical parameters.
JANSF2N7269U产品属性
- 类型
描述
- 型号
JANSF2N7269U
- 制造商
International Rectifier
- 功能描述
HIREL HEXFET RHD QPL - Bulk
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
MSC |
2447 |
20 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IR |
22+ |
SOP |
6000 |
终端可免费供样,支持BOM配单 |
|||
IR |
23+ |
SOP |
8000 |
只做原装现货 |
|||
IR |
23+ |
SOP |
7000 |
||||
MICROCHIP/微芯 |
2406+ |
33000 |
诚信经营!进口原装!量大价优! |
JANSF2N7269U 资料下载更多...
JANSF2N7269U 芯片相关型号
- 355-040-520-212
- 357-016-525-101
- 357-016-525-102
- 357-016-525-103
- 357-016-525-104
- 357-016-525-107
- 357-016-525-108
- 357-016-525-112
- 357-016-525-158
- 357-016-525-168
- 387-014-559-612
- 387-014-559-658
- 387-014-559-668
- 387-014-559-678
- 387-072-521-204
- 387-072-521-207
- 387-072-521-208
- 387-072-521-212
- 387-072-521-268
- 56F8014
- 627W3WK3624-1N2
- 627W3WK3624-1N5
- 627W3WK3624-1NA
- 627W3WK3624-1ND
- 627W3WK3624-2N2
- 627W3WK3624-2N5
- ATS-09H-143-C3-R0
- BZX8850S-C33
- C1812X393MHGACTU
- TMS29LF040-10C5FML
Datasheet数据表PDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
International Rectifier
International Rectifier Corporation(简称IRF)是一家全球领先的功率半导体制造商,成立于1947年,总部位于美国加利福尼亚州。IRF专注于开发和提供高效能的功率管理解决方案,其产品广泛应用于汽车、工业、消费电子、航空航天、通信和计算等多个领域。公司以其功率MOSFET闻名,提供多种类型的整流二极管,包括肖特基二极管和超快恢复二极管,同时还开发IGBT(绝缘栅双极晶体管)和电源管理IC。IRF在功率半导体领域的创新和技术积累为其赢得了良好的声誉,并于2014年被英飞凌科技股份公司(Infineon Technologies AG)收购,这一收购旨在增强英飞凌在