2N7002W价格

参考价格:¥0.1040

型号:2N7002W 品牌:Fairchild 备注:这里有2N7002W多少钱,2024年最近7天走势,今日出价,今日竞价,2N7002W批发/采购报价,2N7002W行情走势销售排行榜,2N7002W报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2N7002W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. •MotorControl •PowerManagementFunctions FeaturesandBenefits •Low-OnRe

DIODESDiodes Incorporated

达尔科技

DIODES
2N7002W

N-ChannelMOSFET

Features: *LowOn-Resistance:7.5Ω *LowInputCapacitance:22PF *LowOutputCapacitance:11PF *LowThresholdVoltage:1.5V(TYE) *FastSwitchingSpeed:7ns

WEITRONWEITRON

威堂電子科技

WEITRON
2N7002W

N-ChannelEnhancementModeFieldEffectTransistor

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
2N7002W

60VN-ChannelEnhancementModeMOSFET

FEATURES •RDS(ON),VGS@10V,IDS@500mA=5Ω •RDS(ON),VGS@4.5V,IDS@75mA=7.5Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:Relays,Displays,Lamps,Solen

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
2N7002W

N-ChannelEnhancementModeFieldEffectTransistor

Features •LowON-Resistance •LowInputCapacitance •LowGateThresholdVoltage •FastSwitchingSpeed •LowInput/OutputLeakage •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2N7002W

SmallSignalMOSFET60V,340mA,Single,N?묬hannel,SC??0

Features •ESDProtected •LowRDS(on) •SmallFootprintSurfaceMountPackage •2VPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N7002W

SmallSignalMOSFET

115mAMPS,60VOLTS,RDS(on)=7.5SmallSignalMOSFET N–ChannelSOT–323

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2N7002W

300mAmps,60VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC2N7002WusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. ■FEATURES *HighDensityCellDesignforLowRDS(ON). *VoltageControl

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N7002W

Plastic-EncapsulatedTransistors

MOSFET(N-Channel) FEATURES Powerdissipation PD:0.2W(Tamb=25℃) Collectorcurrent ID:115mA Collector-basevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL
2N7002W

Plastic-EncapsulateMosfets

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage MechanicalData •Case:SOT-323,MoldedPlastic •Terminals:SolderableperMIL-STD-202,Method208 •TerminalConnectio

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH
2N7002W

N-ChannelMOSFET

■Features ●VDS(V)=60V ●ID=0.34A(VGS=10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2N7002W

N-ChannelEnhancementModeFieldEffectTransistor

ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YANGJIE
2N7002W

MOSFET(N-Channel)

SOT-323Plastic-EncapsulateMOSFETS MOSFET(N-Channel) V(BR)DSSRDS(on)MAXID 60V5Ω@10V115mA 7Ω@5V

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
2N7002W

N-ChannelMOSFET

Features ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
2N7002W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage MechanicalData Case:SOT-323,MoldedPlastic Terminals:SolderableperMIL-STD-202,Method208 Terminal

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY
2N7002W

SMDMOSFET

Features •RDS(ON),VGS@10V,IDS@500mA=5Ω •RDS(ON),VGS@4.5V,IDS@75mA=7.5Ω •Advancedtrenchprocesstechnology. •Highdensitycelldesignforultralowon-resistance. •Speciallydesignedforbatteryoperatedsystem, solid-staterelaysdrivers,relays,displays,lamps, solenoids

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

FORMOSA
2N7002W

N-ChannelEnhancementModeMOSFET

Features Lowon-resistance ESDprotectedgateupto2kVHBM High-speedswitching Drivecircuitscanbesimple Paralleluseiseasy

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟電子台舟電子股份有限公司

TECHPUBLIC
2N7002W

ESDProtected:1000V

文件:1.33161 Mbytes Page:6 Pages

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH
2N7002W

SmallSignalMOSFET

文件:71.21 Kbytes Page:5 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N7002W

N-ChannelEnhancementModeFieldEffectTransistor

文件:196.14 Kbytes Page:4 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2N7002W

N-ChannelEnhancementModeFieldEffectTransistor

文件:297.05 Kbytes Page:6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
2N7002W

N-ChannelEnhancementModeFieldEffectTransistor

文件:216.64 Kbytes Page:4 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2N7002W

300mA,60VN-CHANNELPOWERMOSFET

文件:158.68 Kbytes Page:3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N7002W

N-ChannelEnhancementModeFieldEffectTransistor

文件:187.86 Kbytes Page:4 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2N7002W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件:127.17 Kbytes Page:3 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
2N7002W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件:81.87 Kbytes Page:3 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description •N-channelenhancementmodefieldeffecttransistor,designedforhighspeedpulsedamplifieranddriverapplications,whichismanufactoredbytheN-ChannelDMOSprocess. Features •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitching. •Ruggeda

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

N-ChannelEnhancement-ModeVerticalDMOSFETs

GeneralDescription TheSupertex2N7002isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh

SUTEX

Supertex, Inc

SUTEX

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

FEATURES *60VoltVCEO

Zetex

Zetex Semiconductors

Zetex

N-Channel60-V(D-S)MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

VishayVishay Siliconix

威世科技

Vishay

N-ChannelEnhancementModeFieldEffectTransistor

Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •AvailableinLeadFree/RoHSCompliantVersion(Note2)

DIODESDiodes Incorporated

达尔科技

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •AvailableinLeadFree/RoHSCompliantVersion(Note2)

DIODESDiodes Incorporated

达尔科技

DIODES

N-CHANNELENHANCEMENTMODEMOSFET

Features N-ChannelMOSFET LowOn-Resistance LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtectedGate1KV Lead-FreeFinish;RoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101Standardsfor

DIODESDiodes Incorporated

达尔科技

DIODES

N-CHANNELENHANCEMENTMODEMOSFET

Features N-ChannelMOSFET LowOn-Resistance LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtectedGate1KV Lead-FreeFinish;RoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101Standardsfor

DIODESDiodes Incorporated

达尔科技

DIODES

N-CHANNELENHANCEMENTMODEMOSFET

Features N-ChannelMOSFET LowOn-Resistance LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtectedGate1KV Lead-FreeFinish;RoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101Standardsfor

DIODESDiodes Incorporated

达尔科技

DIODES

MOSFET

2N7002W-G(N-Channel) RoHSDevice Features -HighdensitycelldesignforlowRDS(ON). -Voltagecontrolsmallsignalswitch. -Ruggedandreliable. -Highsaturationcurrentcapability.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

COMCHIP

300mAmps,60VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC2N7002WusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. ■FEATURES *HighDensityCellDesignforLowRDS(ON). *VoltageControl

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

300mAmps,60VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC2N7002WusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. ■FEATURES *HighDensityCellDesignforLowRDS(ON). *VoltageControl

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

SmallSignalMOSFET115mA,60V

N–ChannelSOT–323 •Wedeclarethatthematerialofproduct compliancewithRoHSrequirements. •ESDProtected:1000V •Pb-Freepackageisavailable RoHSproductforpackingcodesuffixG HalogenfreeproductforpackingcodesuffixH

WILLASWILLAS electronics corp

威倫威倫电子股份有限公司

WILLAS

SmallSignalMOSFET60V,340mA,Single,N?묬hannel,SC??0

Features •ESDProtected •LowRDS(on) •SmallFootprintSurfaceMountPackage •2VPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N-ChannelEnhancementModeMOSFET

Features Lowon-resistance ESDprotectedgateupto2kVHBM High-speedswitching Drivecircuitscanbesimple Paralleluseiseasy

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟電子台舟電子股份有限公司

TECHPUBLIC

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件:105.95 Kbytes Page:4 Pages

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

60VN-ChannelEnhancementModeMOSFET

文件:168.32 Kbytes Page:5 Pages

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件:127.17 Kbytes Page:3 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件:81.87 Kbytes Page:3 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

N-ChannelEnhancementModeFieldEffectTransistor

文件:297.05 Kbytes Page:6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

N-ChannelEnhancementModeFieldEffectTransistor

文件:187.86 Kbytes Page:4 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

300mA,60VN-CHANNELPOWERMOSFET

文件:158.68 Kbytes Page:3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

SmallSignalMOSFET60V,340mA,Single,N.Channel,SC.70

文件:108.83 Kbytes Page:5 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N-ChannelEnhancementModeFieldEffectTransistor

文件:216.64 Kbytes Page:4 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

60VN-ChannelEnhancementModeMOSFET

文件:159.73 Kbytes Page:6 Pages

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

SmallSignalMOSFET

文件:71.21 Kbytes Page:5 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N-CHANNELMOSFETFORHIGHSPEEDSWITCHING

文件:179.74 Kbytes Page:3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件:197.33 Kbytes Page:4 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

N-ChannelEnhancementModeFieldEffectTransistor

文件:196.14 Kbytes Page:4 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

N-Channel60-V(D-S)MOSFET

文件:1.01261 Mbytes Page:8 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件:127.17 Kbytes Page:3 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件:81.87 Kbytes Page:3 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

N-CHANNELMOSFETFORHIGHSPEEDSWITCHING

文件:179.74 Kbytes Page:3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

2N7002W产品属性

  • 类型

    描述

  • 型号

    2N7002W

  • 功能描述

    MOSFET N-Chan Enhancement Mode Field Effect

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-4-25 8:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES
23+
SOT-323
999999
原装正品现货量大可订货
ON/安森美
21+
SOT323
3014
DIODES(美台)
22+
NA
9800
全新原装,价格优势
DIODES
2020+
SOT23-3
7398
百分百原装正品 真实公司现货库存 本公司只做原装 可
DIODES
23+
QFN
6000
只做原装进口现货
ON/安森美
21+
NA
44994
只做原装 现货仓02
DIODES/美台
21+
SOT323
1650000
原装现货,假一罚十
UTC/友顺
22+
SOT-323
50000
有挂就有货,只做原装免费送样-可BOM配单
ON/安森美
22+
SOT323
54157
郑重承诺只做原装进口货
DIODES/美台
03+
NA
880000
明嘉莱只做原装正品现货

2N7002W芯片相关品牌

  • ABRACON
  • AD
  • HAMMOND
  • ICST
  • MOLEX7
  • Motorola
  • NIC
  • Sipex
  • STMICROELECTRONICS
  • SUNMATE
  • Temic
  • TRACOPOWER

2N7002W数据表相关新闻