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2N7002W价格

参考价格：￥0.1040

型号：2N7002W 品牌：Fairchild 备注：这里有2N7002W多少钱，2025年最近7天走势，今日出价，今日竞价，2N7002W批发/采购报价，2N7002W行情走势销售排行榜，2N7002W报价。

型号	功能描述	生产厂家&企业	LOGO
2N7002W	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • Low-On Re	DIODES 美台半导体	DIODES
2N7002W	N-Channel MOSFET Features: * Low On-Resistance : 7.5Ω * Low Input Capacitance: 22PF * Low Output Capacitance : 11PF * Low Threshold Voltage :1 .5V(TYE) * Fast Switching Speed : 7ns	WEITRON	WEITRON
2N7002W	N-Channel Enhancement Mode Field Effect Transistor Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
2N7002W	60V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solen	PANJIT 強茂	PANJIT
2N7002W	N-Channel Enhancement Mode Field Effect Transistor Features • Low ON-Resistance • Low Input Capacitance • Low Gate Threshold Voltage • Fast Switching Speed • Low Input/Output Leakage • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1	MCC 美微科	MCC
2N7002W	Small Signal MOSFET 60 V, 340 mA, Single, N?묬hannel, SC??0 Features • ESD Protected • Low RDS(on) • Small Footprint Surface Mount Package • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS	ONSEMI 安森美半导体	ONSEMI
2N7002W	Small Signal MOSFET 115 mAMPS, 60VOLTS, RDS(on)=7.5 Small Signal MOSFET N–Channel SOT–323	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
2N7002W	300m Amps, 60 Volts N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 2N7002W uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ■ FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Control	UTC 友顺	UTC
2N7002W	Plastic-Encapsulated Transistors MOSFET ( N-Channel ) FEATURES Power dissipation PD : 0.2 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	TEL 东电电子	TEL
2N7002W	Plastic-Encapsulate Mosfets Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package Mechanical Data • Case: SOT-323, Molded Plastic • Terminals: Solderable per MIL-STD-202, Method 208 • Terminal Connectio	HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司	HOTTECH
2N7002W	N-Channel MOSFET ■ Features ● VDS (V) = 60V ● ID = 0.34 A (VGS = 10V) ● RDS(ON)	KEXIN 科信电子	KEXIN
2N7002W	N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)	YANGJIE 扬州扬杰电子	YANGJIE
2N7002W	MOSFET (N-Channel) SOT-323 Plastic-Encapsulate MOSFETS MOSFET (N-Channel) V(BR)DSS RDS(on)MAX ID 60V 5Ω@10V 115mA 7Ω@5V	JIANGSU 长电科技	JIANGSU
2N7002W	N-Channel MOSFET Features ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability	YFWDIODE 佑风微电子	YFWDIODE
2N7002W	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Mechanical Data Case: SOT-323, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2N7002W	SMD MOSFET Features • RDS(ON), VGS@10V, IDS@500mA=5 Ω • RDS(ON), VGS@4.5V, IDS@75mA=7.5 Ω • Advanced trench process technology. • High density cell design for ultra low on-resistance. • Specially designed for battery operated system, solid-state relays drivers, relays, displays, lamps, solenoids	FORMOSA 美丽微半导体	FORMOSA
2N7002W	N-Channel Enhancement Mode MOSFET Features Low on-resistance ESD protected gate up to 2kV HBM High-speed switching Drive circuits can be simple Parallel use is easy	TECHPUBLIC 台舟电子	TECHPUBLIC
2N7002W	N-Channel Enhancement Mode Field Effect Transistor 文件：196.14 Kbytes Page：4 Pages	MCC 美微科	MCC
2N7002W	Small Signal MOSFET 文件：71.21 Kbytes Page：5 Pages	ONSEMI 安森美半导体	ONSEMI
2N7002W	ESD Protected:1000V 文件：1.33161 Mbytes Page：6 Pages	LEIDITECH 雷卯电子	LEIDITECH
2N7002W	N-Channel Enhancement Mode Field Effect Transistor 文件：216.64 Kbytes Page：4 Pages	MCC 美微科	MCC
2N7002W	300mA, 60V N-CHANNEL POWER MOSFET 文件：158.68 Kbytes Page：3 Pages	UTC 友顺	UTC
2N7002W	N-Channel Enhancement Mode Field Effect Transistor 文件：297.05 Kbytes Page：6 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
2N7002W	N-Channel Enhancement Mode Field Effect Transistor 文件：187.86 Kbytes Page：4 Pages	MCC 美微科	MCC
2N7002W	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：127.17 Kbytes Page：3 Pages	DIODES 美台半导体	DIODES
2N7002W	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：81.87 Kbytes Page：3 Pages	DIODES 美台半导体	DIODES
2N7002	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a	PANJIT 強茂	PANJIT
2N7002	N-Channel Enhancement-Mode Vertical DMOS FETs General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h	SUTEX	SUTEX
2N7002	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES * 60 Volt VCEO	Zetex	Zetex
2N7002	N-Channel 60-V (D-S) MOSFET FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
2N7002	N-Channel Enhancement Mode Field Effect Transistor Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
2N7002W-7	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Available in Lead Free/RoHS Compliant Version (Note 2)	DIODES 美台半导体	DIODES
2N7002W-7-F	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Available in Lead Free/RoHS Compliant Version (Note 2)	DIODES 美台半导体	DIODES
2N7002WAX	N-CHANNEL ENHANCEMENT MODE MOSFET Features  N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected Gate 1KV  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for	DIODES 美台半导体	DIODES
2N7002WAX-13	N-CHANNEL ENHANCEMENT MODE MOSFET Features  N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected Gate 1KV  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for	DIODES 美台半导体	DIODES
2N7002WAX-7	N-CHANNEL ENHANCEMENT MODE MOSFET Features  N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected Gate 1KV  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for	DIODES 美台半导体	DIODES
2N7002W-G	MOSFET 2N7002W-G (N-Channel) RoHS Device Features - High density cell design for low RDS(ON). - Voltage control small signal switch. - Rugged and reliable. - High saturation current capability.	COMCHIP 典琦	COMCHIP
2N7002WG-AL3-R	300m Amps, 60 Volts N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 2N7002W uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ■ FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Control	UTC 友顺	UTC
2N7002W-HF	MOSFET Features - High density cell design for low RDS(ON). - Voltage controlled small signal switch. - Rugged and reliable. - High saturation current capability.	COMCHIP 典琦	COMCHIP
2N7002WL-AL3-R	300m Amps, 60 Volts N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 2N7002W uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ■ FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Control	UTC 友顺	UTC
2N7002WT1	Small Signal MOSFET 115 mA, 60 V N–Channel SOT–323 • We declare that the material of product compliance with RoHS requirements. • ESD Protected:1000V • Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H	WILLASWILLAS ELECTRONIC CORP 威伦威伦电子股份有限公司	WILLAS
2N7002WT1G	Small Signal MOSFET 60 V, 340 mA, Single, N?묬hannel, SC??0 Features • ESD Protected • Low RDS(on) • Small Footprint Surface Mount Package • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS	ONSEMI 安森美半导体	ONSEMI
2N7002WT1G	N-Channel Enhancement Mode MOSFET Features Low on-resistance ESD protected gate up to 2kV HBM High-speed switching Drive circuits can be simple Parallel use is easy	TECHPUBLIC 台舟电子	TECHPUBLIC
2N7002W_05	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：105.95 Kbytes Page：4 Pages	PANJIT 強茂	PANJIT
2N7002W_07	60V N-Channel Enhancement Mode MOSFET 文件：168.32 Kbytes Page：5 Pages	PANJIT 強茂	PANJIT
2N7002W_08	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：127.17 Kbytes Page：3 Pages	DIODES 美台半导体	DIODES
2N7002W_1	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：81.87 Kbytes Page：3 Pages	DIODES 美台半导体	DIODES
2N7002W_10	N-Channel Enhancement Mode Field Effect Transistor 文件：297.05 Kbytes Page：6 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
2N7002W_11	N-Channel Enhancement Mode Field Effect Transistor 文件：187.86 Kbytes Page：4 Pages	MCC 美微科	MCC
2N7002W_12	300mA, 60V N-CHANNEL POWER MOSFET 文件：158.68 Kbytes Page：3 Pages	UTC 友顺	UTC
2N7002W_12	Small Signal MOSFET 60 V, 340 mA, Single, N.Channel, SC.70 文件：108.83 Kbytes Page：5 Pages	ONSEMI 安森美半导体	ONSEMI
2N7002W_13	N-Channel Enhancement Mode Field Effect Transistor 文件：216.64 Kbytes Page：4 Pages	MCC 美微科	MCC
2N7002W_14	60V N-Channel Enhancement Mode MOSFET 文件：159.73 Kbytes Page：6 Pages	PANJIT 強茂	PANJIT
2N7002W_15	Small Signal MOSFET 文件：71.21 Kbytes Page：5 Pages	ONSEMI 安森美半导体	ONSEMI
2N7002W_15	N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING 文件：179.74 Kbytes Page：3 Pages	UTC 友顺	UTC
2N7002W_15	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：197.33 Kbytes Page：4 Pages	DIODES 美台半导体	DIODES
2N7002W_16	N-Channel Enhancement Mode Field Effect Transistor 文件：196.14 Kbytes Page：4 Pages	MCC 美微科	MCC
2N7002W-7-F	N-Channel 60-V (D-S) MOSFET 文件：1.01261 Mbytes Page：8 Pages	VBSEMI 微碧半导体	VBSEMI
2N7002W-7-F	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：127.17 Kbytes Page：3 Pages	DIODES 美台半导体	DIODES
2N7002W-7-F	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：81.87 Kbytes Page：3 Pages	DIODES 美台半导体	DIODES

2N7002W产品属性

类型
描述
型号
2N7002W
功能描述
MOSFET N-Chan Enhancement Mode Field Effect
RoHS
否
制造商
STMicroelectronics
晶体管极性
N-Channel
汲极/源极击穿电压
650 V
闸/源击穿电压
25 V
漏极连续电流
130 A 电阻汲极/源极
RDS（导通）
0.014 Ohms
配置
Single
安装风格
Through Hole
封装/箱体
Max247
封装
Tube

2N7002W供应商更多...

更新时间：2025-8-6 23:00:00

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深圳市纳立科技有限公司	2N7002W		三年内		1983	只做原装正品	询价
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深圳市威雅利发展有限公司	2N7002W	ON	18+	SC70	1975	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市凌旭科技有限公司	2N7002W	CJ	21+	SOT-323	2930	只做原装,一定有货,不止网上数量,量多可订货!	询价
深圳市冠亿通科技有限公司	2N7002W	ON/安森美	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
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2N7002W价格

2N7002W产品属性

2N7002W供应商更多...

2N7002W芯片相关品牌

2N7002W规格书下载地址

2N7002W参数引脚图相关

2N7002W数据表相关新闻

2N7002VC-7

2N7002WL-SOT323R-TG

2N7002ZDWG-SOT363L-TEG

2N7002NXAKR

2N7002LT1G原装正品正规税票假一罚万

2N7002公司原装现货

DdatasheetPDF页码索引