位置:首页 > IC中文资料第459页 > 2N7002W
2N7002W价格
参考价格:¥0.1040
型号:2N7002W 品牌:Fairchild 备注:这里有2N7002W多少钱,2025年最近7天走势,今日出价,今日竞价,2N7002W批发/采购报价,2N7002W行情走势销售排行榜,2N7002W报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
2N7002W | N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. •MotorControl •PowerManagementFunctions FeaturesandBenefits •Low-OnRe | DIODES Diodes Incorporated | ||
2N7002W | N-ChannelMOSFET Features: *LowOn-Resistance:7.5Ω *LowInputCapacitance:22PF *LowOutputCapacitance:11PF *LowThresholdVoltage:1.5V(TYE) *FastSwitchingSpeed:7ns | WEITRON Weitron Technology | ||
2N7002W | N-ChannelEnhancementModeFieldEffectTransistor Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
2N7002W | 60VN-ChannelEnhancementModeMOSFET FEATURES •RDS(ON),VGS@10V,IDS@500mA=5Ω •RDS(ON),VGS@4.5V,IDS@75mA=7.5Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:Relays,Displays,Lamps,Solen | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | ||
2N7002W | N-ChannelEnhancementModeFieldEffectTransistor Features •LowON-Resistance •LowInputCapacitance •LowGateThresholdVoltage •FastSwitchingSpeed •LowInput/OutputLeakage •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | ||
2N7002W | SmallSignalMOSFET60V,340mA,Single,N?묬hannel,SC??0 Features •ESDProtected •LowRDS(on) •SmallFootprintSurfaceMountPackage •2VPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
2N7002W | SmallSignalMOSFET 115mAMPS,60VOLTS,RDS(on)=7.5SmallSignalMOSFET N–ChannelSOT–323 | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | ||
2N7002W | 300mAmps,60VoltsN-CHANNELPOWERMOSFET ■DESCRIPTION TheUTC2N7002WusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. ■FEATURES *HighDensityCellDesignforLowRDS(ON). *VoltageControl | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | ||
2N7002W | Plastic-EncapsulatedTransistors MOSFET(N-Channel) FEATURES Powerdissipation PD:0.2W(Tamb=25℃) Collectorcurrent ID:115mA Collector-basevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | ||
2N7002W | Plastic-EncapsulateMosfets Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage MechanicalData •Case:SOT-323,MoldedPlastic •Terminals:SolderableperMIL-STD-202,Method208 •TerminalConnectio | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 | ||
2N7002W | N-ChannelMOSFET ■Features ●VDS(V)=60V ●ID=0.34A(VGS=10V) ●RDS(ON) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | ||
2N7002W | N-ChannelEnhancementModeFieldEffectTransistor ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V) | YANGJIEYangzhou yangjie electronic co., ltd 扬州扬杰电子扬州扬杰电子科技股份有限公司 | ||
2N7002W | MOSFET(N-Channel) SOT-323Plastic-EncapsulateMOSFETS MOSFET(N-Channel) V(BR)DSSRDS(on)MAXID 60V5Ω@10V115mA 7Ω@5V | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | ||
2N7002W | N-ChannelMOSFET Features ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | ||
2N7002W | N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage MechanicalData Case:SOT-323,MoldedPlastic Terminals:SolderableperMIL-STD-202,Method208 Terminal | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | ||
2N7002W | SMDMOSFET Features •RDS(ON),VGS@10V,IDS@500mA=5Ω •RDS(ON),VGS@4.5V,IDS@75mA=7.5Ω •Advancedtrenchprocesstechnology. •Highdensitycelldesignforultralowon-resistance. •Speciallydesignedforbatteryoperatedsystem, solid-staterelaysdrivers,relays,displays,lamps, solenoids | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 | ||
2N7002W | N-ChannelEnhancementModeMOSFET Features Lowon-resistance ESDprotectedgateupto2kVHBM High-speedswitching Drivecircuitscanbesimple Paralleluseiseasy | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 | ||
2N7002W | N-ChannelEnhancementModeFieldEffectTransistor 文件:196.14 Kbytes Page:4 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | ||
2N7002W | SmallSignalMOSFET 文件:71.21 Kbytes Page:5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
2N7002W | ESDProtected:1000V 文件:1.33161 Mbytes Page:6 Pages | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | ||
2N7002W | N-ChannelEnhancementModeFieldEffectTransistor 文件:297.05 Kbytes Page:6 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
2N7002W | N-ChannelEnhancementModeFieldEffectTransistor 文件:216.64 Kbytes Page:4 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | ||
2N7002W | 300mA,60VN-CHANNELPOWERMOSFET 文件:158.68 Kbytes Page:3 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | ||
2N7002W | N-ChannelEnhancementModeFieldEffectTransistor 文件:187.86 Kbytes Page:4 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | ||
2N7002W | N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件:127.17 Kbytes Page:3 Pages | DIODES Diodes Incorporated | ||
2N7002W | N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件:81.87 Kbytes Page:3 Pages | DIODES Diodes Incorporated | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description •N-channelenhancementmodefieldeffecttransistor,designedforhighspeedpulsedamplifieranddriverapplications,whichismanufactoredbytheN-ChannelDMOSprocess. Features •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitching. •Ruggeda | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | |||
N-ChannelEnhancement-ModeVerticalDMOSFETs GeneralDescription TheSupertex2N7002isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh | SUTEX Supertex, Inc | |||
N-CHANNELENHANCEMENTMODEVERTICALDMOSFET FEATURES *60VoltVCEO | Zetex Zetex Semiconductors | |||
N-Channel60-V(D-S)MOSFET FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI | VishayVishay Siliconix 威世科技威世科技半导体 | |||
N-ChannelEnhancementModeFieldEffectTransistor Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •AvailableinLeadFree/RoHSCompliantVersion(Note2) | DIODES Diodes Incorporated | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •AvailableinLeadFree/RoHSCompliantVersion(Note2) | DIODES Diodes Incorporated | |||
N-CHANNELENHANCEMENTMODEMOSFET Features N-ChannelMOSFET LowOn-Resistance LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtectedGate1KV Lead-FreeFinish;RoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101Standardsfor | DIODES Diodes Incorporated | |||
N-CHANNELENHANCEMENTMODEMOSFET Features N-ChannelMOSFET LowOn-Resistance LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtectedGate1KV Lead-FreeFinish;RoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101Standardsfor | DIODES Diodes Incorporated | |||
N-CHANNELENHANCEMENTMODEMOSFET Features N-ChannelMOSFET LowOn-Resistance LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtectedGate1KV Lead-FreeFinish;RoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101Standardsfor | DIODES Diodes Incorporated | |||
MOSFET 2N7002W-G(N-Channel) RoHSDevice Features -HighdensitycelldesignforlowRDS(ON). -Voltagecontrolsmallsignalswitch. -Ruggedandreliable. -Highsaturationcurrentcapability. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | |||
300mAmps,60VoltsN-CHANNELPOWERMOSFET ■DESCRIPTION TheUTC2N7002WusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. ■FEATURES *HighDensityCellDesignforLowRDS(ON). *VoltageControl | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
300mAmps,60VoltsN-CHANNELPOWERMOSFET ■DESCRIPTION TheUTC2N7002WusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. ■FEATURES *HighDensityCellDesignforLowRDS(ON). *VoltageControl | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
SmallSignalMOSFET115mA,60V N–ChannelSOT–323 •Wedeclarethatthematerialofproduct compliancewithRoHSrequirements. •ESDProtected:1000V •Pb-Freepackageisavailable RoHSproductforpackingcodesuffixG HalogenfreeproductforpackingcodesuffixH | WILLASWILLAS ELECTRONIC CORP 威伦威伦电子股份有限公司 | |||
SmallSignalMOSFET60V,340mA,Single,N?묬hannel,SC??0 Features •ESDProtected •LowRDS(on) •SmallFootprintSurfaceMountPackage •2VPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
N-ChannelEnhancementModeMOSFET Features Lowon-resistance ESDprotectedgateupto2kVHBM High-speedswitching Drivecircuitscanbesimple Paralleluseiseasy | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件:105.95 Kbytes Page:4 Pages | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | |||
60VN-ChannelEnhancementModeMOSFET 文件:168.32 Kbytes Page:5 Pages | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件:127.17 Kbytes Page:3 Pages | DIODES Diodes Incorporated | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件:81.87 Kbytes Page:3 Pages | DIODES Diodes Incorporated | |||
N-ChannelEnhancementModeFieldEffectTransistor 文件:297.05 Kbytes Page:6 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-ChannelEnhancementModeFieldEffectTransistor 文件:187.86 Kbytes Page:4 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
300mA,60VN-CHANNELPOWERMOSFET 文件:158.68 Kbytes Page:3 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
SmallSignalMOSFET60V,340mA,Single,N.Channel,SC.70 文件:108.83 Kbytes Page:5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
N-ChannelEnhancementModeFieldEffectTransistor 文件:216.64 Kbytes Page:4 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
60VN-ChannelEnhancementModeMOSFET 文件:159.73 Kbytes Page:6 Pages | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | |||
SmallSignalMOSFET 文件:71.21 Kbytes Page:5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
N-CHANNELMOSFETFORHIGHSPEEDSWITCHING 文件:179.74 Kbytes Page:3 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件:197.33 Kbytes Page:4 Pages | DIODES Diodes Incorporated | |||
N-ChannelEnhancementModeFieldEffectTransistor 文件:196.14 Kbytes Page:4 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
N-Channel60-V(D-S)MOSFET 文件:1.01261 Mbytes Page:8 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件:127.17 Kbytes Page:3 Pages | DIODES Diodes Incorporated | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件:81.87 Kbytes Page:3 Pages | DIODES Diodes Incorporated | |||
N-CHANNELMOSFETFORHIGHSPEEDSWITCHING 文件:179.74 Kbytes Page:3 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |
2N7002W产品属性
- 类型
描述
- 型号
2N7002W
- 功能描述
MOSFET N-Chan Enhancement Mode Field Effect
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
标准封装 |
37048 |
全新原装正品/价格优惠/质量保障 |
|||
MCC/美微科 |
24+ |
SOT323 |
45000 |
热卖优势现货 |
|||
ON(安森美) |
23+ |
SOT-323(SC-70) |
10167 |
公司只做原装正品,假一赔十 |
|||
DIODES |
22+ |
SOT-323 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
ON |
18+ |
SC70 |
1975 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FSC |
22+ |
SOT23-3 |
12245 |
现货,原厂原装假一罚十! |
|||
ON |
1923 |
SC-70 |
90000 |
全新原装公司现货
|
|||
扬杰科技 |
21+ |
SOT-323 |
3230 |
全新原装鄙视假货 |
|||
ON/安森美 |
18+ |
NA |
134915 |
||||
长电 |
19+ |
SOT-323 |
200000 |
2N7002W规格书下载地址
2N7002W参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2NC2H-CK
- 2NC2H0222
- 2NC2F0222
- 2NC2F0122
- 2NC1Q0B22
- 2NC1Q0222
- 2N918
- 2N834
- 2N7638-GA
- 2N7637-GA
- 2N7334JANTX
- 2N720A
- 2N718A
- 2N7081
- 2N708
- 2N706C
- 2N706A
- 2N706
- 2N705A
- 2N7058
- 2N7055
- 2N7054
- 2N7053
- 2N7052
- 2N7051
- 2N705
- 2N703
- 2N7013
- 2N7012
- 2N7008-G
- 2N7008
- 2N7007
- 2N7002Z
- 2N7002X
- 2N7002W-TP
- 2N7002WT1G
- 2N7002W-7-F
- 2N7002VC-7
- 2N7002VAC-7
- 2N7002VA-7-F
- 2N7002VA-7
- 2N7002VA
- 2N7002V/BKN
- 2N7002V
- 2N7002TR
- 2N7002-TP
- 2N7002TA
- 2N7002T-7-F/BKN
- 2N7002T-7-F
- 2N7002-T1-GE3
- 2N7002-T1-E3-CUTTAPE
- 2N7002-T1-E3
- 2N7002-T1
- 2N7002T/BKN
- 2N7002T
- 2N7002S
- 2N7002R-02-7
- 2N7002P
- 2N7002M
- 2N7002L
- 2N7002K
- 2N7002H
- 2N7002F
- 2N7002E
- 2N7002D
- 2N7002B
- 2N7002A
- 2N7002_
- 2N7002
- 2N7001T
- 2N7000Z
- 2N7000P
- 2N7000K
- 2N7000G
2N7002W数据表相关新闻
2N7002VC-7
2N7002VC-7
2023-8-212N7002WL-SOT323R-TG
2N7002WL-SOT323R-TG
2023-2-12N7002ZDWG-SOT363L-TEG
2N7002ZDWG-SOT363L-TEG
2023-1-92N7002NXAKR
2N7002NXAKR
2022-11-102N7002LT1G原装正品正规税票假一罚万
焕盛达竭诚为您提供一站式配套服务。当天下单,当天发货;
2020-9-152N7002公司原装现货
瀚佳科技(深圳)有限公司专业进口电子元器件代理商
2019-11-8
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97