Plastic-Encapsulated Transistors

FEATURES Power dissipation PD: 0.15 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃

N-Channel Enhancement Mode Field Effect Transistor

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant

Small Signal MOSFET

FEATURES ● High density cell design for low RDS(ON). ● Voltage controlled small signal switch. ● Rugged and reliable. ● High saturation current capability.

N-Channel ENHANCEMENT MODE POWER MOSFET

FEATURES: * Fast Switching Speed * Low On-Resistance * Low Voltage Driver APPLICATIONS: * Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories * Battery Operated Systems * Power Supply Converter Circuits * Load/Power Switching Cell Phones, Pagers

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This new generation MOSFET has been designed to minimize the on state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • DC-DC Converters • Power management functions • Battery

300 mAmps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 2N7002T has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage,

N-Channel Plastic-Encapsulate Transistor

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Low ON-Resistance and low Input Capacitance • Low Gate Threshold Voltage • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Available in Lead

Small Signal MOSFET Transistor

FEATURES ● Low on-resistance. ● Low gate threshold voltge. ● Low input capacitance. ● Fast switching speed. ● Low input/output leakage. APPLICATIONS ● N-channel enhancement mode effect transistor. ● Switching application.

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability • Green Device (Notes 3 and 4)

MOSFET (N-Channel)

MOSFET (N-Channel) FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

N-Channel MOSFET

■ Features ● VDS (V) = 60V ● ID = 115mA ● RDS(ON)

SOT-523 Plastic-Encaps u late MOSFET

N-Channel MOSFET Features ● Highdensity cell design for Low RDS(on) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability ● ESD protected Applications ● DC/DC Converter ● Load Switch for Portable Devices ● Battery Switch

N-Channel MOSFET

■ Features ● VDS (V) = 60V ● ID = 115mA ● RDS(ON)

SOT-523 Plastic-Encapsulate MOSFETS

MOSFET (N-Channel) FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability ● Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffi

MOSFET ( N-Channel )

FEATURES Power dissipation PD: 0.15 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃

N-Channel Plastic- Encapsulate MOSFETS

FEATURES ● High Density Cell Design for Low RDS(ON) ● Voltage Controlled Small Signal Switch ● Rugged and Reliable ● High Saturation Current Capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

SOT-523 Plastic-Encapsulate MOSFETS

MOSFET (N-Channel) FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

Voltage controlled small signal switch

Features ■ High density cell design for low RDS (ON) ■ Voltage controlled small signal switch ■ Rugged and reliable ■ High saturation current capability Applications ■ Load Switch for Portable Devices ■ DC/DC Converter

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low

SOT-523 Plastic-Encapsulate MOSFETS

FEATURE o High density cell design for low Rpson) e oltage controlled small signal switch e Rugged and reliable e High saturation current capability APPLICATION ® Load Switch for Portable Devices e DC/DC Converter

N-Channel Enhancement Mode Field Effect Transistor

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant

300mA, 60V N-CHANNEL POWER MOSFET

文件：162.91 Kbytes Page：3 Pages

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：447.74 Kbytes Page：4 Pages

N-Channel Enhancement MOSFET

文件：337.37 Kbytes Page：3 Pages

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability • Green Device (Notes 3 and 4)

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability • Green Device (Notes 3 and 4)

60V N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • RDS(ON), VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@50mA=7.5Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories,

N-Channel Plastic- Encapsulate MOSFETS

FEATURES ● High Density Cell Design for Low RDS(ON) ● Voltage Controlled Small Signal Switch ● Rugged and Reliable ● High Saturation Current Capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

N-Channel MOSFET

■ Features ● VDS (V) = 60V ● ID = 0.29 A ● RDS(ON)

300 mAmps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 2N7002T has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage,

MOSFET

Features - High density cell design for low R DS(ON) - Voltage controlled small signal switch - Rugged and reliable - High saturation current capability

300 mAmps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 2N7002T has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage,

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 0.250 Ampere FEATURE * Small surface mounting type. (SC-75/SOT-416) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. APPLICATION

N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002TQ is suitable fo

N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002TQ is suitable fo

N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002TQ is suitable fo

N-Channel 60V (D-S) MOSFET

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N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：447.74 Kbytes Page：4 Pages

N-Channel Enhancement MOSFET

文件：337.37 Kbytes Page：3 Pages

0.115A , 60V , RDS(ON) 7.2廓 N-Channel Enhancement MOSFET

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300mA, 60V N-CHANNEL POWER MOSFET

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N-Channel Plastic-Encapsulate Transistor

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N-CHANNEL ENHANCEMENT MODE MOSFET

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N-CHANNEL ENHANCEMENT MODE MOSFET

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N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING

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N-CHANNEL ENHANCEMENT MODE MOSFET

文件：112.82 Kbytes Page：5 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：288.82 Kbytes Page：3 Pages

包装：卷带（TR） 描述：MOSFET N-CH 60V SOT523 分立半导体产品 晶体管 - FET，MOSFET - 单个

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：112.82 Kbytes Page：5 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：288.82 Kbytes Page：3 Pages

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：447.74 Kbytes Page：4 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：112.82 Kbytes Page：5 Pages

包装：卷带（TR） 描述：MOSFET N-CH 60V SOT523 分立半导体产品 晶体管 - FET，MOSFET - 单个

300mA, 60V N-CHANNEL POWER MOSFET

文件：162.91 Kbytes Page：3 Pages

N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING

文件：178.85 Kbytes Page：3 Pages