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2N7002T价格
参考价格：￥0.3957
型号：2N7002T 品牌：Fairchild 备注：这里有2N7002T多少钱，2025年最近7天走势，今日出价，今日竞价，2N7002T批发/采购报价，2N7002T行情走势销售排行榜，2N7002T报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N7002T | Plastic-Encapsulated Transistors FEATURES Power dissipation PD: 0.15 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ | TEL 东电电子 |   | |
2N7002T | N-Channel Enhancement Mode Field Effect Transistor Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
2N7002T | Small Signal MOSFET FEATURES ● High density cell design for low RDS(ON). ● Voltage controlled small signal switch. ● Rugged and reliable. ● High saturation current capability. | SECOS 喜可士 | | |
2N7002T | N-Channel ENHANCEMENT MODE POWER MOSFET FEATURES: * Fast Switching Speed * Low On-Resistance * Low Voltage Driver APPLICATIONS: * Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories * Battery Operated Systems * Power Supply Converter Circuits * Load/Power Switching Cell Phones, Pagers | WEITRON | | |
2N7002T | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This new generation MOSFET has been designed to minimize the on state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • DC-DC Converters • Power management functions • Battery | DIODES 美台半导体 | | |
2N7002T | 300 mAmps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002T has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage, | UTC 友顺 | | |
2N7002T | N-Channel Plastic-Encapsulate Transistor Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Low ON-Resistance and low Input Capacitance • Low Gate Threshold Voltage • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Available in Lead | MCC | | |
2N7002T | Small Signal MOSFET Transistor FEATURES ● Low on-resistance. ● Low gate threshold voltge. ● Low input capacitance. ● Fast switching speed. ● Low input/output leakage. APPLICATIONS ● N-channel enhancement mode effect transistor. ● Switching application. | BILIN 银河微电 | | |
2N7002T | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability • Green Device (Notes 3 and 4) | DIODES 美台半导体 | | |
2N7002T | MOSFET (N-Channel) MOSFET (N-Channel) FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter | JIANGSU 长电科技 | | |
2N7002T | N-Channel MOSFET ■ Features ● VDS (V) = 60V ● ID = 115mA ● RDS(ON) | YFWDIODE 佑风微 | | |
2N7002T | SOT-523 Plastic-Encaps u late MOSFET N-Channel MOSFET Features ● Highdensity cell design for Low RDS(on) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability ● ESD protected Applications ● DC/DC Converter ● Load Switch for Portable Devices ● Battery Switch | HDSEMI 海德半导体 | | |
2N7002T | N-Channel MOSFET ■ Features ● VDS (V) = 60V ● ID = 115mA ● RDS(ON) | KEXIN 科信电子 | | |
2N7002T | SOT-523 Plastic-Encapsulate MOSFETS MOSFET (N-Channel) FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability ● Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffi | WILLASWILLAS ELECTRONIC CORP 威伦威伦电子股份有限公司 | | |
2N7002T | MOSFET ( N-Channel ) FEATURES Power dissipation PD: 0.15 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | | |
2N7002T | N-Channel Plastic- Encapsulate MOSFETS FEATURES ● High Density Cell Design for Low RDS(ON) ● Voltage Controlled Small Signal Switch ● Rugged and Reliable ● High Saturation Current Capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter | SECELECTRONICS 上优电子 | | |
2N7002T | SOT-523 Plastic-Encapsulate MOSFETS MOSFET (N-Channel) FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter | TGS | | |
2N7002T | Voltage controlled small signal switch Features ■ High density cell design for low RDS (ON) ■ Voltage controlled small signal switch ■ Rugged and reliable ■ High saturation current capability Applications ■ Load Switch for Portable Devices ■ DC/DC Converter | LEIDITECH 雷卯电子 | | |
2N7002T | N-Channel 60-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low | VBSEMI 微碧半导体 | | |
2N7002T | SOT-523 Plastic-Encapsulate MOSFETS FEATURE o High density cell design for low Rpson) e oltage controlled small signal switch e Rugged and reliable e High saturation current capability APPLICATION ® Load Switch for Portable Devices e DC/DC Converter | DGNJDZ 南晶电子 | | |
2N7002T | N-Channel Enhancement Mode Field Effect Transistor Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant | ONSEMI 安森美半导体 | | |
2N7002T | N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES 美台半导体 | | |
2N7002T | 300mA, 60V N-CHANNEL POWER MOSFET 文件：162.91 Kbytes Page：3 Pages | UTC 友顺 | | |
2N7002T | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：447.74 Kbytes Page：4 Pages | DIODES 美台半导体 | | |
2N7002T | N-Channel Enhancement MOSFET 文件：337.37 Kbytes Page：3 Pages | SECOS 喜可士 | | |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a | PANJIT 強茂 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h | SUTEX | | ||
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES * 60 Volt VCEO | Zetex | | ||
N-Channel 60-V (D-S) MOSFET FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI | VishayVishay Siliconix 威世科技 | | ||
N-Channel Enhancement Mode Field Effect Transistor Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability • Green Device (Notes 3 and 4) | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability • Green Device (Notes 3 and 4) | DIODES 美台半导体 | | ||
60V N-CHANNEL ENHANCEMENT MODE MOSFET FEATURES • RDS(ON), VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@50mA=7.5Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, | PANJIT 強茂 | | ||
N-Channel Plastic- Encapsulate MOSFETS FEATURES ● High Density Cell Design for Low RDS(ON) ● Voltage Controlled Small Signal Switch ● Rugged and Reliable ● High Saturation Current Capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter | SECELECTRONICS 上优电子 | | ||
N-Channel MOSFET ■ Features ● VDS (V) = 60V ● ID = 0.29 A ● RDS(ON) | KEXIN 科信电子 | | ||
300 mAmps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002T has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage, | UTC 友顺 | | ||
MOSFET Features - High density cell design for low R DS(ON) - Voltage controlled small signal switch - Rugged and reliable - High saturation current capability | COMCHIP 典琦 | | ||
300 mAmps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002T has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage, | UTC 友顺 | | ||
N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 0.250 Ampere FEATURE * Small surface mounting type. (SC-75/SOT-416) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. APPLICATION | CHENMKO 力勤 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002TQ is suitable fo | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002TQ is suitable fo | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002TQ is suitable fo | DIODES 美台半导体 | | ||
N-Channel 60V (D-S) MOSFET 文件：1.83389 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：447.74 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
N-Channel Enhancement MOSFET 文件：337.37 Kbytes Page：3 Pages | SECOS 喜可士 | | ||
0.115A , 60V , RDS(ON) 7.2廓 N-Channel Enhancement MOSFET 文件：288.82 Kbytes Page：3 Pages | SECOS 喜可士 | | ||
300mA, 60V N-CHANNEL POWER MOSFET 文件：162.91 Kbytes Page：3 Pages | UTC 友顺 | | ||
N-Channel Plastic-Encapsulate Transistor 文件：299.37 Kbytes Page：4 Pages | MCC | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：288.82 Kbytes Page：3 Pages | SECOS 喜可士 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：112.82 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING 文件：178.85 Kbytes Page：3 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：112.82 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：288.82 Kbytes Page：3 Pages | SECOS 喜可士 | | ||
包装：卷带（TR） 描述：MOSFET N-CH 60V SOT523 分立半导体产品 晶体管 - FET，MOSFET - 单个 | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：112.82 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：288.82 Kbytes Page：3 Pages | SECOS 喜可士 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：447.74 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：112.82 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
包装：卷带（TR） 描述：MOSFET N-CH 60V SOT523 分立半导体产品 晶体管 - FET，MOSFET - 单个 | DIODES 美台半导体 | | ||
300mA, 60V N-CHANNEL POWER MOSFET 文件：162.91 Kbytes Page：3 Pages | UTC 友顺 | |
2N7002T产品属性
- 类型
描述
- 型号
2N7002T
- 功能描述
MOSFET N-Chan Enhancement Mode Field Effect
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ZETEX |
2016+ |
SOT23 |
9775 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
PANJIT/强茂 |
23+ |
SOT-523 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
FAIRCHILD/仙童 |
25+ |
SOT-523 |
38967 |
FAIRCHILD/仙童全新特价2N7002T即刻询购立享优惠#长期有货 |
|||
PHI |
23+ |
NA |
8486 |
专做原装正品,假一罚百! |
|||
ON/安森美 |
21+ |
SOT-523F |
8080 |
只做原装,质量保证 |
|||
恩XP |
24+ |
SMD |
1760 |
全新原装数量均有多电话咨询 |
|||
Plingsemic |
17+ |
SOT-523 |
84000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
恩XP |
23+ |
SOT23-3 |
15000 |
全新原装现货,价格优势 |
|||
DIODES |
19+ |
SOT-523 |
840 |
只做原装正品 |
2N7002T芯片相关品牌
2N7002T规格书下载地址
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- 2N7002R-02-7
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- 2N7002P,215
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- 2N7002MTF
- 2N7002M
- 2N7002LT3G
- 2N7002LT1G/BKN
- 2N7002LT1G
- 2N7002LT1
- 2N7002L
- 2N7002KW
- 2N7002K-TP
- 2N7002K-T1-GE3
- 2N7002KT1G
- 2N7002K
- 2N7002H
- 2N7002F
- 2N7002E
- 2N7002D
- 2N7002B
- 2N7002A
- 2N7002_
- 2N7002
- 2N7001T
- 2N7000Z
- 2N7000P
- 2N7000K
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- 2N7000A
- 2N7000
2N7002T数据表相关新闻
2N7002VC-7
2N7002VC-7
2023-8-212N7002KWG-SOT323R-TG_UTC代理商
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2N7002NXAKR
2022-11-102N7002LT1G原装正品正规税票假一罚万
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2020-9-15
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