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位置：首页 > IC中文资料 > 2N7002E

2N7002E价格

参考价格：￥0.1521

型号：2N7002E 品牌：Panasonic 备注：这里有2N7002E多少钱，2026年最近7天走势，今日出价，今日竞价，2N7002E批发/采购报价，2N7002E行情走势销售排行榜，2N7002E报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2N7002E

丝印代码：703*；Small Signal MOSFET 60 V, 310 mA, Single, N?묬hannel, SOT??3

Features • Low RDS(on) • Small Footprint Surface Mount Package • Trench Technology • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoH

ONSEMI

安森美半导体

2N7002E

丝印代码：-2E；N-channel TrenchMOS FET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. Features ■ Logic level threshold compatible ■ Surface-mounted package ■ Very fast switching ■ TrenchMOS technology Applications ■ Logic level translator ■ High-sp

PHILIPS

飞利浦

2N7002E

Small Signal MOSFET Single N?묬hannel, 60 V, 310 mA, 2.5 Ohm

Features • Low RDS(on) • Small Footprint Surface Mount Package • Trench Technology • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

ONSEMI

安森美半导体

2N7002E

丝印代码：7E**；N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3  • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 7.5 ns • Low Input and Output Leakage • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low Offset Voltage • Low-Vo

VISHAYVishay Siliconix

威世威世科技公司

2N7002E

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capaci

DIODES

美台半导体

2N7002E

Super high dense cell design for low RDS (ON).

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

FCI

富加宜

2N7002E

N-Channel Enhanceent Mode Field Effect Transistor

Features ● Low On-Resistance: RDS(ON) ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage

KEXIN

科信电子

2N7002E

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low

VBSEMI

微碧半导体

2N7002E

N-CHANNEL ENHANCEMENT-MODE MOSFET

Features • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage

ZSELEC

淄博圣诺

2N7002E

N-CHANNEL ENHANCEMENT

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR • Low On-Resistance • Fast Switching Speed • Low-voltage drive • Easily designed drive circuits • Pb-Free Package is available. • Can protect against static electricity 1KV when the product is in use. • AEC-Q101 Pass

YEASHIN

亚昕科技

2N7002E

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：84.36 Kbytes Page：4 Pages

DIODES

美台半导体

2N7002E

N-Channel 60 V (D-S) MOSFET

文件：150.16 Kbytes Page：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

2N7002E

N-Channel 60 V (D-S) MOSFET

VISHAYVishay Siliconix

威世威世科技公司

2N7002E

General Purpose MOSFETs

PANASONIC

松下

2N7002E

N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

2N7002E

包装：管件 描述：N-CHANNEL SMD MOSFET ESD PROTECT 分立半导体产品 晶体管 - FET，MOSFET - 单个

ANBONSEMI

安邦

2N7002E

丝印代码：703*；Small Signal MOSFET

文件：94.52 Kbytes Page：5 Pages

ONSEMI

安森美半导体

2N7002E_V01

Small Signal MOSFET Single N?묬hannel, 60 V, 310 mA, 2.5 Ohm

Features • Low RDS(on) • Small Footprint Surface Mount Package • Trench Technology • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

ONSEMI

安森美半导体

2N7002E-7-F

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capaci

DIODES

美台半导体

2N7002EPT

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 0.250 Ampere CONSTRUCTION * N-Channel Enhancement MARKING * 702E FEATURE * Small surface mounting type. (SC-70/SOT-323) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability.

CHENMKO

力勤

2N7002EQ

N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002EQ is suitable for automotive applications requi

DIODES

美台半导体

2N7002EQ-13-F

丝印代码：K7B；N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002EQ is suitable for automotive applications requi

DIODES

美台半导体

2N7002EQ-7-F

丝印代码：K7B；N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002EQ is suitable for automotive applications requi

DIODES

美台半导体

2N7002ESEPT

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 500 mAmpere CONSTRUCTION * N-Channel Enhancement with ESD protection in input FEATURE * Small surface mounting type. (SOT-23) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capabilit

CHENMKO

力勤

2N7002ESPT

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 0.300 Ampere CONSTRUCTION * N-Channel Enhancement with ESD protection in input MARKING * PK1 FEATURE * Small surface mounting type. (SOT-23) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation

CHENMKO

力勤

2N7002E-T1-E3

N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3  • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 7.5 ns • Low Input and Output Leakage • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low Offset Voltage • Low-Vo

VISHAYVishay Siliconix

威世威世科技公司

2N7002ET1G

Small Signal MOSFET 60 V, 310 mA, Single, N?묬hannel, SOT??3

Features • Low RDS(on) • Small Footprint Surface Mount Package • Trench Technology • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoH

ONSEMI

安森美半导体

2N7002ET1G

Small Signal MOSFET Single N?묬hannel, 60 V, 310 mA, 2.5 Ohm

Features • Low RDS(on) • Small Footprint Surface Mount Package • Trench Technology • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

ONSEMI

安森美半导体

2N7002E-T1-GE3

N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3  • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 7.5 ns • Low Input and Output Leakage • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low Offset Voltage • Low-Vo

VISHAYVishay Siliconix

威世威世科技公司

2N7002ET7G

Small Signal MOSFET Single N?묬hannel, 60 V, 310 mA, 2.5 Ohm

Features • Low RDS(on) • Small Footprint Surface Mount Package • Trench Technology • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

ONSEMI

安森美半导体

2N7002E_10

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：84.36 Kbytes Page：4 Pages

DIODES

美台半导体

2N7002E_11

Small Signal MOSFET 60 V, 310 mA, Single, N.Channel, SOT.23

文件：100.96 Kbytes Page：5 Pages

ONSEMI

安森美半导体

2N7002E_15

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：110.77 Kbytes Page：5 Pages

DIODES

美台半导体

2N7002E_15

N-Channel Enhancement MOSFET

文件：1.23444 Mbytes Page：2 Pages

KEXIN

科信电子

2N7002E_16

Small Signal MOSFET

文件：94.52 Kbytes Page：5 Pages

ONSEMI

安森美半导体

2N7002E_V01

N-Channel 60 V (D-S) MOSFET

文件：150.16 Kbytes Page：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

2N7002E-13-F

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：110.77 Kbytes Page：5 Pages

DIODES

美台半导体

2N7002E-3

N-Channel Enhancement MOSFET

文件：1.24748 Mbytes Page：2 Pages

KEXIN

科信电子

2N7002E-7-F

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：110.77 Kbytes Page：5 Pages

DIODES

美台半导体

2N7002E-7-F

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：84.36 Kbytes Page：4 Pages

DIODES

美台半导体

2N7002E-7-G

包装：卷带（TR） 描述：MOSFET N-CH 60V SOT23 分立半导体产品 晶体管 - FET，MOSFET - 单个

DIODES

美台半导体

2N7002ELT1

310 mAmps, 60 Volts

文件：324.9 Kbytes Page：4 Pages

WILLAS

威伦电子

2N7002ET1G

Small Signal MOSFET

文件：94.52 Kbytes Page：5 Pages

ONSEMI

安森美半导体

2N7002ET1G

Small Signal MOSFET

文件：100.96 Kbytes Page：5 Pages

ONSEMI

安森美半导体

2N7002ET3G

Small Signal MOSFET

文件：100.96 Kbytes Page：5 Pages

ONSEMI

安森美半导体

2N7002

丝印代码：702；N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO

ZETEX

2N7002

丝印代码：72***；N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

VISHAYVishay Siliconix

威世威世科技公司

2N7002

丝印代码：702*；N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

SUTEX

2N7002

丝印代码：S72；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a

PANJIT

強茂

2N7002CSM

N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

文件：14.46 Kbytes Page：2 Pages

SEME-LAB

2N7002E产品属性

  • 类型

    描述

  • Pb-free：

    Pb

  • AEC Qualified：

    A

  • Halide free：

    H

  • PPAP Capablee：

    P

  • Status：

    Active

  • Channel Polarity：

    N-Channel

  • Configuration：

    Single

  • V(BR)DSS Min (V)：

    60

  • VGS Max (V)：

    20

  • VGS(th) Max (V)：

    2.5

  • ID Max (A)：

    0.31

  • PD Max (W)：

    0.042

  • RDS(on) Max @ VGS = 4.5 V(mΩ)：

    3000

  • RDS(on) Max @ VGS = 10 V(mΩ)：

    2500

  • Qg Typ @ VGS = 10 V (nC)：

    0.81

  • Ciss Typ (pF)：

    26.7

  • Package Type：

    SOT-23-3

2N7002E供应商更多...

更新时间：2026-5-20 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
2N7002ET1G
ON(安森美)
24+
标准封装
32048
全新原装正品/价格优惠/质量保障
询价
深圳市讯顺达科技有限公司
2N7002E
Slkor/萨科微
24+
SOT-23
50000
Slkor/萨科微一级代理,价格优势
询价
深圳市赛特兴科技有限公司
2N7002EDWT/R
PANJIT
23+
SOT-363
3000
正规渠道,只有原装!
询价
深圳市益百分电子有限公司
2N7002ET1G
ON/安森美
19+
NA
2000
询价
深圳市科恒伟业电子有限公司
2N7002E-G
MITSUBISHI
24+
SOT23
7850
只做原装正品现货或订货假一赔十!
询价
贸泽芯城（深圳）电子科技有限公司
2N7002ET1G
ON
23+
SOT-23
30100
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市明嘉莱科技有限公司
2N7002ET1G
ON Semiconductor Corporation
25+
SMD
918000
明嘉莱只做原装正品现货
询价
深圳市得捷芯城科技有限公司
2N7002ET1G
ON(安森美)
25+
SOT-23(SOT-23-3)
11580
原装正品现货,原厂订货,可支持含税原型号开票。
询价
深圳市芯球通科技有限公司
2N7002ET1G
ON(安森美)
23+
SOT-23(SOT-23-3)
12162
公司只做原装正品,假一赔十
询价
深圳市恒达亿科技有限公司
2N7002ET1G
ON
25+
SOT-23
6000
全新原装现货、诚信经营!
询价

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2N7002E规格书下载地址

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