位置:首页 > IC中文资料第466页 > 2N7002E
2N7002E价格
参考价格:¥0.1521
型号:2N7002E 品牌:Panasonic 备注:这里有2N7002E多少钱,2024年最近7天走势,今日出价,今日竞价,2N7002E批发/采购报价,2N7002E行情走势销售排行榜,2N7002E报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
2N7002E | N-channelTrenchMOSFET Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology. Features ■Logiclevelthresholdcompatible ■Surface-mountedpackage ■Veryfastswitching ■TrenchMOStechnology Applications ■Logicleveltranslator ■High-sp | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | ||
2N7002E | N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapaci | DIODESDiodes Incorporated 达尔科技 | ||
2N7002E | N-Channel60-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowOn-Resistance:3 •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:7.5ns •LowInputandOutputLeakage •ComplianttoRoHSDirective2002/95/EC BENEFITS •LowOffsetVoltage •Low-Vo | VishayVishay Siliconix 威世科技 | ||
2N7002E | N-ChannelEnhanceentModeFieldEffectTransistor Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | ||
2N7002E | SmallSignalMOSFET60V,310mA,Single,N?묬hannel,SOT??3 Features •LowRDS(on) •SmallFootprintSurfaceMountPackage •TrenchTechnology •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoH | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
2N7002E | N-CHANNELENHANCEMENT-MODEMOSFET Features •LowOn-Resistance:RDS(ON) •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | ||
2N7002E | SuperhighdensecelldesignforlowRDS(ON). FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-23package. | FCI Amphenol ICC | ||
2N7002E | N-CHANNELENHANCEMENT N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR •LowOn-Resistance •FastSwitchingSpeed •Low-voltagedrive •Easilydesigneddrivecircuits •Pb-FreePackageisavailable. •Canprotectagainststaticelectricity1KVwhen theproductisinuse. •AEC-Q101Pass | YEASHINYea Shin Technology Co., Ltd 亞昕科技亞昕科技股份有限公司 | ||
2N7002E | N-Channel60-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective2002/95/EC BENEFITS •Low | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | ||
2N7002E | SmallSignalMOSFETSingleN?묬hannel,60V,310mA,2.5Ohm Features •LowRDS(on) •SmallFootprintSurfaceMountPackage •TrenchTechnology •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSComp | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
2N7002E | N-Channel60V(D-S)MOSFET 文件:150.16 Kbytes Page:7 Pages | VishayVishay Siliconix 威世科技 | ||
2N7002E | N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件:84.36 Kbytes Page:4 Pages | DIODESDiodes Incorporated 达尔科技 | ||
2N7002E | SmallSignalMOSFET 文件:94.52 Kbytes Page:5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
2N7002E | 包装:管件 描述:N-CHANNEL SMD MOSFET ESD PROTECT 分立半导体产品 晶体管 - FET,MOSFET - 单个 | ITEITE Tech. Inc. 聯陽半導體 | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description •N-channelenhancementmodefieldeffecttransistor,designedforhighspeedpulsedamplifieranddriverapplications,whichismanufactoredbytheN-ChannelDMOSprocess. Features •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitching. •Ruggeda | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
N-ChannelEnhancement-ModeVerticalDMOSFETs GeneralDescription TheSupertex2N7002isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh | SUTEX Supertex, Inc | |||
N-CHANNELENHANCEMENTMODEVERTICALDMOSFET FEATURES *60VoltVCEO | Zetex Zetex Semiconductors | |||
N-Channel60-V(D-S)MOSFET FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI | VishayVishay Siliconix 威世科技 | |||
N-ChannelEnhancementModeFieldEffectTransistor Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
SmallSignalMOSFETSingleN?묬hannel,60V,310mA,2.5Ohm Features •LowRDS(on) •SmallFootprintSurfaceMountPackage •TrenchTechnology •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSComp | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapaci | DIODESDiodes Incorporated 达尔科技 | |||
N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE60VoltsCURRENT0.250Ampere CONSTRUCTION *N-ChannelEnhancement MARKING *702E FEATURE *Smallsurfacemountingtype.(SC-70/SOT-323) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapability. | CHENMKOCHENMKO CHENMKO | |||
N-CHANNELENHANCEMENTMODEMOSFET Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The2N7002EQissuitableforautomotiveapplications requi | DIODESDiodes Incorporated 达尔科技 | |||
N-CHANNELENHANCEMENTMODEMOSFET Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The2N7002EQissuitableforautomotiveapplications requi | DIODESDiodes Incorporated 达尔科技 | |||
N-CHANNELENHANCEMENTMODEMOSFET Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The2N7002EQissuitableforautomotiveapplications requi | DIODESDiodes Incorporated 达尔科技 | |||
N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE60VoltsCURRENT500mAmpere CONSTRUCTION *N-ChannelEnhancementwithESDprotectionininput FEATURE *Smallsurfacemountingtype.(SOT-23) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapabilit | CHENMKOCHENMKO CHENMKO | |||
N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE60VoltsCURRENT0.300Ampere CONSTRUCTION *N-ChannelEnhancementwithESDprotectionininput MARKING *PK1 FEATURE *Smallsurfacemountingtype.(SOT-23) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturation | CHENMKOCHENMKO CHENMKO | |||
N-Channel60V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowOn-Resistance:3 •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:7.5ns •LowInputandOutputLeakage •ComplianttoRoHSDirective2002/95/EC BENEFITS •LowOffsetVoltage •Low-Vo | VishayVishay Siliconix 威世科技 | |||
SmallSignalMOSFETSingleN?묬hannel,60V,310mA,2.5Ohm Features •LowRDS(on) •SmallFootprintSurfaceMountPackage •TrenchTechnology •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSComp | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SmallSignalMOSFET60V,310mA,Single,N?묬hannel,SOT??3 Features •LowRDS(on) •SmallFootprintSurfaceMountPackage •TrenchTechnology •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoH | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
N-Channel60V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowOn-Resistance:3 •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:7.5ns •LowInputandOutputLeakage •ComplianttoRoHSDirective2002/95/EC BENEFITS •LowOffsetVoltage •Low-Vo | VishayVishay Siliconix 威世科技 | |||
SmallSignalMOSFETSingleN?묬hannel,60V,310mA,2.5Ohm Features •LowRDS(on) •SmallFootprintSurfaceMountPackage •TrenchTechnology •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSComp | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件:84.36 Kbytes Page:4 Pages | DIODESDiodes Incorporated 达尔科技 | |||
SmallSignalMOSFET60V,310mA,Single,N.Channel,SOT.23 文件:100.96 Kbytes Page:5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
N-CHANNELENHANCEMENTMODEMOSFET 文件:110.77 Kbytes Page:5 Pages | DIODESDiodes Incorporated 达尔科技 | |||
N-ChannelEnhancementMOSFET 文件:1.23444 Mbytes Page:2 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
SmallSignalMOSFET 文件:94.52 Kbytes Page:5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
N-Channel60V(D-S)MOSFET 文件:150.16 Kbytes Page:7 Pages | VishayVishay Siliconix 威世科技 | |||
N-CHANNELENHANCEMENTMODEMOSFET 文件:110.77 Kbytes Page:5 Pages | DIODESDiodes Incorporated 达尔科技 | |||
N-ChannelEnhancementMOSFET 文件:1.24748 Mbytes Page:2 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件:84.36 Kbytes Page:4 Pages | DIODESDiodes Incorporated 达尔科技 | |||
N-CHANNELENHANCEMENTMODEMOSFET 文件:110.77 Kbytes Page:5 Pages | DIODESDiodes Incorporated 达尔科技 | |||
包装:卷带(TR) 描述:MOSFET N-CH 60V SOT23 分立半导体产品 晶体管 - FET,MOSFET - 单个 | PAMDiodes Incorporated 龙鼎威 | |||
310mAmps,60Volts 文件:324.9 Kbytes Page:4 Pages | WILLASWILLAS electronics corp 威倫威倫电子股份有限公司 | |||
SmallSignalMOSFET 文件:94.52 Kbytes Page:5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SmallSignalMOSFET 文件:100.96 Kbytes Page:5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SmallSignalMOSFET 文件:100.96 Kbytes Page:5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |
2N7002E产品属性
- 类型
描述
- 型号
2N7002E
- 功能描述
MOSFET 60V 240mA 0.5W 3.0ohm @ 10V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VISHAY |
23+ |
NA |
2443 |
专做原装正品,假一罚百! |
|||
ON |
21+ |
SOT-23 |
62000 |
全新进口原装现货QQ505546343电话 |
|||
VISHAY/威世 |
22+ |
SOT23 |
354000 |
||||
VISHAY/威世 |
22+ |
TO-236 |
25000 |
只有原装绝对原装,支持BOM配单! |
|||
ON |
22+ |
SOT23 |
6868 |
全新正品现货 有挂就有现货 |
|||
ON/安森美 |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
DIODES/美台 |
2023 |
SOT-23(SOT-23-3) |
7000 |
公司原装现货/支持实单 |
|||
VISHAY/威世 |
2102+ |
SOT23 |
6854 |
只做原厂原装正品假一赔十! |
|||
VISHAY |
23+ |
SOT-23 |
20000 |
原厂原装正品现货 |
|||
安邦 |
21+ |
SOT-723 |
30 |
全新原装鄙视假货15118075546 |
2N7002E规格书下载地址
2N7002E参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2N7052
- 2N7051
- 2N705
- 2N703
- 2N7013
- 2N7012
- 2N7008
- 2N7007
- 2N7002Z
- 2N7002X
- 2N7002W
- 2N7002V
- 2N7002T
- 2N7002S
- 2N7002P
- 2N7002M
- 2N7002L
- 2N7002K-RTK/P
- 2N7002KDW
- 2N7002K-7/BKN
- 2N7002K-7
- 2N7002K_R1_00001
- 2N7002K/BKN
- 2N7002K,215
- 2N7002K
- 2N7002H6327XTSA2
- 2N7002H6327
- 2N7002H
- 2N7002-G
- 2N7002G
- 2N7002F,215
- 2N7002F
- 2N7002E-T1-GE3
- 2N7002ET1G
- 2N7002E-T1-E3
- 2N7002E-T1
- 2N7002EPT
- 2N7002E-7-F
- 2N7002E,215
- 2N7002DW-TP
- 2N7002DWQ-7-F
- 2N7002DWH6327XTSA1
- 2N7002DWH6327XT
- 2N7002DWH6327
- 2N7002DWH63=WR1
- 2N7002DWA-7
- 2N7002DW-7-F/BKN
- 2N7002DW-7-F
- 2N7002DW_R1_00001
- 2N7002DW
- 2N7002D
- 2N7002CK,215
- 2N7002BKW,115
- 2N7002BKV,115
- 2N7002BKT,115
- 2N7002BKS,115
- 2N7002BKMB.315
- 2N7002BKMB,315
- 2N7002BKM,315
- 2N7002BK,215
- 2N7002B
- 2N7002A
- 2N7002_
- 2N7002
- 2N7001T
- 2N7000Z
- 2N7000P
- 2N7000K
- 2N7000G
- 2N7000A
- 2N7000
- 2N6S2
- 2N6S1
- 2N699B
- 2N6990
- 2N699
- 2N6989U
- 2N6989
- 2N6988
2N7002E数据表相关新闻
2N7002HWX
2N7002HWX
2024-1-22N7002 MOSFET N-CHANNEL
2N7002MOSFETN-CHANNEL60V115mA
2023-2-232N7002G-SOT23.3R-TG_UTC代理商
2N7002G-SOT23.3R-TG_UTC代理商
2023-2-62N7002ET1G
2N7002ET1G
2022-5-242N7002 7002
2N70027002
2021-10-192N7002 CJ/长电 SOT-23 支持原装长电订货型号,欢迎咨询!
2N7002CJ/长电SOT-23
2021-5-19
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80