2N7002E价格

参考价格:¥0.1521

型号:2N7002E 品牌:Panasonic 备注:这里有2N7002E多少钱,2024年最近7天走势,今日出价,今日竞价,2N7002E批发/采购报价,2N7002E行情走势销售排行榜,2N7002E报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2N7002E

N-channelTrenchMOSFET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology. Features ■Logiclevelthresholdcompatible ■Surface-mountedpackage ■Veryfastswitching ■TrenchMOStechnology Applications ■Logicleveltranslator ■High-sp

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
2N7002E

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapaci

DIODESDiodes Incorporated

达尔科技

DIODES
2N7002E

N-Channel60-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowOn-Resistance:3 •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:7.5ns •LowInputandOutputLeakage •ComplianttoRoHSDirective2002/95/EC BENEFITS •LowOffsetVoltage •Low-Vo

VishayVishay Siliconix

威世科技

Vishay
2N7002E

N-ChannelEnhanceentModeFieldEffectTransistor

Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2N7002E

SmallSignalMOSFET60V,310mA,Single,N?묬hannel,SOT??3

Features •LowRDS(on) •SmallFootprintSurfaceMountPackage •TrenchTechnology •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoH

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N7002E

N-CHANNELENHANCEMENT-MODEMOSFET

Features •LowOn-Resistance:RDS(ON) •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

ZSELEC
2N7002E

SuperhighdensecelldesignforlowRDS(ON).

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-23package.

FCI

Amphenol ICC

FCI
2N7002E

N-CHANNELENHANCEMENT

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR •LowOn-Resistance •FastSwitchingSpeed •Low-voltagedrive •Easilydesigneddrivecircuits •Pb-FreePackageisavailable. •Canprotectagainststaticelectricity1KVwhen theproductisinuse. •AEC-Q101Pass

YEASHINYea Shin Technology Co., Ltd

亞昕科技亞昕科技股份有限公司

YEASHIN
2N7002E

N-Channel60-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective2002/95/EC BENEFITS •Low

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI
2N7002E

SmallSignalMOSFETSingleN?묬hannel,60V,310mA,2.5Ohm

Features •LowRDS(on) •SmallFootprintSurfaceMountPackage •TrenchTechnology •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSComp

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N7002E

N-Channel60V(D-S)MOSFET

文件:150.16 Kbytes Page:7 Pages

VishayVishay Siliconix

威世科技

Vishay
2N7002E

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件:84.36 Kbytes Page:4 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
2N7002E

SmallSignalMOSFET

文件:94.52 Kbytes Page:5 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N7002E

包装:管件 描述:N-CHANNEL SMD MOSFET ESD PROTECT 分立半导体产品 晶体管 - FET,MOSFET - 单个

ITEITE Tech. Inc.

聯陽半導體

ITE

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description •N-channelenhancementmodefieldeffecttransistor,designedforhighspeedpulsedamplifieranddriverapplications,whichismanufactoredbytheN-ChannelDMOSprocess. Features •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitching. •Ruggeda

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

N-ChannelEnhancement-ModeVerticalDMOSFETs

GeneralDescription TheSupertex2N7002isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh

SUTEX

Supertex, Inc

SUTEX

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

FEATURES *60VoltVCEO

Zetex

Zetex Semiconductors

Zetex

N-Channel60-V(D-S)MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

VishayVishay Siliconix

威世科技

Vishay

N-ChannelEnhancementModeFieldEffectTransistor

Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

SmallSignalMOSFETSingleN?묬hannel,60V,310mA,2.5Ohm

Features •LowRDS(on) •SmallFootprintSurfaceMountPackage •TrenchTechnology •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSComp

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapaci

DIODESDiodes Incorporated

达尔科技

DIODES

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT0.250Ampere CONSTRUCTION *N-ChannelEnhancement MARKING *702E FEATURE *Smallsurfacemountingtype.(SC-70/SOT-323) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapability.

CHENMKOCHENMKO

CHENMKO

CHENMKO

N-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The2N7002EQissuitableforautomotiveapplications requi

DIODESDiodes Incorporated

达尔科技

DIODES

N-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The2N7002EQissuitableforautomotiveapplications requi

DIODESDiodes Incorporated

达尔科技

DIODES

N-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The2N7002EQissuitableforautomotiveapplications requi

DIODESDiodes Incorporated

达尔科技

DIODES

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT500mAmpere CONSTRUCTION *N-ChannelEnhancementwithESDprotectionininput FEATURE *Smallsurfacemountingtype.(SOT-23) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapabilit

CHENMKOCHENMKO

CHENMKO

CHENMKO

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT0.300Ampere CONSTRUCTION *N-ChannelEnhancementwithESDprotectionininput MARKING *PK1 FEATURE *Smallsurfacemountingtype.(SOT-23) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturation

CHENMKOCHENMKO

CHENMKO

CHENMKO

N-Channel60V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowOn-Resistance:3 •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:7.5ns •LowInputandOutputLeakage •ComplianttoRoHSDirective2002/95/EC BENEFITS •LowOffsetVoltage •Low-Vo

VishayVishay Siliconix

威世科技

Vishay

SmallSignalMOSFETSingleN?묬hannel,60V,310mA,2.5Ohm

Features •LowRDS(on) •SmallFootprintSurfaceMountPackage •TrenchTechnology •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSComp

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SmallSignalMOSFET60V,310mA,Single,N?묬hannel,SOT??3

Features •LowRDS(on) •SmallFootprintSurfaceMountPackage •TrenchTechnology •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoH

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N-Channel60V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowOn-Resistance:3 •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:7.5ns •LowInputandOutputLeakage •ComplianttoRoHSDirective2002/95/EC BENEFITS •LowOffsetVoltage •Low-Vo

VishayVishay Siliconix

威世科技

Vishay

SmallSignalMOSFETSingleN?묬hannel,60V,310mA,2.5Ohm

Features •LowRDS(on) •SmallFootprintSurfaceMountPackage •TrenchTechnology •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSComp

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件:84.36 Kbytes Page:4 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

SmallSignalMOSFET60V,310mA,Single,N.Channel,SOT.23

文件:100.96 Kbytes Page:5 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N-CHANNELENHANCEMENTMODEMOSFET

文件:110.77 Kbytes Page:5 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

N-ChannelEnhancementMOSFET

文件:1.23444 Mbytes Page:2 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

SmallSignalMOSFET

文件:94.52 Kbytes Page:5 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N-Channel60V(D-S)MOSFET

文件:150.16 Kbytes Page:7 Pages

VishayVishay Siliconix

威世科技

Vishay

N-CHANNELENHANCEMENTMODEMOSFET

文件:110.77 Kbytes Page:5 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

N-ChannelEnhancementMOSFET

文件:1.24748 Mbytes Page:2 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件:84.36 Kbytes Page:4 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

N-CHANNELENHANCEMENTMODEMOSFET

文件:110.77 Kbytes Page:5 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

包装:卷带(TR) 描述:MOSFET N-CH 60V SOT23 分立半导体产品 晶体管 - FET,MOSFET - 单个

PAMDiodes Incorporated

龙鼎威

PAM

310mAmps,60Volts

文件:324.9 Kbytes Page:4 Pages

WILLASWILLAS electronics corp

威倫威倫电子股份有限公司

WILLAS

SmallSignalMOSFET

文件:94.52 Kbytes Page:5 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SmallSignalMOSFET

文件:100.96 Kbytes Page:5 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SmallSignalMOSFET

文件:100.96 Kbytes Page:5 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

2N7002E产品属性

  • 类型

    描述

  • 型号

    2N7002E

  • 功能描述

    MOSFET 60V 240mA 0.5W 3.0ohm @ 10V

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-4-26 18:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY
23+
NA
2443
专做原装正品,假一罚百!
ON
21+
SOT-23
62000
全新进口原装现货QQ505546343电话
VISHAY/威世
22+
SOT23
354000
VISHAY/威世
22+
TO-236
25000
只有原装绝对原装,支持BOM配单!
ON
22+
SOT23
6868
全新正品现货 有挂就有现货
ON/安森美
21+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
DIODES/美台
2023
SOT-23(SOT-23-3)
7000
公司原装现货/支持实单
VISHAY/威世
2102+
SOT23
6854
只做原厂原装正品假一赔十!
VISHAY
23+
SOT-23
20000
原厂原装正品现货
安邦
21+
SOT-723
30
全新原装鄙视假货15118075546

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