N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

INTERFACE AND SWITCHING APPLICATION. FEATURES • High density cell design for low RDS(ON). • Voltage controolled small signal switch. • Rugged and reliable. • High saturation current capablity.

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • N-Cha

N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

N沟道 MOSFET

N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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FIELD EFFECT TRANSISTOR

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N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO

N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • N-Cha

MOSFET

Features - Trench power MV MOSFET technology. - Voltage controlled small signal switch. - Low input capacitance. - Fast switching speed. - Low input / output leakage.

N-Channel Enhancement MOSFET

High Speed Switching Applications ESD protected gate Low ON-resistance RDS(on) = 2.8 Ω (typ.) (@VGS = 10 V) RDS(on) = 3.1 Ω (typ.) (@VGS = 5 V) RDS(on) = 3.2 Ω (typ.) (@VGS = 4.5 V)

60 V, N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175 °C • Trench MOSFET technology • El

60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1110D-3 (SOT8015) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175

60 V, N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175 °C • Trench MOSFET technology • El

60 V, dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance

N-CHANNEL ENHANCEMENT MODE MOSFET

Features • N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • ESD Protected up to 1kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Stand

N-CHANNEL ENHANCEMENT MODE MOSFET

Features • N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • ESD Protected up to 1kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Stand

N-CHANNEL ENHANCEMENT MODE MOSFET

Features • N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • ESD Protected up to 1kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Stand

FIELD EFFECT TRANSISTOR

文件：57.11 Kbytes Page：4 Pages

N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：819.8 Kbytes Page：4 Pages

INTERFACE AND SWITCHING APPLICATION.

文件：819.8 Kbytes Page：4 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

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N-CHANNEL ENHANCEMENT MODE MOSFET

文件：141.32 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：141.32 Kbytes Page：6 Pages

MOSFETs (Field Effect Transistors)

小信号MOSFET