2N7002A价格
参考价格:¥0.2300
型号:2N7002A-7 品牌:Diodes 备注:这里有2N7002A多少钱,2026年最近7天走势,今日出价,今日竞价,2N7002A批发/采购报价,2N7002A行情走势销售排行榜,2N7002A报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N7002A | 丝印代码:WB;N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES • High density cell design for low RDS(ON). • Voltage controolled small signal switch. • Rugged and reliable. • High saturation current capablity. | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | ||
2N7002A | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • N-Cha | DIODES 美台半导体 | ||
2N7002A | 丝印代码:7002A;N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V) | YANGJIE 扬杰电子 | ||
2N7002A | 丝印代码:WB;N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件:819.8 Kbytes Page:4 Pages | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | ||
2N7002A | 丝印代码:WB;FIELD EFFECT TRANSISTOR 文件:57.11 Kbytes Page:4 Pages | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | ||
2N7002A | N沟道 MOSFET | NCEPOWER 新洁能 | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • N-Cha | DIODES 美台半导体 | |||
丝印代码:7002A.;MOSFET Features - Trench power MV MOSFET technology. - Voltage controlled small signal switch. - Low input capacitance. - Fast switching speed. - Low input / output leakage. | COMCHIP 典琦 | |||
丝印代码:NJ;N-Channel Enhancement MOSFET High Speed Switching Applications ESD protected gate Low ON-resistance RDS(on) = 2.8 Ω (typ.) (@VGS = 10 V) RDS(on) = 3.1 Ω (typ.) (@VGS = 5 V) RDS(on) = 3.2 Ω (typ.) (@VGS = 4.5 V) | YFWDIODE 佑风微 | |||
60 V, N-channel Trench MOSFET General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175 °C • Trench MOSFET technology • El | NEXPERIA 安世 | |||
丝印代码:QK;60 V, N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1110D-3 (SOT8015) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175 | NEXPERIA 安世 | |||
60 V, N-channel Trench MOSFET General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175 °C • Trench MOSFET technology • El | NEXPERIA 安世 | |||
丝印代码:D3;60 V, dual N-channel Trench MOSFET 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench | NEXPERIA 安世 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance | DIODES 美台半导体 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance | DIODES 美台半导体 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance | DIODES 美台半导体 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET Features • N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • ESD Protected up to 1kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Stand | DIODES 美台半导体 | |||
丝印代码:7A;N-CHANNEL ENHANCEMENT MODE MOSFET Features • N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • ESD Protected up to 1kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Stand | DIODES 美台半导体 | |||
丝印代码:7A;N-CHANNEL ENHANCEMENT MODE MOSFET Features • N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • ESD Protected up to 1kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Stand | DIODES 美台半导体 | |||
FIELD EFFECT TRANSISTOR 文件:57.11 Kbytes Page:4 Pages | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | |||
N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件:819.8 Kbytes Page:4 Pages | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件:141.32 Kbytes Page:6 Pages | DIODES 美台半导体 | |||
INTERFACE AND SWITCHING APPLICATION. 文件:819.8 Kbytes Page:4 Pages | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件:141.32 Kbytes Page:6 Pages | DIODES 美台半导体 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件:141.32 Kbytes Page:6 Pages | DIODES 美台半导体 | |||
MOSFETs (Field Effect Transistors) | DIOTEC 德欧泰克 | |||
小信号MOSFET | JINGDAO 晶导 | |||
丝印代码:S72;N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a | PANJIT 強茂 | |||
丝印代码:702*;N-Channel Enhancement-Mode Vertical DMOS FETs General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h | SUTEX | |||
丝印代码:702;N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES * 60 Volt VCEO | ZETEX | |||
丝印代码:72***;N-Channel 60-V (D-S) MOSFET FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 文件:14.46 Kbytes Page:2 Pages | SEME-LAB |
2N7002A产品属性
- 类型
描述
- Package:
SOT-23
- pol:
N
- VDS:
60 V
- RDSon:
2.0000 Ω
- ID:
1 A
- VGS:
10 V
- Tjmax:
150 °C
- Ptot:
0.350 W
- IDM:
1.200 A
- VGSth:
2.5 V
- ton:
20 ns
- toff:
20 ns
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
2021+ |
SOT-23 |
9000 |
原装现货,随时欢迎询价 |
|||
NCE新洁能 |
25+ |
SOT-23 |
100000 |
新结能全线供应,支持终端生产 |
|||
Nexperia |
26+ |
Modules |
100000 |
现货~进口原装|遥遥领先 |
|||
NCE新洁能 |
21+ |
SOT-23 |
25000 |
进口原装!长期供应!绝对优势价格(诚信经营 |
|||
扬杰科技 |
/ROHS.original |
NA |
82027 |
集成电路供应 -正纳电子/ 原材料及元器件 |
|||
KEC |
2025+ |
SOT-23 |
5000 |
原装进口价格优 请找坤融电子! |
|||
NCE |
26+ |
TO-220F |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
Nexperia(安世) |
25+ |
N/A |
22412 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
VBSEMI/台湾微碧 |
25+ |
SOT-23 |
90000 |
全新原装现货 |
|||
NCE新洁能 |
25+ |
SOT-23 |
55000 |
原厂代理部份现货价优 |
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2N7002A规格书下载地址
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2N7002 CJ/长电 SOT-23
2021-5-19
DdatasheetPDF页码索引
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