POWER MOS FIELD-EFFECT TRANSISTORS

Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power MOS Field-Effect Transistors DESCRIPTION ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device

P-Ch. Enhancement Mode Power MOS Field Effect Transistor

DESCRIPTION The 2N6898 is a P-channel enchancement-mode silicon-gate power MOS field-effect transisotr designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low g

SOA is power-dissipation limited

DESCRIPTION • SOA is power-dissipation limited • Nanosecond switching speeds • Linear transfer characteristics • High input impedance • Majority carrier device APPLICATIONS • The 2N6898 is designed for application such as switching regulators,switching converters,motor drivers, relay driver