8A, 100V, 0.180 Ohm, N-Channel Power MOSFET

8A, 100V, 0.180 Ohm, N-Channel Power MOSFET The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors r

100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor

[Omnirel] DESCRIPTION This hermetically packaged QPL product features the latest advanced MOSFET technology. It is ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls,

TMOS FET TRANSISTOR N - CHANNEL

FEATURES • VDSS = 100V • ID = 8A • RDSON = 0.18Ω

100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor

[Omnirel] DESCRIPTION This hermetically packaged QPL product features the latest advanced MOSFET technology. It is ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls,

POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=8.0A)

Description The HEXFET® technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high trans conductance. The HEXFE