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2N6786U

High-Reliability Transistors

This family of 2N6782U, 2N6784U and 2N6786U switching transistors are military qualified up to the JANTXV level for high-reliability applications.  These devices are also available in thru hole TO-205AF package.  Microsemi also offers numerous other transistor products to meet higher and lower power

MICROCHIP

微芯科技

N-Channel MOSFET in a Hermetically sealed TO39 Metal Package

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SEME-LAB

POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=3.6ohm, Id=1.25A)

The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high transconductance. The HEXFET transistors also fea

IRF

HEXFET TRANSISTOR

400Volt, 3.6Ω, HEXFET The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. The LCC provides designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the LCC packa

IRF

POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=3.6ohm, Id=1.25A)

The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high transconductance. The HEXFET transistors also fea

IRF

HEXFET TRANSISTOR

400Volt, 3.6Ω, HEXFET The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. The LCC provides designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the LCC packa

IRF

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