N-CHANNEL ENHANCEMENTE-MODE

Description The 2N6786 is an n-channel enhancement-mode silicon-gate power MOS field-effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low

N-Channel MOSFET in a Hermetically sealed TO39 Metal Package

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Single channel high reliability power MOSFETs

High-Reliability Transistors

POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=3.6ohm, Id=1.25A)

The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high transconductance. The HEXFET transistors also fea

HEXFET TRANSISTOR

400Volt, 3.6Ω, HEXFET The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. The LCC provides designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the LCC packa

Repetitive Avalanche Ratings

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