N-CHANNEL MOSFET

DESCRIPTION This family of 2N6782, 2N6784 and 2N6786 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a low profile U-18 LCC surface mount package. Microsemi also offers numerous other transistor products to

2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET

2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET The 2N6784 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transi

N-CHANNEL ENHANCEMENT-MODE

2.25A, 200V, 1.500Ohm, N-Channel Power MOSFET The 2N6784 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transis

HiRel MOSFETs

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2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET

N-Channel MOSFET in a Hermetically sealed TO39 Metal Package

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High-Reliability Transistors

This family of 2N6782U, 2N6784U and 2N6786U switching transistors are military qualified up to the JANTXV level for high-reliability applications.  These devices are also available in thru hole TO-205AF package.  Microsemi also offers numerous other transistor products to meet higher and lower power

N-CHANNEL MOSFET

DESCRIPTION This family of 2N6782, 2N6784 and 2N6786 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a low profile U-18 LCC surface mount package. Microsemi also offers numerous other transistor products to

POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=1.5ohm, Id=2.25A)

The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. The HEXFET transistors also fe

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET-R?쏷RANSISTORS SURFACE MOUNT (LCC-18)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS SURFACE MOUNT (LCC-18) The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. Desinged to be a close replacement for the TO-39 package, the LCC will give designers

POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=1.5ohm, Id=2.25A)

The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. The HEXFET transistors also fe

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET-R?쏷RANSISTORS SURFACE MOUNT (LCC-18)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS SURFACE MOUNT (LCC-18) The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. Desinged to be a close replacement for the TO-39 package, the LCC will give designers