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TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtransistorsalsofe

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2.25A,200V,1.500Ohm,N-ChannelPowerMOSFET The2N6784isanN-ChannelenhancementmodesilicongatepowerMOSfieldeffecttransistordesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransi

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DESCRIPTION Thisfamilyof2N6782,2N6784and2N6786switchingtransistorsaremilitaryqualifieduptotheJANTXVlevelforhigh-reliabilityapplications.ThesedevicesarealsoavailableinalowprofileU-18LCCsurfacemountpackage.Microsemialsooffersnumerousothertransistorproductsto

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2.25A,200V,1.500Ohm,N-ChannelPowerMOSFET The2N6784isanN-ChannelenhancementmodesilicongatepowerMOSfieldeffecttransistordesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransis

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DESCRIPTION Thisfamilyof2N6782,2N6784and2N6786switchingtransistorsaremilitaryqualifieduptotheJANTXVlevelforhigh-reliabilityapplications.ThesedevicesarealsoavailableinalowprofileU-18LCCsurfacemountpackage.Microsemialsooffersnumerousothertransistorproductsto

N-ChannelMOSFETinaHermeticallysealedTO39MetalPackage

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