N-CHANNEL MOSFET

DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other transistor products to

N-CHANNEL MOSFET

DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other transistor products to

N-CHANNEL MOSFET

DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other transistor products to

N-Channel Power MOSFETs, 12A, 450V/500V

Description These devices are n-channel, enchancement mode, power MOSFETs designed especially for high power, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VGS Rated at ±20 V • Silicon Gate for Fast Switching Spe

Single channel high reliability power MOSFETs

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 12A@ TC= 25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION · Switching Power Supplies · Motor Controls · Inverters

N-CHANNEL ENHANCEMENT MOSFET

Description These devices are n-channel, enchancement mode, power MOSFETs designed especially for high power, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VGS Rated at ±20 V • Silicon Gate for Fast Switching Spe

N-Channel Power MOSFETs,

Description These devices are n-channel, enchancement mode, power MOSFETs designed especially for high power, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VGS Rated at ±20 V • Silicon Gate for Fast Switching Spe

N-CHANNEL MOSFET

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N-CHANNEL MOSFET

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VGS Rated at 짹20V

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N-CHANNEL MOSFET

DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other transistor products to

High-Reliability Transistors

This family of 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 switching transistors are military qualified up to the JANTXV level for high-reliability applications.  These devices are also available in a thru hole TO-204AE metal can package.  Microsemi also offers numerous other transistor products to me

N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543

DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other transistor products to

N-CHANNEL MOSFET

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N-CHANNEL MOSFET

文件：244.82 Kbytes Page：5 Pages

POWER MOSFET N-CHANNEL(BVdss=500v, Rds(on)=0.40ohm, Id=12A)

The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and dio

TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.400ohm, Id=12A)

The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and dio

TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.400ohm, Id=12A)

The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and dio