位置：JANTXV2N6770 > JANTXV2N6770详情
JANTXV2N6770中文资料
JANTXV2N6770数据手册规格书PDF详情
The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
Features:
■ Repetitive Avalanche Ratings
■ Dynamic dv/dt Rating
■ Hermetically Sealed
■ Simple Drive Requirements
■ Ease of Paralleling
JANTXV2N6770产品属性
- 类型
描述
- 型号
JANTXV2N6770
- 制造商
International Rectifier
- 功能描述
100V THRU 500V, UP TO 38A, N-CH, ENHANCEMENT MODE MOSFET PWR - Bulk
- 制造商
Microsemi Corporation
- 功能描述
N CHANNEL MOSFET(NFET) - Bulk
更新时间：2025-10-12 15:30:00
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
260 |
|||||
IR |
三年内 |
1983 |
只做原装正品 |
||||
MICROSEMI |
638 |
原装正品 |
|||||
Microsemi Corporation |
22+ |
TO204AE |
9000 |
原厂渠道,现货配单 |
|||
INFINEON TECHNOLOGIES AG |
2118+ |
原厂封装 |
6800 |
公司现货全新原装假一罚十特价 |
|||
IR/MOT |
23+ |
SMD |
8650 |
受权代理!全新原装现货特价热卖! |
|||
IR |
23+ |
TO-3 |
8000 |
只做原装现货 |
|||
IR/MOT |
24+ |
TO-3 |
990000 |
明嘉莱只做原装正品现货 |
|||
IR |
23+ |
TO-3 |
7000 |
||||
HARRIS |
24+ |
can3 |
8500 |
原装现货假一罚十 |
JANTXV2N6770 资料下载更多...
JANTXV2N6770 芯片相关型号
Datasheet数据表PDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
