The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.

Features:

■ Repetitive Avalanche Ratings

■ Dynamic dv/dt Rating

■ Hermetically Sealed

■ Simple Drive Requirements

■ Ease of Paralleling