2N67晶体管资料

  • 2N67别名:2N67三极管、2N67晶体管、2N67晶体三极管

  • 2N67生产厂家:英国维斯特科特半导体公司

  • 2N67制作材料:Ge-PNP

  • 2N67性质

  • 2N67封装形式

  • 2N67极限工作电压

  • 2N67最大电流允许值:0.05A

  • 2N67最大工作频率:<1MHZ或未知

  • 2N67引脚数

  • 2N67最大耗散功率:0.1W

  • 2N67放大倍数

  • 2N67图片代号:NO

  • 2N67vtest:0

  • 2N67htest:999900

  • 2N67atest:0.05

  • 2N67wtest:0.1

  • 2N67代换 2N67用什么型号代替:3AK51,

2N67价格

参考价格:¥2.7636

型号:2N6714 品牌:Ferranti 备注:这里有2N67多少钱,2025年最近7天走势,今日出价,今日竞价,2N67批发/采购报价,2N67行情走势销售排行榜,2N67报价。
型号 功能描述 生产厂家 企业 LOGO 操作

HIGH-CURRENT, SILICON N-P-N VERSAWATT TRANSISTORS

High-Current, Silicon N-P-N VERSAWATT Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH-CURRENT, SILICON N-P-N VERSAWATT TRANSISTORS

High-Current, Silicon N-P-N VERSAWATT Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH-CURRENT, SILICON N-P-N VERSAWATT TRANSISTORS

High-Current, Silicon N-P-N VERSAWATT Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 130V(Min) • High Switching Speed • Low Saturation Voltage APPLICATIONS • Designed for converters, inverters, pulse-width-modulated regulators and a variety of power switching circuits.

ISC

无锡固电

General Purpose Medium Power Amplifier

NPN SILICON PLANAR EPITAXIAL TRANSISTOR General Purpose Medium Power Amplifier

CDIL

PNP SILICON PLANAR EPITAXIAL TRANSISTOR

PNP SILICON PLANAR EPITAXIAL TRANSISTOR General Purpose Medium Power Amplif)ier

CDIL

PNP SILICON PLANAR EPITAXIAL TRANSISTOR

PNP SILICON PLANAR EPITAXIAL TRANSISTOR General Purpose Medium Power Amplifier

CDIL

PNP Silicon Planar Epitaxial Transistor

PNP Silicon Planar Epitaxial Transistor TO237 Plastic Package General PurposeMedium Power Amplifier

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt

DIODES

美台半导体

COMPLEMENTARY SILICON POWER TRANSISTOR

COMPLEMENTARY SILICON POWER TRANSISTOR TO-237

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits.

CDIL

COMPLEMENTARY SILICON POWER TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6714, 2N6726 series types are complementary Silicon Plastic Power Transistors designed for general purpose power amplifier and switching applications.

Central

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt

Zetex

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits.

boca

博卡

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt

DIODES

美台半导体

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits.

CDIL

Amplifiers & Switches

Amplifiers & Switches Bipolar: General Purpose

AMMSEMI

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt

Zetex

COMPLEMENTARY SILICON POWER TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6714, 2N6726 series types are complementary Silicon Plastic Power Transistors designed for general purpose power amplifier and switching applications.

Central

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits.

boca

博卡

COMPLEMENTARY SILICON POWER TRANSISTOR

COMPLEMENTARY SILICON POWER TRANSISTOR TO-237

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt

DIODES

美台半导体

SI NPN POWER BJT

COMPLEMENTARY SILICON POWER TRANSISTOR TO-237

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits.

CDIL

NPN Plastic Encapsulated Transistor

FEATURES • High Voltage: VCEO = 100V • Gain of 20 @ IC = 0.5A

SECOS

喜可士

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt

Zetex

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits.

boca

博卡

COMPLEMENTARY SILICON

COMPLEMENTARY SILICON POWER TRANSISTORS 2N6716, 2N6728 Series types are Complementary Silicon Plastic Power Transistors designed for general purpose power amplifier and switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt

DIODES

美台半导体

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt

Zetex

COMPLEMENTARY SILICON

COMPLEMENTARY SILICON POWER TRANSISTORS 2N6716, 2N6728 Series types are Complementary Silicon Plastic Power Transistors designed for general purpose power amplifier and switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt

DIODES

美台半导体

SI NPN POWER BJT

COMPLEMENTARY SILICON POWER TRANSISTORS 2N6716, 2N6728 Series types are Complementary Silicon Plastic Power Transistors designed for general purpose power amplifier and switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

COMPLEMENTARY SILICON

COMPLEMENTARY SILICON POWER TRANSISTORS 2N6716, 2N6728 Series types are Complementary Silicon Plastic Power Transistors designed for general purpose power amplifier and switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • General Purpose Switching Application

JIANGSU

长电科技

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt

DIODES

美台半导体

NPN Silicon General Purpose Transistor 625mW

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Through Hole TO-92 Package • Capable of 625mWatts of Power Dissipation • Epoxy meets UL 94 V-0 flammability rating • Moisure

MCC

Silicon NPN transistor in a TO-126F Plastic Package

Descriptions Silicon NPN transistor in a TO-126F Plastic Package. Features High VCEO, large current. Applications Designed for general purpose medium power amplifier and switching.

FOSHAN

蓝箭电子

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

NPN SILICON PLANAR EPITAXIAL TRANSISTOR General Purpose Medium Power Amplifier

CDIL

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt

Zetex

TO-92 Plastic-Encapsulate Transistors

Features General Purpose Switching Application

DGNJDZ

南晶电子

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

2N67产品属性

  • 类型

    描述

  • 型号

    2N67

  • 功能描述

    High-Current silicon NPN Versawatt Transistors

更新时间:2025-12-25 11:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
23+
CAN to-39
16900
正规渠道,只有原装!
ON
23+
TO-92
4471
专注配单,只做原装进口现货
ISC
23+
TO-92L
50000
全新原装正品现货,支持订货
长电
25+23+
TO-92
24516
绝对原装正品全新进口深圳现货
GE
24+
823
ISC
25+
TO-92L
9500
百分百原装正品 真实公司现货库存 本公司只做原装 可
NSC
22+
TO-237
20000
只做原装
ISC
25+
TO-92L
860000
明嘉莱只做原装正品现货
ST
25+
CAN to-39
16900
原装,请咨询
ST
26+
CAN to-39
60000
只有原装 可配单

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