2N67晶体管资料

  • 2N67别名:2N67三极管、2N67晶体管、2N67晶体三极管

  • 2N67生产厂家:英国维斯特科特半导体公司

  • 2N67制作材料:Ge-PNP

  • 2N67性质

  • 2N67封装形式

  • 2N67极限工作电压

  • 2N67最大电流允许值:0.05A

  • 2N67最大工作频率:<1MHZ或未知

  • 2N67引脚数

  • 2N67最大耗散功率:0.1W

  • 2N67放大倍数

  • 2N67图片代号:NO

  • 2N67vtest:0

  • 2N67htest:999900

  • 2N67atest:0.05

  • 2N67wtest:0.1

  • 2N67代换 2N67用什么型号代替:3AK51,

2N67价格

参考价格:¥2.7636

型号:2N6714 品牌:Ferranti 备注:这里有2N67多少钱,2025年最近7天走势,今日出价,今日竞价,2N67批发/采购报价,2N67行情走势销售排行榜,2N67报价。
型号 功能描述 生产厂家 企业 LOGO 操作

HIGH-CURRENT, SILICON N-P-N VERSAWATT TRANSISTORS

High-Current, Silicon N-P-N VERSAWATT Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH-CURRENT, SILICON N-P-N VERSAWATT TRANSISTORS

High-Current, Silicon N-P-N VERSAWATT Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 130V(Min) • High Switching Speed • Low Saturation Voltage APPLICATIONS • Designed for converters, inverters, pulse-width-modulated regulators and a variety of power switching circuits.

ISC

无锡固电

HIGH-CURRENT, SILICON N-P-N VERSAWATT TRANSISTORS

High-Current, Silicon N-P-N VERSAWATT Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

General Purpose Medium Power Amplifier

NPN SILICON PLANAR EPITAXIAL TRANSISTOR General Purpose Medium Power Amplifier

CDIL

PNP SILICON PLANAR EPITAXIAL TRANSISTOR

PNP SILICON PLANAR EPITAXIAL TRANSISTOR General Purpose Medium Power Amplif)ier

CDIL

PNP SILICON PLANAR EPITAXIAL TRANSISTOR

PNP SILICON PLANAR EPITAXIAL TRANSISTOR General Purpose Medium Power Amplifier

CDIL

PNP Silicon Planar Epitaxial Transistor

PNP Silicon Planar Epitaxial Transistor TO237 Plastic Package General PurposeMedium Power Amplifier

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt

DIODES

美台半导体

COMPLEMENTARY SILICON POWER TRANSISTOR

COMPLEMENTARY SILICON POWER TRANSISTOR TO-237

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits.

CDIL

COMPLEMENTARY SILICON POWER TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6714, 2N6726 series types are complementary Silicon Plastic Power Transistors designed for general purpose power amplifier and switching applications.

Central

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt

Zetex

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits.

boca

博卡

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt

DIODES

美台半导体

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits.

CDIL

Amplifiers & Switches

Amplifiers & Switches Bipolar: General Purpose

AMMSEMI

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt

Zetex

COMPLEMENTARY SILICON POWER TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6714, 2N6726 series types are complementary Silicon Plastic Power Transistors designed for general purpose power amplifier and switching applications.

Central

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits.

boca

博卡

COMPLEMENTARY SILICON POWER TRANSISTOR

COMPLEMENTARY SILICON POWER TRANSISTOR TO-237

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt

DIODES

美台半导体

SI NPN POWER BJT

COMPLEMENTARY SILICON POWER TRANSISTOR TO-237

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt

DIODES

美台半导体

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits.

CDIL

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt

Zetex

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits.

boca

博卡

NPN Plastic Encapsulated Transistor

FEATURES • High Voltage: VCEO = 100V • Gain of 20 @ IC = 0.5A

SECOS

喜可士

COMPLEMENTARY SILICON

COMPLEMENTARY SILICON POWER TRANSISTORS 2N6716, 2N6728 Series types are Complementary Silicon Plastic Power Transistors designed for general purpose power amplifier and switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt

Zetex

COMPLEMENTARY SILICON

COMPLEMENTARY SILICON POWER TRANSISTORS 2N6716, 2N6728 Series types are Complementary Silicon Plastic Power Transistors designed for general purpose power amplifier and switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt

DIODES

美台半导体

SI NPN POWER BJT

COMPLEMENTARY SILICON POWER TRANSISTORS 2N6716, 2N6728 Series types are Complementary Silicon Plastic Power Transistors designed for general purpose power amplifier and switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

COMPLEMENTARY SILICON

COMPLEMENTARY SILICON POWER TRANSISTORS 2N6716, 2N6728 Series types are Complementary Silicon Plastic Power Transistors designed for general purpose power amplifier and switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • General Purpose Switching Application

JIANGSU

长电科技

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt

DIODES

美台半导体

NPN Silicon General Purpose Transistor 625mW

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Through Hole TO-92 Package • Capable of 625mWatts of Power Dissipation • Epoxy meets UL 94 V-0 flammability rating • Moisure

MCC

Silicon NPN transistor in a TO-126F Plastic Package

Descriptions Silicon NPN transistor in a TO-126F Plastic Package. Features High VCEO, large current. Applications Designed for general purpose medium power amplifier and switching.

FOSHAN

蓝箭电子

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

NPN SILICON PLANAR EPITAXIAL TRANSISTOR General Purpose Medium Power Amplifier

CDIL

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt

Zetex

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

TO-92 Plastic-Encapsulate Transistors

Features General Purpose Switching Application

DGNJDZ

南晶电子

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

NPN GENERAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A

UTC

友顺

2N67产品属性

  • 类型

    描述

  • 型号

    2N67

  • 功能描述

    High-Current silicon NPN Versawatt Transistors

更新时间:2025-12-25 9:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
TO-3
50000
全新原装正品现货,支持订货
2N6755
25+
100
100
24+
N/A
47000
一级代理-主营优势-实惠价格-不悔选择
MOTOROLA/摩托罗拉
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票
MOT
24+
CAN3
6540
原装现货/欢迎来电咨询
MOT
24+
CAN3
4326
公司原厂原装现货假一罚十!特价出售!强势库存!
IR
24+
TO-03
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!
Infineon(英飞凌)
24+
TO204
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
MOTOROLA
24+
CAN3
1200
原装现货假一罚十
RCA
25+
500V10A75WNPN
880000
明嘉莱只做原装正品现货

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