2N67晶体管资料
2N67别名：2N67三极管、2N67晶体管、2N67晶体三极管
2N67生产厂家：英国维斯特科特半导体公司
2N67制作材料：Ge-PNP
2N67性质：
2N67封装形式：
2N67极限工作电压：
2N67最大电流允许值：0.05A
2N67最大工作频率：<1MHZ或未知
2N67引脚数：
2N67最大耗散功率：0.1W
2N67放大倍数：
2N67图片代号：NO
2N67vtest：0
2N67htest：999900
- 2N67atest：0.05
2N67wtest：0.1
2N67代换 2N67用什么型号代替：3AK51,
2N67价格
参考价格：￥2.7636
型号：2N6714 品牌：Ferranti 备注：这里有2N67多少钱，2026年最近7天走势，今日出价，今日竞价，2N67批发/采购报价，2N67行情走势销售排行榜，2N67报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：2N6718；TO-92 Plastic-Encapsulate Transistors Features General Purpose Switching Application | DGNJDZ 南晶电子 |   | ||
丝印代码：2N6718；TO-92 Plastic-Encapsulate Transistors Features General Purpose Switching Application | DGNJDZ 南晶电子 | | ||
丝印代码：2N6727；TO-92 Plastic-Encapsulate Transistors Features General Purpose Switching Application | DGNJDZ 南晶电子 | | ||
丝印代码：2N6727；TO-92 Plastic-Encapsulate Transistors Features General Purpose Switching Application | DGNJDZ 南晶电子 | | ||
HIGH-CURRENT, SILICON N-P-N VERSAWATT TRANSISTORS High-Current, Silicon N-P-N VERSAWATT Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
HIGH-CURRENT, SILICON N-P-N VERSAWATT TRANSISTORS High-Current, Silicon N-P-N VERSAWATT Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 130V(Min) • High Switching Speed • Low Saturation Voltage APPLICATIONS • Designed for converters, inverters, pulse-width-modulated regulators and a variety of power switching circuits. | ISC 无锡固电 | | ||
HIGH-CURRENT, SILICON N-P-N VERSAWATT TRANSISTORS High-Current, Silicon N-P-N VERSAWATT Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
General Purpose Medium Power Amplifier NPN SILICON PLANAR EPITAXIAL TRANSISTOR General Purpose Medium Power Amplifier | CDIL | | ||
PNP SILICON PLANAR EPITAXIAL TRANSISTOR PNP SILICON PLANAR EPITAXIAL TRANSISTOR General Purpose Medium Power Amplif)ier | CDIL | | ||
PNP SILICON PLANAR EPITAXIAL TRANSISTOR PNP SILICON PLANAR EPITAXIAL TRANSISTOR General Purpose Medium Power Amplifier | CDIL | | ||
PNP Silicon Planar Epitaxial Transistor PNP Silicon Planar Epitaxial Transistor TO237 Plastic Package General PurposeMedium Power Amplifier | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
COMPLEMENTARY SILICON POWER TRANSISTOR COMPLEMENTARY SILICON POWER TRANSISTOR TO-237 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN SILICON PLANAR EPITAXIAL TRANSISTORS NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits. | CDIL | | ||
COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6714, 2N6726 series types are complementary Silicon Plastic Power Transistors designed for general purpose power amplifier and switching applications. | CENTRAL | | ||
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt | DIODES 美台半导体 | | ||
NPN SILICON PLANAR EPITAXIAL TRANSISTORS NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits. | BOCA 博卡 | | ||
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt | ZETEX | | ||
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt | DIODES 美台半导体 | | ||
COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6714, 2N6726 series types are complementary Silicon Plastic Power Transistors designed for general purpose power amplifier and switching applications. | CENTRAL | | ||
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt | DIODES 美台半导体 | | ||
NPN SILICON PLANAR EPITAXIAL TRANSISTORS NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits. | CDIL | | ||
COMPLEMENTARY SILICON POWER TRANSISTOR COMPLEMENTARY SILICON POWER TRANSISTOR TO-237 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SI NPN POWER BJT COMPLEMENTARY SILICON POWER TRANSISTOR TO-237 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt | ZETEX | | ||
NPN SILICON PLANAR EPITAXIAL TRANSISTORS NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits. | BOCA 博卡 | | ||
Amplifiers & Switches Amplifiers & Switches Bipolar: General Purpose | AMMSEMI | | ||
COMPLEMENTARY SILICON COMPLEMENTARY SILICON POWER TRANSISTORS 2N6716, 2N6728 Series types are Complementary Silicon Plastic Power Transistors designed for general purpose power amplifier and switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN Plastic Encapsulated Transistor FEATURES • High Voltage： VCEO = 100V • Gain of 20 @ IC = 0.5A | SECOS 喜可士 | | ||
NPN SILICON PLANAR EPITAXIAL TRANSISTORS NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits. | BOCA 博卡 | | ||
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt | ZETEX | | ||
NPN SILICON PLANAR EPITAXIAL TRANSISTORS NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits. | CDIL | | ||
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt | DIODES 美台半导体 | | ||
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt | DIODES 美台半导体 | | ||
COMPLEMENTARY SILICON COMPLEMENTARY SILICON POWER TRANSISTORS 2N6716, 2N6728 Series types are Complementary Silicon Plastic Power Transistors designed for general purpose power amplifier and switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SI NPN POWER BJT COMPLEMENTARY SILICON POWER TRANSISTORS 2N6716, 2N6728 Series types are Complementary Silicon Plastic Power Transistors designed for general purpose power amplifier and switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt | ZETEX | | ||
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt | ZETEX | | ||
NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A | UTC 友顺 | | ||
COMPLEMENTARY SILICON COMPLEMENTARY SILICON POWER TRANSISTORS 2N6716, 2N6728 Series types are Complementary Silicon Plastic Power Transistors designed for general purpose power amplifier and switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES • General Purpose Switching Application | JIANGSU 长电科技 | | ||
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt | DIODES 美台半导体 | | ||
NPN Silicon General Purpose Transistor 625mW Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Through Hole TO-92 Package • Capable of 625mWatts of Power Dissipation • Epoxy meets UL 94 V-0 flammability rating • Moisure | MCC | | ||
NPN SILICON PLANAR EPITAXIAL TRANSISTOR NPN SILICON PLANAR EPITAXIAL TRANSISTOR General Purpose Medium Power Amplifier | CDIL | | ||
Silicon NPN transistor in a TO-126F Plastic Package Descriptions Silicon NPN transistor in a TO-126F Plastic Package. Features High VCEO, large current. Applications Designed for general purpose medium power amplifier and switching. | FOSHAN 蓝箭电子 | | ||
NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A | UTC 友顺 | | ||
NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A | UTC 友顺 | | ||
NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A | UTC 友顺 | | ||
NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A | UTC 友顺 | | ||
NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A | UTC 友顺 | | ||
NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A | UTC 友顺 | | ||
NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A | UTC 友顺 | | ||
NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A | UTC 友顺 | | ||
NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A | UTC 友顺 | | ||
NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A | UTC 友顺 | | ||
NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A | UTC 友顺 | | ||
NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A | UTC 友顺 | | ||
NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A | UTC 友顺 | | ||
NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A | UTC 友顺 | | ||
NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A | UTC 友顺 | |
2N67产品属性
- 类型
描述
- Maximum Transition Frequency：
50(Min)MHz
- Maximum Power Dissipation：
50000mW
- Maximum Operating Temperature：
150ﾡC
- Maximum Emitter Base Voltage：
7V
- Maximum DC Collector Current：
7A
- Maximum Collector Emitter Voltage：
90V
- Maximum Collector Emitter Saturation Voltage：
0.8@0.6A@5A1.5@0.7A@7A
- Material：
Si
- Configuration：
Single
- Category：
Bipolar Power
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UTC/友顺 |
25+ |
SOT-89 |
880000 |
明嘉莱只做原装正品现货 |
|||
CJ/长电 |
21+ |
TO-92 |
30000 |
百域芯优势 实单必成 可开13点增值税发票 |
|||
ZETEX |
24+ |
T092 |
90000 |
||||
长电 |
25+23+ |
TO-92 |
24516 |
绝对原装正品全新进口深圳现货 |
|||
NS/国半 |
2450+ |
TO92 |
6885 |
只做原装正品假一赔十为客户做到零风险!! |
|||
长电 |
25+ |
TO-92 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
UTC |
19+ |
SOT-89 |
3060 |
全新 发货1-2天 |
|||
FSC |
24+ |
TO-92 |
663300 |
郑重承诺只做原装进口现货 |
|||
UTC |
24+ |
SOT89 |
5000 |
全新原装正品,现货销售 |
|||
CJ/长电 |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
2N67规格书下载地址
2N67参数引脚图相关
- 5000
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- 485接口
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- 2N6681
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- 2N6675
- 2N6674
- 2N6673
- 2N6672
- 2N6671
- 2N6668G
- 2N6668
- 2N6667G
- 2N6667
2N67数据表相关新闻
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2019-2-18
DdatasheetPDF页码索引
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