NPN EPITAXIAL PLANAR TRANSISTOR

Description The H2N6517 is designed for general purpose applications requiring high breakdown voltages. Features • High Collector-Emitter Breakdown Voltage • Low Collector-Emitter Saturation Voltage • The H2N6517 is complementary to H2N6520

NPN EPITAXIAL PLANAR TRANSISTOR

High Voltage Transistors

High Voltage Transistors NPN and PNP Features • Voltage and Current are Negative for PNP Transistors • Pb−Free Package is Available*

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * 350 Volt VCEO * Gain of 15 at IC=100mA

NPN EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCEO = 350V • Collector Dissipation: Pc (max) = 625mW

NPN Epitaxial Silicon Transistor

Features • High Voltage Transistor • Collector Dissipation: PC(max) = 625mW • Complement to 2N6520 • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)