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2N637晶体管资料
2N637别名：2N637三极管、2N637晶体管、2N637晶体三极管
2N637生产厂家：CSR_美国电子晶体管公司_美国硅晶体技术公司
2N637制作材料：Ge-PNP
2N637性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2N637封装形式：直插封装
2N637极限工作电压：40V
2N637最大电流允许值：5A
2N637最大工作频率：<1MHZ或未知
2N637引脚数：2
2N637最大耗散功率：60W
2N637放大倍数：
2N637图片代号：E-44
2N637vtest：40
2N637htest：999900
- 2N637atest：5
2N637wtest：60
2N637代换 2N637用什么型号代替：AL102,AL103,AUY28,2N1529,2N1534,2N1545,2N1546,2N1547,2N1548,2N3611,3AD56B,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N637 | POWER CONVERTER TRANSISTORS BENDIX GERMANIUM PNP POWER CONVERTER TRANSISTORS The Bendix 2N637, 2N637A and 2N637B are a series of hgih gain transistors especially designed as high current switching devices for DC-DC converter and DC-AC inverter circuits. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 |   | |
2N637 | Trans GP BJT NPN 150V 25A 3-Pin(2+Tab) TO-3 | ETC 知名厂家 | ETC | |
NPN SILICON RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistor DESCRIPTION • Excellent Safe Operating Area • DC Current Gain- : hFE=15-60(Min)@IC = 8A • Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC = 8A APPLICATIONS • Series and shunt regulators • High-fidelity amplifiers • Power-switching circuits | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • High dissipation capability • Excellent safe operating area APPLICATIONS • Series and shunt regulators • High-fidelity amplifiers • Power-switching circuits | SAVANTIC | | ||
POWER TRANSISTORS TO-3 CASE Power Transistors TO-3 Case (Continued) | Central | | ||
TO-3 Power Package Transistors (NPN) TO-3 Power Package Transistors (NPN) | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
HIGH POWER SILICON NPN TRANSISTORS HIGH POWER SILICON NPN TRANSISTORS The 2N6253, 2N6254, and 2N6371 are silicon NPN transistors intended for a wide variety of high-power applications. The construction of these devices renders them highly resistant to second breakdown over a wide range of operating conditions. These devices diffe | COMSET | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • High dissipation capability • Excellent safe operating area APPLICATIONS • Series and shunt regulators • High-fidelity amplifiers • Power-switching circuits | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • High dissipation capability • Excellent safe operating area APPLICATIONS • Series and shunt regulators • High-fidelity amplifiers • Power-switching circuits | JMNIC 锦美电子 | | ||
TO-3 Power Package Transistors (NPN) TO-3 Power Package Transistors (NPN) | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Excellent safe operating area APPLICATIONS • Designed for switching and wide-band amplifier applications | ISC 无锡固电 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5954 and 2N6372 SERIES types are complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER | Central | | ||
Power Transistors Power Transistors TO-66 Case | Central | | ||
Silicon N-P-N and P-N-P Medium-Power Transistors Silicon N-P-N AND P-N-P Medium-Power Transistor General-Purpose Types for Switching Applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Excellent safe operating area APPLICATIONS • Designed for switching and wide-band amplifier applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Excellent safe operating area APPLICATIONS • Designed for switching and wide-band amplifier applications | SAVANTIC | | ||
SI NPN POWER BJT Silicon N-P-N AND P-N-P Medium-Power Transistor General-Purpose Types for Switching Applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Excellent safe operating area APPLICATIONS • Designed for switching and wide-band amplifier applications | SAVANTIC | | ||
Power Transistors Power Transistors TO-66 Case | Central | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Excellent safe operating area APPLICATIONS • Designed for switching and wide-band amplifier applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Excellent safe operating area APPLICATIONS • Designed for switching and wide-band amplifier applications | ISC 无锡固电 | | ||
Silicon N-P-N and P-N-P Medium-Power Transistors Silicon N-P-N AND P-N-P Medium-Power Transistor General-Purpose Types for Switching Applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5954 and 2N6372 SERIES types are complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER | Central | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5954 and 2N6372 SERIES types are complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER | Central | | ||
Power Transistors Power Transistors TO-66 Case | Central | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Excellent safe operating area APPLICATIONS • Designed for switching and wide-band amplifier applications | ISC 无锡固电 | | ||
Silicon N-P-N and P-N-P Medium-Power Transistors Silicon N-P-N AND P-N-P Medium-Power Transistor General-Purpose Types for Switching Applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Excellent safe operating area APPLICATIONS • Designed for switching and wide-band amplifier applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Excellent safe operating area APPLICATIONS • Designed for switching and wide-band amplifier applications | SAVANTIC | | ||
NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
BJTS, SI PNP POWER 50 AMPERE POWER TRANSISTORS PNP SILICON 80, 100, 120 VOLTS 25-Watts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
50 AMPERE POWER TRANSISTORS PNP SILICON 50 AMPERE POWER TRANSISTORS PNP SILICON 80, 100, 120 VOLTS 25-Watts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
50 AMPERE POWER TRANSISTORS PNP SILICON 50 AMPERE POWER TRANSISTORS PNP SILICON 80, 100, 120 VOLTS 25-Watts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
50 AMPERE POWER TRANSISTORS PNP SILICON 50 AMPERE POWER TRANSISTORS PNP SILICON 80, 100, 120 VOLTS 25-Watts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
HIGH-POWER PNP SILICON 50 AMPERE POWER TRANSISTORS PNP SILICON 80, 100, 120 VOLTS 25-Watts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
BENDIX GERMANIUM PNP POWER CONVERTOR TRANSISTORS BENDIX GERMANIUM PNP POWER CONVERTER TRANSISTORS The Bendix 2N637, 2N637A and 2N637B are a series of hgih gain transistors especially designed as high current switching devices for DC-DC converter and DC-AC inverter circuits. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
POWER CONVERTER TRANSISTORS BENDIX GERMANIUM PNP POWER CONVERTER TRANSISTORS The Bendix 2N637, 2N637A and 2N637B are a series of hgih gain transistors especially designed as high current switching devices for DC-DC converter and DC-AC inverter circuits. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
POWER CONVERTER TRANSISTORS BENDIX GERMANIUM PNP POWER CONVERTER TRANSISTORS The Bendix 2N637, 2N637A and 2N637B are a series of hgih gain transistors especially designed as high current switching devices for DC-DC converter and DC-AC inverter circuits. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
BENDIX GERMANIUM PNP POWER CONVERTOR TRANSISTORS BENDIX GERMANIUM PNP POWER CONVERTER TRANSISTORS The Bendix 2N637, 2N637A and 2N637B are a series of hgih gain transistors especially designed as high current switching devices for DC-DC converter and DC-AC inverter circuits. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors 文件：153.94 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：153.94 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
HIGH POWER SILICON NPN TRANSISTORS 文件：88.12 Kbytes Page：4 Pages | COMSET | | ||
Silicon NPN Power Transistors 文件：112.91 Kbytes Page：3 Pages | SAVANTIC | | ||
Transistor | COMSET | | ||
Silicon NPN Power Transistors 文件：153.94 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
TO-3 Power Package Transistors (NPN) | ETC 知名厂家 | ETC | | |
Silicon NPN Power Transistors 文件：116.85 Kbytes Page：3 Pages | SAVANTIC | | ||
Bipolar NPN Device in a Hermetically sealed TO66 文件：15.16 Kbytes Page：1 Pages | SEME-LAB | | ||
Silicon N-P-N and P-N-P Medium-Power Transistors 文件：203.32 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors 文件：157.21 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS 文件：437.12 Kbytes Page：2 Pages | Central | | ||
Silicon NPN Power Transistors 文件：157.21 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS 文件：437.12 Kbytes Page：2 Pages | Central | | ||
Silicon N-P-N and P-N-P Medium-Power Transistors 文件：203.32 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Bipolar NPN Device in a Hermetically sealed TO66 文件：15.16 Kbytes Page：1 Pages | SEME-LAB | | ||
封装/外壳：TO-213AA，TO-66-2 包装：散装 描述：TRANS PNP 60V 6A TO66 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Microchip 微芯科技 | | ||
Silicon NPN Power Transistors 文件：116.85 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：116.85 Kbytes Page：3 Pages | SAVANTIC | | ||
Bipolar NPN Device in a Hermetically sealed TO66 文件：16.09 Kbytes Page：1 Pages | SEME-LAB | |
2N637产品属性
- 类型
描述
- 型号
2N637
- 功能描述
2N637 N7D4D/N7D4B
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT |
23+ |
TO-3 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
M |
95+ |
TO-3 |
30 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
23+ |
CAN to-39 |
16900 |
正规渠道,只有原装! |
|||
MOT |
24+ |
CAN3 |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
24+ |
TO-3 |
10000 |
全新 |
||||
MOTOROLA/摩托罗拉 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
MOTOROLA/摩托罗拉 |
专业铁帽 |
CAN3 |
1200 |
原装铁帽专营,代理渠道量大可订货 |
|||
MOT |
24+ |
CAN3 |
6540 |
原装现货/欢迎来电咨询 |
|||
Siliconicx |
25+ |
16 |
公司优势库存 热卖中!! |
||||
MOTOROLA |
24+ |
CAN3 |
1000 |
原装现货假一罚十 |
2N637芯片相关品牌
2N637规格书下载地址
2N637参数引脚图相关
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2N637数据表相关新闻
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原装代理
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2019-2-18
DdatasheetPDF页码索引
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