High-PowerNPNSiliconTransistors

...designedforuseinindustrial−militarypoweramplifierandswitchingcircuitapplications. •HighCollector−EmitterSustainingVoltage−VCEO(sus)=100Vdc(Min)−2N6338=150Vdc(Min)−2N6341 •HighDCCurrentGain−hFE=30−120@IC=10Adc=12(Min)@IC=25Adc •LowCollec

包装：卷带（TR） 描述：TRANS NPN 150V 25A TO-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

POWERTRANSISTORSNPNSILICON

...designedforuseinindustrial−militarypoweramplifierandswitchingcircuitapplications. •HighCollector−EmitterSustainingVoltage−VCEO(sus)=100Vdc(Min)−2N6338=150Vdc(Min)−2N6341 •HighDCCurrentGain−hFE=30−120@IC=10Adc=12(Min)@IC=25Adc •LowCollec

HIGH-POWERNPNSILICONTRANSISTORS

25AMPEREPOWERTRANSISTORNPNSILICON100-150VOLTS200WATTS

NPNPOWERSILICONTRANSISTOR

NPNPOWERSILICONTRANSISTOR QualifiedperMIL-PRF-19500/509

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3package •HighDCcurrentgain •Fastswitchingtimes •Lowcollectorsaturationvoltage •Complementtotype2N6436~38 APPLICATIONS •Foruseinindustrial-militarypoweramplifierandswitchingcircuitapplications

iscSiliconNPNPowerTransistors

DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=100V(Min)-2N6338=120V(Min)-2N6339=140V(Min)-2N6340=160V(Min)-2N6341 •HighSwitchingSpeed •LowSaturationVoltage-:VCE(sat)=1.0V(Max)@IC=10A APPLICATIONS •Designedforuseinindustrial-militarypoweramplifier