HIGH-POWER NPN SILICON TRANSISTORS

25 AMPERE POWER TRANSISTOR NPN SILICON 100-150 VOLTS 200 WATTS

POWER TRANSISTOR(25A,200W)

25 AMPERE POWER TRANSISTOR NPN SILICON 100-150 VOLTS 200 WATTS

Bipolar Transistor

Description: High Power TO-3, NPN, Silicon Transistor designed for use in industrial military power amplifier and switching circuit applications. Features: • Low Collector Saturation Voltage Vce = 1V (Max.) @ Ic = 10A • High DC Current Gain hfe = 30 to 120 @ Ic = 20mA Description High Po

isc Silicon NPN Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min)- 2N6338 = 120V(Min)- 2N6339 = 140V(Min)- 2N6340 = 160V(Min)- 2N6341 • High Switching Speed • Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 10A APPLICATIONS •Designed for use in industrial-military power amplifier

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High DC current gain • Fast switching times • Low collector saturation voltage • Complement to type 2N6436~38 APPLICATIONS • For use in industrial-military power amplifier and switching circuit applications

25 AMPERE POWER TRANSISTORS

25 AMPERE POWER TRANSISTORS NPN SILICON 100, 120, 140, 150 VOLTS 200 WATTS

SI NPN POWER BJT

25 AMPERE POWER TRANSISTORS NPN SILICON 100, 120, 140, 150 VOLTS 200 WATTS

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Fast switching times • Low collector saturation voltage • Complement to type 2N6436~38 APPLICATIONS • For use in industrial-military power amplifier and switching circuit applications

NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/509

POWER TRANSISTORS NPN SILICON

. . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) − 2N6338 = 150 Vdc (Min) − 2N6341 • High DC Current Gain − hFE = 30 − 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc • Low Collec

High-Power NPN Silicon Transistors

. . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) − 2N6338 = 150 Vdc (Min) − 2N6341 • High DC Current Gain − hFE = 30 − 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc • Low Collec

NPN Silicon Power 100V to 150V, 25A

This specification covers the performance requirements for NPN silicon power, 2N6338 and 2N6341 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/509. The device package for this specification sheet is

25 A, 150 V NPN Bipolar Power Transistor

The Power 25A 150 VBipolar NPN Transistor is designed for use in industrial-military power amplifier and switching circuit applications. • High Collector-Emitter Sustaining VoltageVCEO(sus) = 100 Vdc (Min)2N6338 VCEO(sus) = 150 Vdc (Min) - 2N6341\n• High DC Current GainhFE = 30 - 120 @ IC = 10 AdchFE = 12 (Min) @ IC = 25 Adc\n• Low Collector-Emitter Saturation VoltageVCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc\n• Fast Switching Times @ IC;

High-Power NPN Silicon Transistors

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Silicon NPN Power Transistors

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封装/外壳：TO-204AA，TO-3 包装：管件 描述：TRANS NPN 150V 25A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-204AA，TO-3 包装：散装 描述：TRANS NPN 150V 50UA TO3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High-Power NPN Silicon Transistors

. . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) − 2N6338 = 150 Vdc (Min) − 2N6341 • High DC Current Gain − hFE = 30 − 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc • Low Collec