P-N-P SILICON POWER TRANSISTORS

[Magnatec] FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N6326, 2N6327, 2N6328 • 200 W at 25 °C Case Temperature • 30-A Rated Collector Current • 200-mJ Reverse Energy Rating • High SOA Capability, 20 V and 10 A

P-N-P SILICON POWER TRANSISTORS

[Magnatec] FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N6326, 2N6327, 2N6328 • 200 W at 25 °C Case Temperature • 30-A Rated Collector Current • 200-mJ Reverse Energy Rating • High SOA Capability, 20 V and 10 A

25 AMPERE POWER TRANSISTORS

25 AMPERE POWER TRANSISTORS NPN SILICON 100, 120, 140, 150 VOLTS 200 WATTS

POWER TRANSISTORS NPN SILICON

. . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) − 2N6338 = 150 Vdc (Min) − 2N6341 • High DC Current Gain − hFE = 30 − 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc • Low Collec

HIGH-POWER NPN SILICON TRANSISTORS

25 AMPERE POWER TRANSISTOR NPN SILICON 100-150 VOLTS 200 WATTS

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High DC current gain • Fast switching times • Low collector saturation voltage • Complement to type 2N6436~38 APPLICATIONS • For use in industrial-military power amplifier and switching circuit applications

isc Silicon NPN Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min)- 2N6338 = 120V(Min)- 2N6339 = 140V(Min)- 2N6340 = 160V(Min)- 2N6341 • High Switching Speed • Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 10A APPLICATIONS •Designed for use in industrial-military power amplifier

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Fast switching times • Low collector saturation voltage • Complement to type 2N6436~38 APPLICATIONS • For use in industrial-military power amplifier and switching circuit applications

POWER TRANSISTOR(25A,200W)

25 AMPERE POWER TRANSISTOR NPN SILICON 100-150 VOLTS 200 WATTS

25 AMPERE NPN SILICON POWER TRANSISTOR

25 AMPERE POWER TRANSISTORS NPN SILICON 100, 120, 140, 150 VOLTS 200 WATTS

High-Power NPN Silicon Transistors

. . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) − 2N6338 = 150 Vdc (Min) − 2N6341 • High DC Current Gain − hFE = 30 − 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc • Low Collec

NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/509

High-Power NPN Silicon Transistors

. . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) − 2N6338 = 150 Vdc (Min) − 2N6341 • High DC Current Gain − hFE = 30 − 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc • Low Collec

25 AMPERE POWER TRANSISTORS

25 AMPERE POWER TRANSISTORS NPN SILICON 100, 120, 140, 150 VOLTS 200 WATTS

POWER TRANSISTOR(25A,200W)

25 AMPERE POWER TRANSISTOR NPN SILICON 100-150 VOLTS 200 WATTS

POWER TRANSISTORS NPN SILICON

. . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) − 2N6338 = 150 Vdc (Min) − 2N6341 • High DC Current Gain − hFE = 30 − 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc • Low Collec

HIGH-POWER NPN SILICON TRANSISTORS

25 AMPERE POWER TRANSISTOR NPN SILICON 100-150 VOLTS 200 WATTS

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Fast switching times • Low collector saturation voltage • Complement to type 2N6436~38 APPLICATIONS • For use in industrial-military power amplifier and switching circuit applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High DC current gain • Fast switching times • Low collector saturation voltage • Complement to type 2N6436~38 APPLICATIONS • For use in industrial-military power amplifier and switching circuit applications

isc Silicon NPN Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min)- 2N6338 = 120V(Min)- 2N6339 = 140V(Min)- 2N6340 = 160V(Min)- 2N6341 • High Switching Speed • Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 10A APPLICATIONS •Designed for use in industrial-military power amplifier

isc Silicon PNP Power Transistor

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isc Silicon PNP Power Transistor

文件：263.51 Kbytes Page：2 Pages

封装/外壳：TO-204AA，TO-3 包装：散装 描述：TRANS PNP 100V 30A TO3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

包装：散装 描述：NPN TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Power Transistors

文件：160.67 Kbytes Page：3 Pages

Silicon NPN Power Transistors

文件：116.96 Kbytes Page：3 Pages

High-Power NPN Silicon Transistors

文件：66.78 Kbytes Page：4 Pages

Silicon NPN Power Transistors

文件：160.67 Kbytes Page：3 Pages

Silicon NPN Power Transistors

文件：116.96 Kbytes Page：3 Pages

Bipolar NPN Device in a Hermetically sealed TO3

文件：15.52 Kbytes Page：1 Pages