P-N-P SILICON POWER TRANSISTORS

[Magnatec] FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N6326, 2N6327, 2N6328 • 200 W at 25 °C Case Temperature • 30-A Rated Collector Current • 200-mJ Reverse Energy Rating • High SOA Capability, 20 V and 10 A

P-N-P SILICON POWER TRANSISTORS

[Magnatec] FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N6326, 2N6327, 2N6328 • 200 W at 25 °C Case Temperature • 30-A Rated Collector Current • 200-mJ Reverse Energy Rating • High SOA Capability, 20 V and 10 A

isc Silicon NPN Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min)- 2N6338 = 120V(Min)- 2N6339 = 140V(Min)- 2N6340 = 160V(Min)- 2N6341 • High Switching Speed • Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 10A APPLICATIONS •Designed for use in industrial-military power amplifier

POWER TRANSISTORS NPN SILICON

. . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) − 2N6338 = 150 Vdc (Min) − 2N6341 • High DC Current Gain − hFE = 30 − 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc • Low Collec

High-Power NPN Silicon Transistors

. . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) − 2N6338 = 150 Vdc (Min) − 2N6341 • High DC Current Gain − hFE = 30 − 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc • Low Collec

NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/509

HIGH-POWER NPN SILICON TRANSISTORS

25 AMPERE POWER TRANSISTOR NPN SILICON 100-150 VOLTS 200 WATTS

POWER TRANSISTOR(25A,200W)

25 AMPERE POWER TRANSISTOR NPN SILICON 100-150 VOLTS 200 WATTS

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High DC current gain • Fast switching times • Low collector saturation voltage • Complement to type 2N6436~38 APPLICATIONS • For use in industrial-military power amplifier and switching circuit applications

25 AMPERE POWER TRANSISTORS

25 AMPERE POWER TRANSISTORS NPN SILICON 100, 120, 140, 150 VOLTS 200 WATTS

25 AMPERE NPN SILICON POWER TRANSISTOR

25 AMPERE POWER TRANSISTORS NPN SILICON 100, 120, 140, 150 VOLTS 200 WATTS

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Fast switching times • Low collector saturation voltage • Complement to type 2N6436~38 APPLICATIONS • For use in industrial-military power amplifier and switching circuit applications

25 A，100 V，NPN 双极功率晶体管

The Power 25A 150 VBipolar NPN Transistor is designed for use in industrial-military power amplifier and switching circuit applications. • High Collector-Emitter Sustaining VoltageVCEO(sus) = 100 V\n• High DC Current GainhFE = 30 - 120 @ IC = 10 AdchFE = 12 (Min) @ IC = 25 Adc\n• Low Collector-Emitter Saturation VoltageVCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc\n• Fast Switching Times @ IC = 10 Adc tr = 0.3 µs (Max) ts = 1.0 µs (Max) tf ;

NPN Silicon Power 100V to 150V, 25A

This specification covers the performance requirements for NPN silicon power, 2N6338 and 2N6341 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/509. The device package for this specification sheet is

High-Power NPN Silicon Transistors

. . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) − 2N6338 = 150 Vdc (Min) − 2N6341 • High DC Current Gain − hFE = 30 − 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc • Low Collec

HIGH-POWER NPN SILICON TRANSISTORS

25 AMPERE POWER TRANSISTOR NPN SILICON 100-150 VOLTS 200 WATTS

POWER TRANSISTOR(25A,200W)

25 AMPERE POWER TRANSISTOR NPN SILICON 100-150 VOLTS 200 WATTS

POWER TRANSISTORS NPN SILICON

. . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) − 2N6338 = 150 Vdc (Min) − 2N6341 • High DC Current Gain − hFE = 30 − 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc • Low Collec

isc Silicon NPN Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min)- 2N6338 = 120V(Min)- 2N6339 = 140V(Min)- 2N6340 = 160V(Min)- 2N6341 • High Switching Speed • Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 10A APPLICATIONS •Designed for use in industrial-military power amplifier

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High DC current gain • Fast switching times • Low collector saturation voltage • Complement to type 2N6436~38 APPLICATIONS • For use in industrial-military power amplifier and switching circuit applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Fast switching times • Low collector saturation voltage • Complement to type 2N6436~38 APPLICATIONS • For use in industrial-military power amplifier and switching circuit applications

25 AMPERE POWER TRANSISTORS

25 AMPERE POWER TRANSISTORS NPN SILICON 100, 120, 140, 150 VOLTS 200 WATTS

isc Silicon PNP Power Transistor

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isc Silicon PNP Power Transistor

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封装/外壳：TO-204AA，TO-3 包装：散装 描述：TRANS PNP 100V 30A TO3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Trans GP BJT PNP 100V 30A 3-Pin(2+Tab) TO-3

Silicon NPN Power Transistors

文件：160.67 Kbytes Page：3 Pages

Silicon NPN Power Transistors

文件：116.96 Kbytes Page：3 Pages

包装：散装 描述：NPN TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High-Power NPN Silicon Transistors

文件：66.78 Kbytes Page：4 Pages

Silicon NPN Power Transistors

文件：160.67 Kbytes Page：3 Pages

Silicon NPN Power Transistors

文件：116.96 Kbytes Page：3 Pages

Bipolar NPN Device in a Hermetically sealed TO3

文件：15.52 Kbytes Page：1 Pages