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2N62K3

N-Channel 650 V (D-S) MOSFET

文件:1.0872 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-Channel 650 V (D-S) Power MOSFET

文件:1.07762 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-channel 620 V, 3 ohm, 2.2 A SuperMESH3 Power MOSFET

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rende

STMICROELECTRONICS

意法半导体

N-channel 620 V, 3 ohm, 2.2 A SuperMESH3 Power MOSFET

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rende

STMICROELECTRONICS

意法半导体

N-channel 620 V, 3 ohm, 2.2 A SuperMESH3 Power MOSFET

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rende

STMICROELECTRONICS

意法半导体

N-channel 620 V, 3 ohm, 2.2 A SuperMESH3 Power MOSFET

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rende

STMICROELECTRONICS

意法半导体

更新时间:2026-5-19 15:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
23+
TO-220F
5000
专注配单,只做原装进口现货
TOSHIBA/东芝
2022+
TO-220F
12888
原厂代理 终端免费提供样品
NEXPERIA/安世
23+
SOT-323
69820
终端可以免费供样,支持BOM配单!

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