Darlington ComplementarySilicon Power Transistors

Darlington Complementary Silicon Power Transistors These packages are designed for general−purpose amplifier and low−frequency switching applications. Features • High DC Current Gain @ IC = 10 Adc − hFE = 2400 (Typ) − 2N6284 = 4000 (Typ) − 2N6287 • Collector−Emitter Sustaining Voltage − VCEO(s

封装/外壳：TO-204AA，TO-3 包装：管件 描述：TRANS PNP DARL 80V 20A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS

POWER TRANSISTORS(20A,160W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc — hFE = 2400 (Typ) — 2N6282, 2N6283, 2N6284 hFE = 4000 (Typ) — 2N6285, 2N6286, 2N6287 • Collector–Emitter Sustai

Darlington Complementary Silicon Power Transistors

Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc — hFE = 2400 (Typ) — 2N6282, 2N6283, 2N6284 hFE = 4000 (Typ) — 2N6285, 2N6286, 2N6287 • Collector–Emitter Sustai

PNP DARLINGTON POWER SILICON TRANSISTOR

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