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2N624晶体管资料
2N624别名：2N624三极管、2N624晶体管、2N624晶体三极管
2N624生产厂家：SYL
2N624制作材料：Ge-PNP
2N624性质：射频/高频放大 （HF）
2N624封装形式：直插封装
2N624极限工作电压：30V
2N624最大电流允许值：0.01A
2N624最大工作频率：>12MHZ
2N624引脚数：4
2N624最大耗散功率：0.1W
2N624放大倍数：
2N624图片代号：D-51
2N624vtest：30
2N624htest：12000100
- 2N624atest：0.01
2N624wtest：0.1
2N624代换 2N624用什么型号代替：AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,3AG54A,
2N624价格
参考价格：￥19.2761
型号：2N6248 品牌：Semiconductors 备注：这里有2N624多少钱，2025年最近7天走势，今日出价，今日竞价，2N624批发/采购报价，2N624行情走势销售排行榜，2N624报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon controlled Rectifiers Reverse Blocking Triode Thyristors Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • Passivated | Motorola 摩托罗拉 |   | ||
SILICON CONTROLLED RECTIFIERS Silicon Controlled Rectifiers Reverse Blocking Tride Thyristors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SILICON CONTROLLED RECTIFIERS Silicon Controlled Rectifiers Reverse Blocking Tride Thyristors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS [GE SOLID STATE] SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose types of switching and linear-amplifier applications | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose types of switching and linear-amplifier applications | SAVANTIC | | ||
Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose types of switching and linear-amplifier applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose types of switching and linear-amplifier applications | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose types of switching and linear-amplifier applications | ISC 无锡固电 | | ||
SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS [GE SOLID STATE] SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose types of switching and linear-amplifier applications | SAVANTIC | | ||
SI PNP POWER BJT SI PNP POWER BJT | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -3.5V(Max)@ IC= -10A APPLICATIONS ·Designed for DC-DC converter, emergency lighting inverter and general purpose applications | ISC 无锡固电 | | ||
BJTS, SI PNP POWER Description: BJTs, Si PNP Power | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS [GE SOLID STATE] SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
POWER TRANSISTORS TO-3 CASE Power Transistors TO-3 Case (Continued) | Central | | ||
Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose types of switching and linear-amplifier applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose types of switching and linear-amplifier applications | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose types of switching and linear-amplifier applications | SAVANTIC | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ·Low saturation voltage ·Fast switching capability APPLICATIONS ·For high voltage inverters ,switching regulators and line operated amplifier applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage,high speed ·Low collector saturation voltage APPLICATIONS ·High voltage inverters ·Switching regulators ·Line operated amplifier | SAVANTIC | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage,high speed ·Low collector saturation voltage APPLICATIONS ·High voltage inverters ·Switching regulators ·Line operated amplifier | ISC 无锡固电 | | ||
NPN Darlington Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/371 • TO-3 (TO-204AA) Package | MA-COM | | ||
POWER TRANSISTORS TO-3 CASE Power Transistors TO-3 Case (Continued) | Central | | ||
NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6249, 2N6250, 2N6251 types are Silicon NPN Triple Diffused Mesa Transistors designed for high voltage, high current, high speed switching applications. | Central | | ||
NPN POWER SILICON TRANSISTOR NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/510 | Microsemi 美高森美 | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS HIGH VOLTAGE NPN SILICON POWER TRANSISTORS The 2N6249 – 2N6250 – 2N6251 are NPN silicon transistors in Jedec TO-3. They are designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications. | COMSET | | ||
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS HIGH VOLTAGE NPN SILICON POWER TRANSISTORS The 2N6249 - 2N6250 - 2N6251 areNPN silicon transistors inJedec TO-3. They are designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications. • High Vo | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SILICON CONTROLLED RECTIFIERS 文件：252.62 Kbytes Page：3 Pages | DIGITRON | | ||
Reverse Blocking Triode Thyristors | ONSEMI 安森美半导体 | | ||
2.6A Silicon Controlled Rectifier | DIGITRON | | ||
SILICON CONTROLLED RECTIFIERS 文件：252.62 Kbytes Page：3 Pages | DIGITRON | | ||
Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. 文件：10.96 Kbytes Page：1 Pages | SEME-LAB | | ||
Bipolar Junction Transistors | TTELEC | | ||
Silicon PNP Power Transistor 文件：132 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Bipolar PNP Device 文件：11.3 Kbytes Page：1 Pages | SEME-LAB | | ||
Silicon PNP Power Transistors 文件：115.5 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon PNP Power Transistors 文件：128.12 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors 文件：128.12 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package 文件：11.3 Kbytes Page：1 Pages | SEME-LAB | | ||
Silicon PNP Power Transistors 文件：115.5 Kbytes Page：3 Pages | SAVANTIC | | ||
封装/外壳：TO-204AA，TO-3 包装：散装 描述：POWER BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Microchip 微芯科技 | | ||
封装/外壳：TO-204AA，TO-3 包装：散装 描述：POWER BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Microchip 微芯科技 | | ||
Silicon PNP Power Transistors 文件：115.5 Kbytes Page：3 Pages | SAVANTIC | | ||
Bipolar PNP Device in a Hermetically sealed TO3 文件：16.329 Kbytes Page：1 Pages | SEME-LAB | | ||
Bipolar NPN Device in a Hermetically sealed TO3 文件：15.53 Kbytes Page：1 Pages | SEME-LAB | | ||
HIGH VOLTAGE SILICON POWER TRANSISTORS 文件：126.18 Kbytes Page：4 Pages | COMSET | | ||
Silicon NPN Power Transistors 文件：128.009 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：116.19 Kbytes Page：3 Pages | SAVANTIC | | ||
HIGH VOLTAGE SILICON POWER TRANSISTORS 文件：126.18 Kbytes Page：4 Pages | COMSET | | ||
Silicon NPN Power Transistors 文件：128.009 Kbytes Page：3 Pages | JMNIC 锦美电子 | |
2N624产品属性
- 类型
描述
- 型号
2N624
- 制造商
ON Semiconductor
- 功能描述
Thyristor SCR 400V 35A 3-Pin TO-225
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
||||
ON |
24+ |
TO-3 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
2N6249 |
25+ |
20 |
20 |
||||
MOTOROLA/摩托罗拉 |
25+ |
TO-3 |
45000 |
MOTOROLA/摩托罗拉全新现货2N6249即刻询购立享优惠#长期有排单订 |
|||
MOT |
24+ |
CAN3 |
6540 |
原装现货/欢迎来电咨询 |
|||
MOT |
24+ |
CAN3 |
4326 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
IR |
23+ |
N/A |
7000 |
||||
MOTOROLA |
24+ |
TO-3 |
1500 |
原装现货假一罚十 |
|||
RCA |
新 |
15 |
全新原装 货期两周 |
||||
ON/安森美 |
专业铁帽 |
TO-3 |
1000 |
原装铁帽专营,代理渠道量大可订货 |
2N624芯片相关品牌
2N624规格书下载地址
2N624参数引脚图相关
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2N624数据表相关新闻
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2019-2-18
DdatasheetPDF页码索引
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