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2N624晶体管资料

  • 2N624别名:2N624三极管、2N624晶体管、2N624晶体三极管

  • 2N624生产厂家:SYL

  • 2N624制作材料:Ge-PNP

  • 2N624性质:射频/高频放大 (HF)

  • 2N624封装形式:直插封装

  • 2N624极限工作电压:30V

  • 2N624最大电流允许值:0.01A

  • 2N624最大工作频率:>12MHZ

  • 2N624引脚数:4

  • 2N624最大耗散功率:0.1W

  • 2N624放大倍数

  • 2N624图片代号:D-51

  • 2N624vtest:30

  • 2N624htest:12000100

  • 2N624atest:0.01

  • 2N624wtest:0.1

  • 2N624代换 2N624用什么型号代替:AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,3AG54A,

2N624价格

参考价格:¥19.2761

型号:2N6248 品牌:Semiconductors 备注:这里有2N624多少钱,2026年最近7天走势,今日出价,今日竞价,2N624批发/采购报价,2N624行情走势销售排行榜,2N624报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Silicon controlled Rectifiers Reverse Blocking Triode Thyristors

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • Passivated

MOTOROLA

摩托罗拉

SILICON CONTROLLED RECTIFIERS

Silicon Controlled Rectifiers Reverse Blocking Tride Thyristors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON CONTROLLED RECTIFIERS

Silicon Controlled Rectifiers Reverse Blocking Tride Thyristors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2.6A Silicon Controlled Rectifier

This Silicon Controlled Rectifier is packaged in TO-126 package, which has an average on-state current of 2.6 A.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

DIGITRON

Silicon PNP Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose types of switching and linear-amplifier applications

SAVANTIC

Silicon PNP Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose types of switching and linear-amplifier applications

JMNIC

锦美电子

Silicon PNP Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose types of switching and linear-amplifier applications

ISC

无锡固电

SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS

[GE SOLID STATE] SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS

ETCList of Unclassifed Manufacturers

未分类制造商

SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS

[GE SOLID STATE] SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon PNP Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose types of switching and linear-amplifier applications

ISC

无锡固电

SI PNP POWER BJT

SI PNP POWER BJT

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose types of switching and linear-amplifier applications

JMNIC

锦美电子

Silicon PNP Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose types of switching and linear-amplifier applications

SAVANTIC

Silicon PNP Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose types of switching and linear-amplifier applications

SAVANTIC

BJTS, SI PNP POWER

Description: BJTs, Si PNP Power

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS

[GE SOLID STATE] SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon PNP Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose types of switching and linear-amplifier applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -3.5V(Max)@ IC= -10A APPLICATIONS ·Designed for DC-DC converter, emergency lighting inverter and general purpose applications

ISC

无锡固电

Silicon PNP Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose types of switching and linear-amplifier applications

JMNIC

锦美电子

POWER TRANSISTORS TO-3 CASE

Power Transistors TO-3 Case (Continued)

CENTRAL

POWER TRANSISTORS TO-3 CASE

Power Transistors TO-3 Case (Continued)

CENTRAL

NPN Darlington Power Silicon Transistor

Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/371 • TO-3 (TO-204AA) Package

MA-COM

NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/510

MICROSEMI

美高森美

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6249, 2N6250, 2N6251 types are Silicon NPN Triple Diffused Mesa Transistors designed for high voltage, high current, high speed switching applications.

CENTRAL

HIGH VOLTAGE NPN SILICON POWER TRANSISTORS

HIGH VOLTAGE NPN SILICON POWER TRANSISTORS The 2N6249 – 2N6250 – 2N6251 are NPN silicon transistors in Jedec TO-3. They are designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications.

COMSET

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ·Low saturation voltage ·Fast switching capability APPLICATIONS ·For high voltage inverters ,switching regulators and line operated amplifier applications

JMNIC

锦美电子

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

HIGH VOLTAGE NPN SILICON POWER TRANSISTORS

HIGH VOLTAGE NPN SILICON POWER TRANSISTORS The 2N6249 - 2N6250 - 2N6251 areNPN silicon transistors inJedec TO-3. They are designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications. • High Vo

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage,high speed ·Low collector saturation voltage APPLICATIONS ·High voltage inverters ·Switching regulators ·Line operated amplifier

SAVANTIC

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage,high speed ·Low collector saturation voltage APPLICATIONS ·High voltage inverters ·Switching regulators ·Line operated amplifier

ISC

无锡固电

SILICON CONTROLLED RECTIFIERS

文件:252.62 Kbytes Page:3 Pages

DIGITRON

Reverse Blocking Triode Thyristors

ONSEMI

安森美半导体

SILICON CONTROLLED RECTIFIERS

文件:252.62 Kbytes Page:3 Pages

DIGITRON

Bipolar Junction Transistors

TTELEC

Bipolar PNP Device in a Hermetically sealed TO66 Metal Package.

文件:10.96 Kbytes Page:1 Pages

SEME-LAB

Bipolar PNP Device

文件:11.3 Kbytes Page:1 Pages

SEME-LAB

Silicon PNP Power Transistors

文件:128.12 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:115.5 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Power Transistor

文件:132 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

文件:128.12 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:115.5 Kbytes Page:3 Pages

SAVANTIC

Bipolar PNP Device in a Hermetically sealed TO3 Metal Package

文件:11.3 Kbytes Page:1 Pages

SEME-LAB

封装/外壳:TO-204AA,TO-3 包装:散装 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

封装/外壳:TO-204AA,TO-3 包装:散装 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

Bipolar PNP Device in a Hermetically sealed TO3

文件:16.329 Kbytes Page:1 Pages

SEME-LAB

Silicon PNP Power Transistors

文件:115.5 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:116.19 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:128.009 Kbytes Page:3 Pages

JMNIC

锦美电子

HIGH VOLTAGE SILICON POWER TRANSISTORS

文件:126.18 Kbytes Page:4 Pages

COMSET

Bipolar NPN Device in a Hermetically sealed TO3

文件:15.53 Kbytes Page:1 Pages

SEME-LAB

HIGH VOLTAGE SILICON POWER TRANSISTORS

文件:126.18 Kbytes Page:4 Pages

COMSET

Silicon NPN Power Transistors

文件:128.009 Kbytes Page:3 Pages

JMNIC

锦美电子

2N624产品属性

  • 类型

    描述

  • package_carrier:

    Tray

  • package_name:

    TO-3

  • Junction Temperature (掳C) (min):

    0

  • Junction Temperature (掳C) (typ):

    0

  • Junction Temperature (掳C) (max):

    200

  • Collector-Emitter Voltage (Base Open) (min):

    0

  • Collector-Emitter Voltage (Base Open) (typ):

    0

  • Collector-Emitter Voltage (Base Open) (max):

    200

  • Collector Current (dc) (min):

    0

  • Collector Current (dc) (typ):

    0

  • Collector Current (dc) (max):

    10

  • DC Current Gain (min):

    10

  • DC Current Gain (typ):

    0

  • DC Current Gain (max):

    50

更新时间:2026-5-15 13:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
专业铁帽
TO-3
1000
原装铁帽专营,代理渠道量大可订货
2N6249
25+
20
20
MOTOROLA
24+
TO-3
1500
原装现货假一罚十
MOTOROLA/摩托罗拉
25+
TO-3
45000
MOTOROLA/摩托罗拉全新现货2N6249即刻询购立享优惠#长期有排单订
ON
24+
TO-3
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
23+
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
MICROCHIP
23+
7300
专注配单,只做原装进口现货
MOT
24+
CAN3
4326
公司原厂原装现货假一罚十!特价出售!强势库存!
N/A
23+
NA
264
专做原装正品,假一罚百!
24+
TO-3
10000
全新

2N624数据表相关新闻