SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS

[GE SOLID STATE] SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS

POWER TRANSISTORS TO-3 CASE

Power Transistors TO-3 Case (Continued)

Silicon PNP Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose types of switching and linear-amplifier applications

Silicon PNP Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose types of switching and linear-amplifier applications

Silicon PNP Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose types of switching and linear-amplifier applications

BJTS, SI PNP POWER

Description: BJTs, Si PNP Power

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -3.5V(Max)@ IC= -10A APPLICATIONS ·Designed for DC-DC converter, emergency lighting inverter and general purpose applications

封装/外壳：TO-204AA，TO-3 包装：散装 描述：POWER BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon PNP Power Transistors

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Bipolar PNP Device in a Hermetically sealed TO3

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