Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 7.0 Amperes hFE = 30−150 @ IC = 3.0 Adc − 2N6111, 2N6288 = 2.3 (Min) @ IC = 7.0 Adc −

Complementary Silicon Plastic Power Transistors

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7 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 30 ??50 ??70 VOLTS, 40 WATTS

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封装/外壳：TO-220-3 包装：管件 描述：TRANS PNP 50V 7A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

POWER TRANSISTORS(7A,40W)

2N6107,2N6109,2N6111 -- >PNP 2N6288,2N6290,2N6292 --> NPN 7A 30 - 70 Volts 40 Watts

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 7.0 Amperes hFE = 30−150 @ IC = 3.0 Adc − 2N6111, 2N6288 = 2.3 (Min) @ IC = 7.0 Adc −

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

Complementary Power Transistors

[multicomp] Features: • Collector-Emitter sustaining voltage- VCEO(sus) = 50V (Minimum) - 2N6109, 2N6290. • DC current gain specified to 7.0 Amperes hFE = 2.3 (Minimum) at IC = 7.0A - 2N6109, 2N6290. • Complementary Silicon Plastic Power Transistors.

Complementary Silicon Plastic Power Transistors

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