POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 7.0 Amperes hFE = 30−150 @ IC = 3.0 Adc − 2N6111, 2N6288 = 2.3 (Min) @ IC = 7.0 Adc −

EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS

Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors General-Purpose Medium-Power Types for Switching and Amplifier Applications

PNP PLASTIC POWER TRANSISTOR

PNP PLASTIC POWER TRANSISTOR General Purpose Amplifier and Switching Application

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6107, 2N6288 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose power amplifier and switching applications.

POWER TRANSISTORS(7A,40W)

2N6107,2N6109,2N6111 -- >PNP 2N6288,2N6290,2N6292 --> NPN 7A 30 - 70 Volts 40 Watts

Complementary Silicon Plastic Power Transistor

Description: These devices are designed for use in general−purpose amplifier and switching applications. Features: • DC Current Gain Specified to 7A hfe = 30−150 @ Ic • Collector−Emitter Sustaining Voltage − Vceo(sus) = 50 V DC (Min) • High Current Gain − Bandwidth Product − ft = 10MHz (Min

Complementary Power Transistors

[multicomp] Features: • Collector-Emitter sustaining voltage- VCEO(sus) = 50V (Minimum) - 2N6109, 2N6290. • DC current gain specified to 7.0 Amperes hFE = 2.3 (Minimum) at IC = 7.0A - 2N6109, 2N6290. • Complementary Silicon Plastic Power Transistors.

Silicon PNP Power Transistors

DESCRIPTION • With TO-220 package • Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS • Power amplifier and switching circuits applications

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors

MAXIMUM RATINGS, ABSOLUTE-MAXIMUM VALUOS

Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors

Silicon PNP Power Transistors

DESCRIPTION • With TO-220 package • Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS • Power amplifier and switching circuits applications

7.0 A，50V，PNP 双极功率晶体管

The Power 7A 70 VBipolar NPN Transistor is designed for use in general-purpose amplifier and switching applications. • DC Current Gain Specified to 7.0 Amperes hFE = 30-150 @ IC hFE = 3.0 Adc 2N6111, 2N6288 hFE = 2.3 (Min) @ IC = 7.0 Adc - All Devices\n• Collector-Emitter Sustaining Voltage VCEO(sus) = 30 Vdc (Min) 2N6111, 2N6288 VCEO(sus) = 50 Vdc (Min) - 2N6109 VCEO(sus) = 70 Vdc (Min) - 2N6107, 2N6292\n• High C;

7 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 30 ??50 ??70 VOLTS, 40 WATTS

文件：117.76 Kbytes Page：5 Pages

Complementary Silicon Plastic Power Transistors

文件：112.3 Kbytes Page：5 Pages

Silicon PNP Power Transistors

文件：95.83 Kbytes Page：3 Pages

封装/外壳：TO-220-3 包装：散装 描述：TRANS PNP 50V 7A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TO-220 - Power Transistors and Darlingtons

文件：76.15 Kbytes Page：3 Pages

Complementary Silicon Plastic Power Transistors

文件：73.62 Kbytes Page：8 Pages

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 7.0 Amperes hFE = 30−150 @ IC = 3.0 Adc − 2N6111, 2N6288 = 2.3 (Min) @ IC = 7.0 Adc −

Complementary Silicon Plastic Power Transistors

文件：112.3 Kbytes Page：5 Pages

封装/外壳：TO-220-3 包装：管件 描述：TRANS PNP 50V 7A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

7 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 30 ??50 ??70 VOLTS, 40 WATTS

文件：117.76 Kbytes Page：5 Pages