2N610晶体管资料
2N610别名：2N610三极管、2N610晶体管、2N610晶体三极管
2N610生产厂家：CSR_美国电子晶体管公司_IDI
2N610制作材料：Ge-PNP
2N610性质：低频或音频放大 （LF）
2N610封装形式：直插封装
2N610极限工作电压：25V
2N610最大电流允许值：0.2A
2N610最大工作频率：<1MHZ或未知
2N610引脚数：3
2N610最大耗散功率：0.18W
2N610放大倍数：=80
2N610图片代号：D-9
2N610vtest：25
2N610htest：999900
- 2N610atest：0.2
2N610wtest：0.18
2N610代换 2N610用什么型号代替：AC122,AC125,AC126,AC151,2SB54,2SB56,2N1191,2N1192,2N1193,2N1194,3AK32,
2N610价格
参考价格：￥0.0000
型号：2N6103 品牌：RCA 备注：这里有2N610多少钱，2026年最近7天走势，今日出价，今日竞价，2N610批发/采购报价，2N610行情走势销售排行榜，2N610报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High current capability APPLICATIONS ·For use in general-purpose amplifier and switching applications | ISC 无锡固电 |   | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ··With TO-220 package APPLICATIONS ·For use in general-purpose amplifier and switching applications | JMNIC 锦美电子 | | ||
SILICON NPN POWER TRANSISTORS High-Current, Silicon N-P-N VERSAWATT Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SILICON N-P-N VERSAWATT TRANSISTORS High-Current, Silicon N-P-N VERSAWATT Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High current capability APPLICATIONS ·For use in general-purpose amplifier and switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High current capability APPLICATIONS ·For use in general-purpose amplifier and switching applications | SAVANTIC | | ||
SILICON N-P-N VERSAWATT TRANSISTORS High-Current, Silicon N-P-N VERSAWATT Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SILICON NPN POWER TRANSISTORS High-Current, Silicon N-P-N VERSAWATT Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ··With TO-220 package APPLICATIONS ·For use in general-purpose amplifier and switching applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High current capability APPLICATIONS ·For use in general-purpose amplifier and switching applications | ISC 无锡固电 | | ||
NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites. | CENTRAL | | ||
SILICON N-P-N VERSAWATT TRANSISTORS High-Current, Silicon N-P-N VERSAWATT Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • 2N6102 type with short pin APPLICATIONS • For use in general-purpose amplifier and switching applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • 2N6102 type with short pin APPLICATIONS • For use in general-purpose amplifier and switching applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • 2N6102 type with short pin APPLICATIONS • For use in general-purpose amplifier and switching applications | SAVANTIC | | ||
75Watt Silicon Epitaxial Planar PNP Power Transistors DESCRIPTION • With TO-220C package • 2N6102 type with short pin/leg • For use in general-purpose amplifier and switching applications | THINKISEMI 思祁半导体 | | ||
75Watt Silicon Epitaxial Planar PNP Power Transistors DESCRIPTION • With TO-220C package • 2N6102 type with short pin/leg • For use in general-purpose amplifier and switching applications | THINKISEMI 思祁半导体 | | ||
SILICON N-P-N VERSAWATT TRANSISTORS High-Current, Silicon N-P-N VERSAWATT Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • 2N6102 type with short pin APPLICATIONS • For use in general-purpose amplifier and switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • 2N6102 type with short pin APPLICATIONS • For use in general-purpose amplifier and switching applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • 2N6102 type with short pin APPLICATIONS • For use in general-purpose amplifier and switching applications | JMNIC 锦美电子 | | ||
NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites. | CENTRAL | | ||
RF POWER TRANSISTORS RF Power Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
RF POWER TRANSISTORS RF Power Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
MAXIMUM RATINGS, ABSOLUTE-MAXIMUM VALUOS Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·With short pin APPLICATIONS ·Power amplifier and switching circuits applications | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·With short pin APPLICATIONS ·Power amplifier and switching circuits applications | ISC 无锡固电 | | ||
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors General-Purpose Medium-Power Types for Switching and Amplifier Applications | BOCA 博卡 | | ||
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors General-Purpose Medium-Power Types for Switching and Amplifier Applications | BOCA 博卡 | | ||
POWER TRANSISTORS COMPLEMENTARY SILICON Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 7.0 Amperes hFE = 30−150 @ IC = 3.0 Adc − 2N6111, 2N6288 = 2.3 (Min) @ IC = 7.0 Adc − | ONSEMI 安森美半导体 | | ||
NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites. | CENTRAL | | ||
PLASTIC POWER TRANSISTORS PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications | CDIL | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6107, 2N6288 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose power amplifier and switching applications. | CENTRAL | | ||
PNP Silicon Complementary Power Transistor Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking:2N6107 • Mounting Torgue: 5 in-lbs | MCC | | ||
POWER TRANSISTORS(7A,40W) 2N6107,2N6109,2N6111 -- >PNP 2N6288,2N6290,2N6292 --> NPN 7A 30 - 70 Volts 40 Watts | MOSPEC 统懋 | | ||
PNP Epitaxial Silicon Transistor FEATURES ● DC Curent Gain Specified to 7A. ● Collector-Emitter Sustaining Voltage. ● High Current Gain. | BILIN 银河微电 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS • Power amplifier and switching circuits applications | ISC 无锡固电 | | ||
MAXIMUM RATINGS, ABSOLUTE-MAXIMUM VALUOS Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
PNP Transistor Bare Die Features Collector current up to 7A High DC Current Gain, hFE = 30-150 @ IC = 4A Low VCE(sat) = 3.5V Max @ IC = 7A Solderable back metal High Reliability tested grades for Military + Space | SS | | ||
PNP Transistor Bare Die Features Collector current up to 7A High DC Current Gain, hFE = 30-150 @ IC = 4A Low VCE(sat) = 3.5V Max @ IC = 7A Solderable back metal High Reliability tested grades for Military + Space | SS | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS • Power amplifier and switching circuits applications | SAVANTIC | | ||
SILICON PNP SWITCHING TRANSISTORS DESCRIPTION The 2N6107 and 2N6111 are epitaxial-base PNP silicon transistors in Jedec TO-220 plastic package. They are intended for a wide variety of medium power switching and linear applications. ■ SGS-THOMSON PREFERRED SALESTYPES ■ PNP TRANSISTORS APPLICATIONS: ■ LINEAR AND SWITCHING INDUS | STMICROELECTRONICS 意法半导体 | | ||
PNP Transistor Bare Die Features Collector current up to 7A High DC Current Gain, hFE = 30-150 @ IC = 4A Low VCE(sat) = 3.5V Max @ IC = 7A Solderable back metal High Reliability tested grades for Military + Space | SS | | ||
PLASTIC POWER TRANSISTORS PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications | CDIL | | ||
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors General-Purpose Medium-Power Types for Switching and Amplifier Applications | BOCA 博卡 | | ||
MAXIMUM RATINGS, ABSOLUTE-MAXIMUM VALUOS Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·With short pin APPLICATIONS ·Power amplifier and switching circuits applications | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·With short pin APPLICATIONS ·Power amplifier and switching circuits applications | ISC 无锡固电 | | ||
Complementary Silicon Plastic Power Transistor Description: These devices are designed for use in general−purpose amplifier and switching applications. Features: • DC Current Gain Specified to 7A hfe = 30−150 @ Ic • Collector−Emitter Sustaining Voltage − Vceo(sus) = 50 V DC (Min) • High Current Gain − Bandwidth Product − ft = 10MHz (Min | MULTICOMP 易络盟 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS • Power amplifier and switching circuits applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS • Power amplifier and switching circuits applications | SAVANTIC | | ||
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors General-Purpose Medium-Power Types for Switching and Amplifier Applications | BOCA 博卡 | | ||
POWER TRANSISTORS COMPLEMENTARY SILICON Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 7.0 Amperes hFE = 30−150 @ IC = 3.0 Adc − 2N6111, 2N6288 = 2.3 (Min) @ IC = 7.0 Adc − | ONSEMI 安森美半导体 | | ||
PNP PLASTIC POWER TRANSISTOR PNP PLASTIC POWER TRANSISTOR General Purpose Amplifier and Switching Application | CDIL | | ||
NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites. | CENTRAL | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6107, 2N6288 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose power amplifier and switching applications. | CENTRAL | | ||
Complementary Power Transistors [multicomp] Features: • Collector-Emitter sustaining voltage- VCEO(sus) = 50V (Minimum) - 2N6109, 2N6290. • DC current gain specified to 7.0 Amperes hFE = 2.3 (Minimum) at IC = 7.0A - 2N6109, 2N6290. • Complementary Silicon Plastic Power Transistors. | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
POWER TRANSISTORS(7A,40W) 2N6107,2N6109,2N6111 -- >PNP 2N6288,2N6290,2N6292 --> NPN 7A 30 - 70 Volts 40 Watts | MOSPEC 统懋 | | ||
MAXIMUM RATINGS, ABSOLUTE-MAXIMUM VALUOS Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |
2N610产品属性
- 类型
描述
- Maximum Transition Frequency：
10(Min)MHz
- Maximum Power Dissipation：
40000mW
- Maximum Operating Temperature：
150°C
- Maximum Emitter Base Voltage：
5V
- Maximum DC Collector Current：
7A
- Maximum Collector Emitter Voltage：
50V
- Maximum Collector Emitter Saturation Voltage：
3.5@3A@7AV
- Maximum Collector Base Voltage：
60V
- Material：
Si
- Configuration：
Single
- Category：
Bipolar Power
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
25+ |
标准封装 |
20000 |
原装，请咨询 |
|||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
onsemi(安森美) |
24+ |
TO-220 |
942 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
MOTOROLA |
24+ |
CAN3 |
1500 |
原装现货假一罚十 |
|||
ON |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
onsemi(安森美) |
25+ |
TO-220 |
12421 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ONSEMI/安森美 |
25+ |
TO-220 |
45000 |
ONSEMI/安森美全新现货2N6109即刻询购立享优惠#长期有排单订 |
|||
ON |
24+ |
N/A |
4326 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
ONSemiconductor |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
ON(安森美) |
24+ |
N/A |
18000 |
原装正品现货支持实单 |
2N610规格书下载地址
2N610参数引脚图相关
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- 4921
- 4899
- 485接口
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- 47301
- 4591
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- 2N6109
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- 2N6107
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- 2N6089
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2N610数据表相关新闻
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2019-2-18
DdatasheetPDF页码索引
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