位置:首页 > IC中文资料 > 2N61

2N61晶体管资料

  • 2N61别名:2N61三极管、2N61晶体管、2N61晶体三极管

  • 2N61生产厂家:CSR_美国电子晶体管公司_IDI

  • 2N61制作材料:Ge-PNP

  • 2N61性质:低频或音频放大 (LF)

  • 2N61封装形式:直插封装

  • 2N61极限工作电压:25V

  • 2N61最大电流允许值:0.1A

  • 2N61最大工作频率:<1MHZ或未知

  • 2N61引脚数:3

  • 2N61最大耗散功率

  • 2N61放大倍数:β=45

  • 2N61图片代号:D-9

  • 2N61vtest:25

  • 2N61htest:999900

  • 2N61atest:0.1

  • 2N61wtest:0

  • 2N61代换 2N61用什么型号代替:AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,3AX53A,

2N61价格

参考价格:¥0.0000

型号:2N6103 品牌:RCA 备注:这里有2N61多少钱,2026年最近7天走势,今日出价,今日竞价,2N61批发/采购报价,2N61行情走势销售排行榜,2N61报价。
型号 功能描述 生产厂家 企业 LOGO 操作

丝印代码:2N6193;SILICON PNP POWER TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6193 MOD 1 is a silicon PNP power transistor designed for amplifier and switching applications.

CENTRAL

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High current capability APPLICATIONS ·For use in general-purpose amplifier and switching applications

ISC

无锡固电

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ··With TO-220 package APPLICATIONS ·For use in general-purpose amplifier and switching applications

JMNIC

锦美电子

SILICON NPN POWER TRANSISTORS

High-Current, Silicon N-P-N VERSAWATT Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON N-P-N VERSAWATT TRANSISTORS

High-Current, Silicon N-P-N VERSAWATT Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High current capability APPLICATIONS ·For use in general-purpose amplifier and switching applications

SAVANTIC

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High current capability APPLICATIONS ·For use in general-purpose amplifier and switching applications

SAVANTIC

SILICON N-P-N VERSAWATT TRANSISTORS

High-Current, Silicon N-P-N VERSAWATT Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON NPN POWER TRANSISTORS

High-Current, Silicon N-P-N VERSAWATT Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ··With TO-220 package APPLICATIONS ·For use in general-purpose amplifier and switching applications

JMNIC

锦美电子

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High current capability APPLICATIONS ·For use in general-purpose amplifier and switching applications

ISC

无锡固电

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

CENTRAL

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • 2N6102 type with short pin APPLICATIONS • For use in general-purpose amplifier and switching applications

ISC

无锡固电

SILICON N-P-N VERSAWATT TRANSISTORS

High-Current, Silicon N-P-N VERSAWATT Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • 2N6102 type with short pin APPLICATIONS • For use in general-purpose amplifier and switching applications

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • 2N6102 type with short pin APPLICATIONS • For use in general-purpose amplifier and switching applications

SAVANTIC

75Watt Silicon Epitaxial Planar PNP Power Transistors

DESCRIPTION • With TO-220C package • 2N6102 type with short pin/leg • For use in general-purpose amplifier and switching applications

THINKISEMI

思祁半导体

75Watt Silicon Epitaxial Planar PNP Power Transistors

DESCRIPTION • With TO-220C package • 2N6102 type with short pin/leg • For use in general-purpose amplifier and switching applications

THINKISEMI

思祁半导体

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • 2N6102 type with short pin APPLICATIONS • For use in general-purpose amplifier and switching applications

SAVANTIC

SILICON N-P-N VERSAWATT TRANSISTORS

High-Current, Silicon N-P-N VERSAWATT Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • 2N6102 type with short pin APPLICATIONS • For use in general-purpose amplifier and switching applications

JMNIC

锦美电子

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

CENTRAL

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • 2N6102 type with short pin APPLICATIONS • For use in general-purpose amplifier and switching applications

ISC

无锡固电

RF POWER TRANSISTORS

RF Power Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RF POWER TRANSISTORS

RF Power Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·With short pin APPLICATIONS ·Power amplifier and switching circuits applications

ISC

无锡固电

MAXIMUM RATINGS, ABSOLUTE-MAXIMUM VALUOS

Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·With short pin APPLICATIONS ·Power amplifier and switching circuits applications

SAVANTIC

EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS

Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors General-Purpose Medium-Power Types for Switching and Amplifier Applications

BOCA

博卡

EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS

Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors General-Purpose Medium-Power Types for Switching and Amplifier Applications

BOCA

博卡

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 7.0 Amperes hFE = 30−150 @ IC = 3.0 Adc − 2N6111, 2N6288 = 2.3 (Min) @ IC = 7.0 Adc −

ONSEMI

安森美半导体

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications

CDIL

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

CENTRAL

PNP Epitaxial Silicon Transistor

FEATURES ● DC Curent Gain Specified to 7A. ● Collector-Emitter Sustaining Voltage. ● High Current Gain.

BILIN

银河微电

PNP Silicon Complementary Power Transistor

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking:2N6107 • Mounting Torgue: 5 in-lbs

MCC

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6107, 2N6288 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose power amplifier and switching applications.

CENTRAL

POWER TRANSISTORS(7A,40W)

2N6107,2N6109,2N6111 -- >PNP 2N6288,2N6290,2N6292 --> NPN 7A 30 - 70 Volts 40 Watts

MOSPEC

统懋

Silicon PNP Power Transistors

DESCRIPTION • With TO-220 package • Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS • Power amplifier and switching circuits applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-220 package • Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS • Power amplifier and switching circuits applications

ISC

无锡固电

MAXIMUM RATINGS, ABSOLUTE-MAXIMUM VALUOS

Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP Transistor Bare Die

Features  Collector current up to 7A  High DC Current Gain, hFE = 30-150 @ IC = 4A  Low VCE(sat) = 3.5V Max @ IC = 7A  Solderable back metal  High Reliability tested grades for Military + Space

SS

PNP Transistor Bare Die

Features Collector current up to 7A High DC Current Gain, hFE = 30-150 @ IC = 4A Low VCE(sat) = 3.5V Max @ IC = 7A Solderable back metal High Reliability tested grades for Military + Space

SS

SILICON PNP SWITCHING TRANSISTORS

DESCRIPTION The 2N6107 and 2N6111 are epitaxial-base PNP silicon transistors in Jedec TO-220 plastic package. They are intended for a wide variety of medium power switching and linear applications. ■ SGS-THOMSON PREFERRED SALESTYPES ■ PNP TRANSISTORS APPLICATIONS: ■ LINEAR AND SWITCHING INDUS

STMICROELECTRONICS

意法半导体

PNP Transistor Bare Die

Features Collector current up to 7A High DC Current Gain, hFE = 30-150 @ IC = 4A Low VCE(sat) = 3.5V Max @ IC = 7A Solderable back metal High Reliability tested grades for Military + Space

SS

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications

CDIL

EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS

Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors General-Purpose Medium-Power Types for Switching and Amplifier Applications

BOCA

博卡

MAXIMUM RATINGS, ABSOLUTE-MAXIMUM VALUOS

Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·With short pin APPLICATIONS ·Power amplifier and switching circuits applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·With short pin APPLICATIONS ·Power amplifier and switching circuits applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-220 package • Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS • Power amplifier and switching circuits applications

SAVANTIC

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MAXIMUM RATINGS, ABSOLUTE-MAXIMUM VALUOS

Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-220 package • Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS • Power amplifier and switching circuits applications

ISC

无锡固电

EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS

Epitaxial-Base, Silicon NPN and PNP VERSAWATT Transistors General-Purpose Medium-Power Types for Switching and Amplifier Applications

BOCA

博卡

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 7.0 Amperes hFE = 30−150 @ IC = 3.0 Adc − 2N6111, 2N6288 = 2.3 (Min) @ IC = 7.0 Adc −

ONSEMI

安森美半导体

PNP PLASTIC POWER TRANSISTOR

PNP PLASTIC POWER TRANSISTOR General Purpose Amplifier and Switching Application

CDIL

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

CENTRAL

POWER TRANSISTORS(7A,40W)

2N6107,2N6109,2N6111 -- >PNP 2N6288,2N6290,2N6292 --> NPN 7A 30 - 70 Volts 40 Watts

MOSPEC

统懋

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6107, 2N6288 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose power amplifier and switching applications.

CENTRAL

Complementary Silicon Plastic Power Transistor

Description: These devices are designed for use in general−purpose amplifier and switching applications. Features: • DC Current Gain Specified to 7A hfe = 30−150 @ Ic • Collector−Emitter Sustaining Voltage − Vceo(sus) = 50 V DC (Min) • High Current Gain − Bandwidth Product − ft = 10MHz (Min

MULTICOMP

易络盟

2N61产品属性

  • 类型

    描述

  • Maximum Transition Frequency:

    10(Min)MHz

  • Maximum Power Dissipation:

    40000mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Emitter Base Voltage:

    5V

  • Maximum DC Collector Current:

    7A

  • Maximum Collector Emitter Voltage:

    50V

  • Maximum Collector Emitter Saturation Voltage:

    3.5@3A@7AV

  • Maximum Collector Base Voltage:

    60V

  • Material:

    Si

  • Configuration:

    Single

  • Category:

    Bipolar Power

更新时间:2026-7-22 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
AAT
23+
TO-220/F
12000
全新原装假一赔十
FAI
13+
T0252
2500
原装现货价格有优势量大可以发货
AAT
23+
TO-220
5000
FAIRCHILD
26+
TO220
86720
全新原装正品价格最实惠 假一赔百
Bychip/百域芯
21+
TO-252
30000
实单必成 质强价优 可开13点增值税
TO-252
25+
NA
15659
振宏微专业只做正品,假一罚百!
25+
251252
5000
百分百原装正品 真实公司现货库存 本公司只做原装 可
AAT
22+
TO-220
8000
原装正品支持实单
FAIRCHILD
25+
TO-251
27500
原装正品,价格最低!
24+
48234

2N61数据表相关新闻