Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2N6040/6041/6042 • DARLINGTON • High DC current gain • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier and low-speed switching applications

NPN Silicon Power Darlington Transistor

GENERAL DESCRIPTION • Halogen free available upon request by adding suffix -HF • Silicon NPN medium power Darlington transistors in a plastic envelope, primarily for use in low-speed switching and general purpose. • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. Se

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general–purpose amplifier and low–speed switching applications. FEATURES: • Collector–Emitter Sustaining Voltage - VCEO(sus) = 60 V (Min) – 2N6040, 2N6043 = 80 V (Min) – 2N6041, 2N6044

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

POWER TRANSISTORS(10A,80W)

. . . designed for general–purpose amplifier and low–speed switching applications. FEATURES: • Collector–Emitter Sustaining Voltage - VCEO(sus) = 60 V (Min) – 2N6040, 2N6043 = 80 V (Min) – 2N6041, 2N6044 = 100 V (Min) – 2N6042, 2N6045 • Collecto

COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc − VCEO(sus) = 60 Vdc (M

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2N6040/6041/6042 • DARLINGTON • High DC current gain • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier and low-speed switching applications

POWER DERATING

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

NPN DARLINGTON TRANSISTOR

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

NPN Transistor Bare Die

Features: Collector current up to 8A Very high current gain Enables high impedance circuitry Solderable Back Metal High Reliability tested grades for Military + Space

封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN DARL 100V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Trans Darlington NPN 100V 10A 3-Pin(3+Tab) TO-220 Box

功率三极管

中等功率双极型晶体管

Plastic Medium?뭁ower Complementary Silicon Transistors

文件：94.72 Kbytes Page：6 Pages

NPN Silicon Power Darlington Transistor

文件：583.03 Kbytes Page：2 Pages

Plastic Medium-Power Complementary Silicon Transistors

文件：114.69 Kbytes Page：8 Pages

Plastic Medium-Power Complementary Silicon Transistors

文件：113.08 Kbytes Page：6 Pages

Plastic Medium-Power Complementary Silicon Transistors

文件：152.48 Kbytes Page：6 Pages

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

文件：260.18 Kbytes Page：2 Pages

Silicon NPN Power Transistors

文件：141.7 Kbytes Page：3 Pages

NPN Silicon Power Darlington Transistor

文件：583.03 Kbytes Page：2 Pages

封装/外壳：TO-220-3 包装：管件 描述：TRANS NPN DARL 100V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Plastic Medium?뭁ower Complementary Silicon Transistors

文件：94.72 Kbytes Page：6 Pages

Plastic Medium-Power Complementary Silicon Transistors

文件：152.48 Kbytes Page：6 Pages

Plastic Medium-Power Complementary Silicon Transistors

文件：113.08 Kbytes Page：6 Pages