Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications.

Features

• High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc

• Collector−Emitter Sustaining Voltage − @ 100 mAdc −

VCEO(sus) = 60 Vdc (Min) − 2N6040, 2N6043

= 100 Vdc (Min) − 2N6042, 2N6045

• Low Collector−Emitter Saturation Voltage −

VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc − 2N6043,44

= 2.0 Vdc (Max) @ IC = 3.0 Adc − 2N6042, 2N6045

• Monolithic Construction with Built−In Base−Emitter Shunt Resistors

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B > 8000 V

Machine Model, C > 400 V

• These Devices are Pb−Free and are RoHS Compliant*