COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc − VCEO(sus) = 60 Vdc (M

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general–purpose amplifier and low–speed switching applications. FEATURES: • Collector–Emitter Sustaining Voltage - VCEO(sus) = 60 V (Min) – 2N6040, 2N6043 = 80 V (Min) – 2N6041, 2N6044

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 1000(Min)@ IC= -4A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -4A • Complement to Type 2N6044 APPLICATIONS • Designed for general purpose amplifier and l