COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc − VCEO(sus) = 60 Vdc (M

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general–purpose amplifier and low–speed switching applications. FEATURES: • Collector–Emitter Sustaining Voltage - VCEO(sus) = 60 V (Min) – 2N6040, 2N6043 = 80 V (Min) – 2N6041, 2N6044

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER

POWER TRANSISTORS(10A,80W)

. . . designed for general–purpose amplifier and low–speed switching applications. FEATURES: • Collector–Emitter Sustaining Voltage - VCEO(sus) = 60 V (Min) – 2N6040, 2N6043 = 80 V (Min) – 2N6041, 2N6044 = 100 V (Min) – 2N6042, 2N6045 • Collecto

Transistor General Purpose

Description: A Silicon epitaxial PNP Darlington transistor in a TO-220 type Case designed for general-purpose amplifier and Low speed switching circuits. Features: • High DC Current Gain • Collector-Emitter Sustaining Voltage VCEO(SUS)=100V Min. • Monolithic Construction With Built-in Base-

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 1000(Min)@ IC= -4A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -4A • Complement to Type 2N6044 APPLICATIONS • Designed for general purpose amplifier and l

POWER DERATING

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

2N6041 - 单晶体管 双极, PNP, -80 V, 75 W, 8 A, 20000 hFE

The 2N6041 is a silicon PNP Darlington Transistor designed for general purpose amplifier and low-speed switching applications. ·High DC current gain\n·100V Minimum collector - emitter sustaining voltage VcE0(sus)\n·Monolithic construction with built-in base-emitter shunt resistors\n·-65 to 150°C Operating junction temperature range;

Trans Darlington PNP 80V 10A 3-Pin(3+Tab) TO-220 Box

Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP DARL 80V 8A TO-220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个