2N5882晶体管资料

  • 2N5882别名:2N5882三极管、2N5882晶体管、2N5882晶体三极管

  • 2N5882生产厂家:美国摩托罗拉半导体公司_ITX_美国晶体管有限公司

  • 2N5882制作材料:Si-NPN

  • 2N5882性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2N5882封装形式:直插封装

  • 2N5882极限工作电压:80V

  • 2N5882最大电流允许值:15A

  • 2N5882最大工作频率:>4MHZ

  • 2N5882引脚数:2

  • 2N5882最大耗散功率:160W

  • 2N5882放大倍数

  • 2N5882图片代号:E-44

  • 2N5882vtest:80

  • 2N5882htest:4000100

  • 2N5882atest:15

  • 2N5882wtest:160

  • 2N5882代换 2N5882用什么型号代替:BD315,BD745B,BDW51B,2N5303,2N5686,2N5620,2N5621,2N5622,2N5623,2N5624,2N5625,2N5626,2N5627,2N5628,2N5629,2N5630,2N5631,3CDA74B,

型号 功能描述 生产厂家&企业 LOGO 操作
2N5882

POWER TRANSISTORS(15A,160W)

General-Purpose Power Amplifier and Switching Applications FEATURES: * Low Collector-Emitter Saturation Voltage - VCE(SAT) = 1.0V(Max.) @ IC = 7.0A * Execllent DC Current Gain - hFE = 10 ~ 100 @ IC = 6.0 A

MOSPEC

统懋

2N5882

Silicon NPN High-Power Transistor

Silicon NPN High-Power Transistor . . . designed for general–purpose power amplifier and switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min) • DC Current Gain — hFE = 20 (Min) @ IC = 6.0 Adc • Low Collector — Emitter Saturation Voltage — VCE(sat) = 1.0 V

ONSEMI

安森美半导体

2N5882

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

2N5882

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5879 2N5880 APPLICATIONS • For general-purpose power amplifier and switching applications

SAVANTIC

2N5882

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5879 2N5880 APPLICATIONS • For general-purpose power amplifier and switching applications

JMNIC

锦美电子

2N5882

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5879 2N5880 APPLICATIONS • For general-purpose power amplifier and switching applications

ISC

无锡固电

2N5882

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

General-Purpose Power Amplifier and Switching Applications FEATURES: * Low Collector-Emitter Saturation Voltage - VCE(SAT) = 1.0V(Max.) @ IC = 7.0A * Execllent DC Current Gain - hFE = 10 ~ 100 @ IC = 6.0 A

boca

博卡

2N5882

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS ... designed for general-purpose power amplifier and switching applications. ● Collector-Emitter Sustaining Voltage - VCEO(sus) = 60 Vdc(Min) - 2N5879, 2N5881 = 60 Vdc(Min) - 2N5880, 2N5882 ● DC Current Gain - hFE = 20

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

2N5882

包装:卷带(TR) 描述:PNP POWER TRANSISTOR SILICON AMP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Microchip

微芯科技

2N5882

Silicon NPN Power Transistors

文件:114.32 Kbytes Page:3 Pages

SAVANTIC

2N5882产品属性

  • 类型

    描述

  • 型号

    2N5882

  • 制造商

    ON Semiconductor

  • 功能描述

    Trans GP BJT NPN 80V 30A 3-Pin(2+Tab) TO-3

  • 制造商

    Microsemi Corporation

  • 功能描述

    TRANS GP BJT NPN 80V 15A 3PIN TO-3 - Bulk

  • 制造商

    SPC Multicomp

  • 功能描述

    TRANSISTOR NPN TO-3

  • 制造商

    NTE Electronics

  • 功能描述

    T-NPN SI- PO AMP

更新时间:2025-8-9 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
TO204
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
MOTOROLA/摩托罗拉
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票
MOT
8639+/8821+
TO-3
300
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON
22+
TO-220-3
50000
ON二三极管全系列在售
MOTOROLA
23+
TO-3
5000
专注配单,只做原装进口现货
MOTO
23+
NA
557
专做原装正品,假一罚百!
MOT
24+
TO-3
10000
ON
1738+
TO-3
8529
科恒伟业!只做原装正品,假一赔十!
ON/安森美
23+
TO-3
28888
原厂授权代理,海外优势订货渠道。可提供大量库存,详
三年内
1983
只做原装正品

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