2N5882晶体管资料
2N5882别名：2N5882三极管、2N5882晶体管、2N5882晶体三极管
2N5882生产厂家：美国摩托罗拉半导体公司_ITX_美国晶体管有限公司
2N5882制作材料：Si-NPN
2N5882性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2N5882封装形式：直插封装
2N5882极限工作电压：80V
2N5882最大电流允许值：15A
2N5882最大工作频率：>4MHZ
2N5882引脚数：2
2N5882最大耗散功率：160W
2N5882放大倍数：
2N5882图片代号：E-44
2N5882vtest：80
2N5882htest：4000100
- 2N5882atest：15
2N5882wtest：160
2N5882代换 2N5882用什么型号代替：BD315,BD745B,BDW51B,2N5303,2N5686,2N5620,2N5621,2N5622,2N5623,2N5624,2N5625,2N5626,2N5627,2N5628,2N5629,2N5630,2N5631,3CDA74B,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N5882 | Silicon NPN High-Power Transistor Silicon NPN High-Power Transistor . . . designed for general–purpose power amplifier and switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min) • DC Current Gain — hFE = 20 (Min) @ IC = 6.0 Adc • Low Collector — Emitter Saturation Voltage — VCE(sat) = 1.0 V | ONSEMI 安森美半导体 |   | |
2N5882 | COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS General-Purpose Power Amplifier and Switching Applications FEATURES: * Low Collector-Emitter Saturation Voltage - VCE(SAT) = 1.0V(Max.) @ IC = 7.0A * Execllent DC Current Gain - hFE = 10 ~ 100 @ IC = 6.0 A | BOCA 博卡 | | |
2N5882 | POWER TRANSISTORS(15A,160W) General-Purpose Power Amplifier and Switching Applications FEATURES: * Low Collector-Emitter Saturation Voltage - VCE(SAT) = 1.0V(Max.) @ IC = 7.0A * Execllent DC Current Gain - hFE = 10 ~ 100 @ IC = 6.0 A | MOSPEC 统懋 | | |
2N5882 | Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
2N5882 | Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5879 2N5880 APPLICATIONS • For general-purpose power amplifier and switching applications | ISC 无锡固电 | | |
2N5882 | Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5879 2N5880 APPLICATIONS • For general-purpose power amplifier and switching applications | JMNIC 锦美电子 | | |
2N5882 | COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS ... designed for general-purpose power amplifier and switching applications. ● Collector-Emitter Sustaining Voltage - VCEO(sus) = 60 Vdc(Min) - 2N5879, 2N5881 = 60 Vdc(Min) - 2N5880, 2N5882 ● DC Current Gain - hFE = 20 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2N5882 | Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5879 2N5880 APPLICATIONS • For general-purpose power amplifier and switching applications | SAVANTIC | | |
2N5882 | Silicon NPN Power Transistors 文件：114.32 Kbytes Page：3 Pages | SAVANTIC | | |
2N5882 | 包装：卷带（TR） 描述：PNP POWER TRANSISTOR SILICON AMP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | MICROCHIP 微芯科技 | | |
2N5882 | Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch | CENTRAL | | |
2N5882 | 三极管 | MOSPEC 统懋 | | |
2N5882 | PNP Transistor | MICROCHIP 微芯科技 | |
2N5882产品属性
- 类型
描述
- VCBO (V)：
80
- VCEO (V)：
80
- PD (W)：
160
- PACKAGE：
TO-3
- NPN：
2N5882
- PNP：
2N5880
- HFE (Min/Max)：
20/100
- IC/VCE (A/V)：
6.0/4.0
- VCE(SAT) (V)：
1.0
- IC / IB (A/mA)：
7.0/700
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
25+ |
TO-204-2 |
20948 |
样件支持,可原厂排单订货! |
|||
onsemi(安森美) |
25+ |
TO-204-2 |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
MOTO |
23+ |
NA |
557 |
专做原装正品,假一罚百! |
|||
MOT |
24+ |
TO-3 |
10000 |
||||
ON |
22+ |
TO-220-3 |
50000 |
原装正品假一罚十,代理渠道价格优 |
|||
ONSemiconductor |
2003 |
TO-3 |
25 |
原装现货海量库存欢迎咨询 |
|||
MOT |
22+ |
TO-3 |
20000 |
公司只有原装 品质保证 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
MOT/RCA |
2023+ |
TO-3 |
50000 |
原装现货 |
|||
MOTOROLA |
23+ |
TO-3 |
5000 |
专注配单,只做原装进口现货 |
2N5882规格书下载地址
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2N5882数据表相关新闻
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原装代理
2022-7-232N5245
2N5245，当天发货0755-82732291全新原装现货或门市自取.
2020-8-5
DdatasheetPDF页码索引
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