COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

... designed for general-purpose power amplifier and switching applications.

● Collector-Emitter Sustaining Voltage -

VCEO(sus) = 60 Vdc(Min) - 2N5879, 2N5881

= 60 Vdc(Min) - 2N5880, 2N5882

● DC Current Gain -

hFE = 20 (Min) @ IC = 6.0 Adc

● Low Collector-Emitter Saturation Voltage -

VCE(sat) = 1.0 Vdc (Max) @ IC = 7.0 Adc

● High Current - Gain Bandwidth Product -

fT = 4.0 MHz (Min) @ IC = 1.0 Adc

● Recommended for New Circuit Designs