COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

General-Purpose Power Amplifier and Switching Applications FEATURES: * Low Collector-Emitter Saturation Voltage - VCE(SAT) = 1.0V(Max.) @ IC = 7.0A * Execllent DC Current Gain - hFE = 10 ~ 100 @ IC = 6.0 A

Power Transistors

Power Transistors

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5881 2N5882 APPLICATIONS • For general-purpose power amplifier and switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5881 2N5882 APPLICATIONS • For general-purpose power amplifier and switching applications

Silicon PNP Power Transistors

文件：114.83 Kbytes Page：3 Pages