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2N587晶体管资料

  • 2N587别名:2N587三极管、2N587晶体管、2N587晶体三极管

  • 2N587生产厂家:CSR_美国电子晶体管公司_IDI

  • 2N587制作材料:Ge-NPN

  • 2N587性质:低频或音频放大 (LF)_开关管 (S)

  • 2N587封装形式:直插封装

  • 2N587极限工作电压:40V

  • 2N587最大电流允许值:0.2A

  • 2N587最大工作频率:<1MHZ或未知

  • 2N587引脚数:3

  • 2N587最大耗散功率:0.15W

  • 2N587放大倍数

  • 2N587图片代号:C-65

  • 2N587vtest:40

  • 2N587htest:999900

  • 2N587atest:0.2

  • 2N587wtest:0.15

  • 2N587代换 2N587用什么型号代替:AC176,AC187,AC194,2N1302,3BX31C,

2N587价格

参考价格:¥0.0000

型号:2N5875 品牌:Semiconductors 备注:这里有2N587多少钱,2026年最近7天走势,今日出价,今日竞价,2N587批发/采购报价,2N587行情走势销售排行榜,2N587报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage APPLICATIONS • For medium-speed switching and amplifier applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage APPLICATIONS • For medium-speed switching and amplifier applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage APPLICATIONS • For medium-speed switching and amplifier applications

SAVANTIC

Silicon PNP Power Transistors

Description · With TO-3 package · Low collector saturation voltage APPLICATIONS · For medium-speed switching and amplifier applications

ISC

无锡固电

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMAPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 115 WATTS - TO-3 90 WATTS - TO-66

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon PNP Power Transistors

Description · With TO-3 package · Low collector saturation voltage APPLICATIONS · For medium-speed switching and amplifier applications

ISC

无锡固电

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMAPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 115 WATTS - TO-3 90 WATTS - TO-66

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage APPLICATIONS • For medium-speed switching and amplifier applications

SAVANTIC

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMAPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 115 WATTS - TO-3 90 WATTS - TO-66

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage APPLICATIONS • For medium-speed switching and amplifier applications

SAVANTIC

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage APPLICATIONS • For medium-speed switching and amplifier applications

ISC

无锡固电

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMAPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 115 WATTS - TO-3 90 WATTS - TO-66

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage APPLICATIONS • For medium-speed switching and amplifier applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage APPLICATIONS • For medium-speed switching and amplifier applications

SAVANTIC

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS designed for general-purpose power amplifier and switching applications. ● Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 5.0 Adc ● Low Leakage Current - ICEX = 0.5 mAdc (Max) @ Rated Voltage ● Excellent DC Cu

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5877 2N5878 APPLICATIONS • For general-purpose power amplifier and switching applications

SAVANTIC

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

POWER TRANSISTORS(10A,150W)

2N5875(PNP) 2N5876(PNP) 2N5877(NPN) 2N5878(NPN)

MOSPEC

统懋

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5877 2N5878 APPLICATIONS • For general-purpose power amplifier and switching applications

ISC

无锡固电

POWER TRANSISTORS(10A,150W)

2N5875(PNP) 2N5876(PNP) 2N5877(NPN) 2N5878(NPN)

MOSPEC

统懋

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5877 2N5878 APPLICATIONS • For general-purpose power amplifier and switching applications

ISC

无锡固电

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS designed for general-purpose power amplifier and switching applications. ● Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 5.0 Adc ● Low Leakage Current - ICEX = 0.5 mAdc (Max) @ Rated Voltage ● Excellent DC Cu

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5877 2N5878 APPLICATIONS • For general-purpose power amplifier and switching applications

SAVANTIC

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS designed for general-purpose power amplifier and switching applications. ● Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 5.0 Adc ● Low Leakage Current - ICEX = 0.5 mAdc (Max) @ Rated Voltage ● Excellent DC Cu

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

POWER TRANSISTORS(10A,150W)

2N5875(PNP) 2N5876(PNP) 2N5877(NPN) 2N5878(NPN)

MOSPEC

统懋

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

POWER TRANSISTORS(10A,150W)

2N5875(PNP) 2N5876(PNP) 2N5877(NPN) 2N5878(NPN)

MOSPEC

统懋

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS designed for general-purpose power amplifier and switching applications. ● Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 5.0 Adc ● Low Leakage Current - ICEX = 0.5 mAdc (Max) @ Rated Voltage ● Excellent DC Cu

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SI NPN POWER BJT

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS designed for general-purpose power amplifier and switching applications. ● Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 5.0 Adc ● Low Leakage Current - ICEX = 0.5 mAdc (Max) @ Rated Voltage ● Excellent DC Cu

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS designed for general-purpose power amplifier and switching applications. ● Collector-Emitter Sustaining Voltage - VCEO(sus) = 60 Vdc(Min) - 2N5879, 2N5881 = 60 Vdc(Min) - 2N5880, 2N5882 ● DC Current Gain - hFE = 20

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

General-Purpose Power Amplifier and Switching Applications FEATURES: * Low Collector-Emitter Saturation Voltage - VCE(SAT) = 1.0V(Max.) @ IC = 7.0A * Execllent DC Current Gain - hFE = 10 ~ 100 @ IC = 6.0 A

BOCA

博卡

POWER TRANSISTORS(15A,160W)

General-Purpose Power Amplifier and Switching Applications FEATURES: * Low Collector-Emitter Saturation Voltage - VCE(SAT) = 1.0V(Max.) @ IC = 7.0A * Execllent DC Current Gain - hFE = 10 ~ 100 @ IC = 6.0 A

MOSPEC

统懋

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5881 2N5882 APPLICATIONS • For general-purpose power amplifier and switching applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5881 2N5882 APPLICATIONS • For general-purpose power amplifier and switching applications

SAVANTIC

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

文件:11.28 Kbytes Page:1 Pages

SEME-LAB

Bipolar PNP Device in a Hermetically sealed TO3 Metal Package

文件:11.29 Kbytes Page:1 Pages

SEME-LAB

Silicon PNP Power Transistors

文件:112.45 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Power Transistors

文件:112.45 Kbytes Page:3 Pages

SAVANTIC

Bipolar PNP Device in a Hermetically sealed TO3 Metal Package

文件:12.14 Kbytes Page:1 Pages

SEME-LAB

包装:散装 描述:PNP POWER TRANSISTOR SILICON AMP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

Bipolar Junction Transistors

TTELEC

Trans GP BJT NPN 60V 7A 3-Pin(2+Tab) TO-3

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

包装:卷带(TR) 描述:PNP POWER TRANSISTOR SILICON AMP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

文件:11.28 Kbytes Page:1 Pages

SEME-LAB

Silicon NPN Power Transistors

文件:112.6 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:112.6 Kbytes Page:3 Pages

SAVANTIC

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.

文件:12.13 Kbytes Page:1 Pages

SEME-LAB

Trans GP BJT NPN 80V 7A 3-Pin(2+Tab) TO-3

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Bipolar PNP Device in a Hermetically sealed TO3

文件:15.52 Kbytes Page:1 Pages

SEME-LAB

Silicon PNP Power Transistors

文件:114.51 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Power Transistors

文件:114.51 Kbytes Page:3 Pages

SAVANTIC

HIGH POWER SILICON PNP/NPN TRANSISTORS

文件:187.29 Kbytes Page:3 Pages

TTELEC

Bipolar PNP Device in a Hermetically sealed TO3

文件:15.52 Kbytes Page:1 Pages

SEME-LAB

2N587产品属性

  • 类型

    描述

  • Maximum Power Dissipation:

    115000mW

  • Maximum DC Collector Current:

    7A

  • Maximum Collector Emitter Voltage:

    60V

  • Maximum Collector Emitter Saturation Voltage:

    1@0.4mA@2.5mAV

  • Configuration:

    Single

  • Category:

    Bipolar Power

更新时间:2026-8-3 8:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI
25+
TO-3
20948
样件支持,可原厂排单订货!
ON/安森美
25+
N/A
20000
只做原装,只有原装。
TI
25+
TO-3
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
MOT
24+
TO-3
10000
MOTOROLA/摩托罗拉
23+
TO-3
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
ON/安森美
23+
TO-3
50000
全新原装正品现货,支持订货
MICROSEMI
25+
SMD
96
就找我吧!--邀您体验愉快问购元件!

2N587数据表相关新闻