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2N587晶体管资料

2N587别名：2N587三极管、2N587晶体管、2N587晶体三极管
2N587生产厂家：CSR_美国电子晶体管公司_IDI
2N587制作材料：Ge-NPN
2N587性质：低频或音频放大（LF）_开关管（S）
2N587封装形式：直插封装
2N587极限工作电压：40V
2N587最大电流允许值：0.2A
2N587最大工作频率：<1MHZ或未知
2N587引脚数：3
2N587最大耗散功率：0.15W
2N587放大倍数：
2N587图片代号：C-65
2N587vtest：40
2N587htest：999900
2N587atest：0.2
2N587wtest：0.15

2N587代换 2N587用什么型号代替：AC176,AC187,AC194,2N1302,3BX31C,

2N587价格

参考价格：￥0.0000

型号：2N5875 品牌：Semiconductors 备注：这里有2N587多少钱，2025年最近7天走势，今日出价，今日竞价，2N587批发/采购报价，2N587行情走势销售排行榜，2N587报价。

型号	功能描述	生产厂家企业	LOGO
2N5870	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage APPLICATIONS • For medium-speed switching and amplifier applications	ISC 无锡固电	ISC
2N5870	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage APPLICATIONS • For medium-speed switching and amplifier applications	SAVANTIC	SAVANTIC
2N5871	Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage APPLICATIONS • For medium-speed switching and amplifier applications	SAVANTIC	SAVANTIC
2N5871	Silicon PNP Power Transistors Description · With TO-3 package · Low collector saturation voltage APPLICATIONS · For medium-speed switching and amplifier applications	ISC 无锡固电	ISC
2N5871	COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMAPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 115 WATTS - TO-3 90 WATTS - TO-66	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N5871	Power Transistors Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N5872	Power Transistors Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N5872	Silicon PNP Power Transistors Description · With TO-3 package · Low collector saturation voltage APPLICATIONS · For medium-speed switching and amplifier applications	ISC 无锡固电	ISC
2N5872	COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMAPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 115 WATTS - TO-3 90 WATTS - TO-66	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N5872	Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage APPLICATIONS • For medium-speed switching and amplifier applications	SAVANTIC	SAVANTIC
2N5873	COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMAPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 115 WATTS - TO-3 90 WATTS - TO-66	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N5873	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage APPLICATIONS • For medium-speed switching and amplifier applications	SAVANTIC	SAVANTIC
2N5873	Power Transistors Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N5873	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage APPLICATIONS • For medium-speed switching and amplifier applications	ISC 无锡固电	ISC
2N5874	Power Transistors Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N5874	COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMAPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 115 WATTS - TO-3 90 WATTS - TO-66	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N5874	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage APPLICATIONS • For medium-speed switching and amplifier applications	ISC 无锡固电	ISC
2N5874	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage APPLICATIONS • For medium-speed switching and amplifier applications	SAVANTIC	SAVANTIC
2N5875	COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS ... designed for general-purpose power amplifier and switching applications. ● Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 5.0 Adc ● Low Leakage Current - ICEX = 0.5 mAdc (Max) @ Rated Voltage ● Excellent DC Cu	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N5875	Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5877 2N5878 APPLICATIONS • For general-purpose power amplifier and switching applications	SAVANTIC	SAVANTIC
2N5875	Power Transistors Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N5875	POWER TRANSISTORS(10A,150W) 2N5875(PNP) 2N5876(PNP) 2N5877(NPN) 2N5878(NPN)	MOSPEC 统懋	MOSPEC
2N5875	Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5877 2N5878 APPLICATIONS • For general-purpose power amplifier and switching applications	ISC 无锡固电	ISC
2N5876	POWER TRANSISTORS(10A,150W) 2N5875(PNP) 2N5876(PNP) 2N5877(NPN) 2N5878(NPN)	MOSPEC 统懋	MOSPEC
2N5876	Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5877 2N5878 APPLICATIONS • For general-purpose power amplifier and switching applications	ISC 无锡固电	ISC
2N5876	Power Transistors Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N5876	COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS ... designed for general-purpose power amplifier and switching applications. ● Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 5.0 Adc ● Low Leakage Current - ICEX = 0.5 mAdc (Max) @ Rated Voltage ● Excellent DC Cu	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N5876	Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5877 2N5878 APPLICATIONS • For general-purpose power amplifier and switching applications	SAVANTIC	SAVANTIC
2N5877	COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS ... designed for general-purpose power amplifier and switching applications. ● Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 5.0 Adc ● Low Leakage Current - ICEX = 0.5 mAdc (Max) @ Rated Voltage ● Excellent DC Cu	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N5877	POWER TRANSISTORS(10A,150W) 2N5875(PNP) 2N5876(PNP) 2N5877(NPN) 2N5878(NPN)	MOSPEC 统懋	MOSPEC
2N5877	Power Transistors Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N5878	Power Transistors Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N5878	POWER TRANSISTORS(10A,150W) 2N5875(PNP) 2N5876(PNP) 2N5877(NPN) 2N5878(NPN)	MOSPEC 统懋	MOSPEC
2N5878	COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS ... designed for general-purpose power amplifier and switching applications. ● Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 5.0 Adc ● Low Leakage Current - ICEX = 0.5 mAdc (Max) @ Rated Voltage ● Excellent DC Cu	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N5878	SI NPN POWER BJT COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS ... designed for general-purpose power amplifier and switching applications. ● Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 5.0 Adc ● Low Leakage Current - ICEX = 0.5 mAdc (Max) @ Rated Voltage ● Excellent DC Cu	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N5879	COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS ... designed for general-purpose power amplifier and switching applications. ● Collector-Emitter Sustaining Voltage - VCEO(sus) = 60 Vdc(Min) - 2N5879, 2N5881 = 60 Vdc(Min) - 2N5880, 2N5882 ● DC Current Gain - hFE = 20	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2N5879	COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS General-Purpose Power Amplifier and Switching Applications FEATURES: * Low Collector-Emitter Saturation Voltage - VCE(SAT) = 1.0V(Max.) @ IC = 7.0A * Execllent DC Current Gain - hFE = 10 ~ 100 @ IC = 6.0 A	boca 博卡	boca
2N5879	POWER TRANSISTORS(15A,160W) General-Purpose Power Amplifier and Switching Applications FEATURES: * Low Collector-Emitter Saturation Voltage - VCE(SAT) = 1.0V(Max.) @ IC = 7.0A * Execllent DC Current Gain - hFE = 10 ~ 100 @ IC = 6.0 A	MOSPEC 统懋	MOSPEC
2N5879	Power Transistors Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2N5879	Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5881 2N5882 APPLICATIONS • For general-purpose power amplifier and switching applications	ISC 无锡固电	ISC
2N5879	Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5881 2N5882 APPLICATIONS • For general-purpose power amplifier and switching applications	SAVANTIC	SAVANTIC
2N5870	Bipolar NPN Device in a Hermetically sealed TO3 Metal Package 文件：11.28 Kbytes Page：1 Pages	SEME-LAB	SEME-LAB
2N5871	Bipolar PNP Device in a Hermetically sealed TO3 Metal Package 文件：11.29 Kbytes Page：1 Pages	SEME-LAB	SEME-LAB
2N5871	Silicon PNP Power Transistors 文件：112.45 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2N5872	Silicon PNP Power Transistors 文件：112.45 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2N5872	Bipolar PNP Device in a Hermetically sealed TO3 Metal Package 文件：12.14 Kbytes Page：1 Pages	SEME-LAB	SEME-LAB
2N5872	包装：散装描述：PNP POWER TRANSISTOR SILICON AMP 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	Microchip 微芯科技	Microchip
2N5872	Bipolar Junction Transistors	TTELEC	TTELEC
2N5873	Trans GP BJT NPN 60V 7A 3-Pin(2+Tab) TO-3	ETC 知名厂家	ETC
2N5873	包装：卷带（TR）描述：PNP POWER TRANSISTOR SILICON AMP 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	Microchip 微芯科技	Microchip
2N5873	Bipolar NPN Device in a Hermetically sealed TO3 Metal Package 文件：11.28 Kbytes Page：1 Pages	SEME-LAB	SEME-LAB
2N5873	Silicon NPN Power Transistors 文件：112.6 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2N5874	Silicon NPN Power Transistors 文件：112.6 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2N5874	Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 文件：12.13 Kbytes Page：1 Pages	SEME-LAB	SEME-LAB
2N5874	Trans GP BJT NPN 80V 7A 3-Pin(2+Tab) TO-3	ETC 知名厂家	ETC
2N5875	Bipolar PNP Device in a Hermetically sealed TO3 文件：15.52 Kbytes Page：1 Pages	SEME-LAB	SEME-LAB
2N5875	Silicon PNP Power Transistors 文件：114.51 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2N5876	Silicon PNP Power Transistors 文件：114.51 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2N5876	HIGH POWER SILICON PNP/NPN TRANSISTORS 文件：187.29 Kbytes Page：3 Pages	TTELEC	TTELEC
2N5876	Bipolar PNP Device in a Hermetically sealed TO3 文件：15.52 Kbytes Page：1 Pages	SEME-LAB	SEME-LAB

2N587产品属性

类型
描述
型号
2N587
功能描述
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-5

2N587供应商更多...

更新时间：2025-12-25 14:09:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市华来深电子有限公司	2N5882	MOT	23+	TO-3	8650	受权代理!全新原装现货特价热卖!	询价
深圳市威雅利发展有限公司	2N5882	MOT	8639+/8821+	TO-3	300	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市昊创电子有限公司	2N588	MOTOROLA	专业铁帽	CAN3	1000	原装铁帽专营,代理渠道量大可订货	询价
深圳市科恒伟业电子有限公司	2N5881	MOTOROLA/摩托罗拉	2450+	TO-2	6540	原装现货或订发货1-2周	询价
标准国际(香港)有限公司	2N5881	2N5881	25+	73	73		询价
深圳市弘为电子有限公司	2N587A	MOTOROLA	24+	CAN3	1200	原装现货假一罚十	询价
贸泽芯城（深圳）电子科技有限公司	2N5879	MOTOROLA/摩托罗拉	23+	TO-3	5000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市得捷芯城科技有限公司	2N5879	ON/安森美	24+	NA/	21	优势代理渠道,原装正品,可全系列订货开增值税票	询价
中天科工半导体（深圳）有限公司	2N588	MOTOROLA/摩托罗拉	专业铁帽	CAN3	67500	铁帽原装主营-可开原型号增税票	询价
现代芯城（深圳）科技有限公司	2N5881		24+	N/A	47000	一级代理-主营优势-实惠价格-不悔选择	询价

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2N587晶体管资料

2N587价格

2N587产品属性

2N587供应商更多...

2N587芯片相关品牌

2N587规格书下载地址

2N587参数引脚图相关

2N587数据表相关新闻

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2N6043G

2N5245

DdatasheetPDF页码索引