COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

... designed for general-purpose power amplifier and switching applications.

● Low Collector-Emitter Saturation Voltage -

VCE(sat) = 1.0 Vdc (Max) @ IC = 5.0 Adc

● Low Leakage Current -

ICEX = 0.5 mAdc (Max) @ Rated Voltage

● Excellent DC Current Gain -

hFE = 20 (Min) @ IC = 4.0 Adc

● High Current Gain - Bandwidth Product -

fT = 4.0 MHz (Min) @ IC = 0.5 A