2N578晶体管资料
2N578别名：2N578三极管、2N578晶体管、2N578晶体三极管
2N578生产厂家：CSR_美国锗功率器件公司_IDI
2N578制作材料：Ge-PNP
2N578性质：低频或音频放大 （LF）_开关管 （S）
2N578封装形式：直插封装
2N578极限工作电压：20V
2N578最大电流允许值：0.4A
2N578最大工作频率：5MHZ
2N578引脚数：3
2N578最大耗散功率：0.12W
2N578放大倍数：
2N578图片代号：D-9
2N578vtest：20
2N578htest：5000000
- 2N578atest：0.4
2N578wtest：0.12
2N578代换 2N578用什么型号代替：ASY26,ASY27,ASY76,ASY77,2N1303,3AK34A,
2N578价格
参考价格：￥12.7339
型号：2N5785 品牌：Centralr 备注：这里有2N578多少钱，2026年最近7天走势，今日出价，今日竞价，2N578批发/采购报价，2N578行情走势销售排行榜，2N578报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SILICON TRANSISTORS Silicon Transistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 |   | ||
SI PNP POWER BJT Silicon N-P-N and P-N-P Epitaxial-Base Complementary-Symmetry Transistors General-Purpose Types for Switching and Linear-Amplifier Applications Features: ■ Low saturation voltages ■ Maximum safe-area-of-operation curves ■ High gain at high current ■ High breakdown voltages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Small Signal Transistors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4928 series types are PNP Silicon Transistors designed for general purpose applications. | CENTRAL | | ||
Small Signal Transistors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4928 series types are PNP Silicon Transistors designed for general purpose applications. | CENTRAL | | ||
Small Signal Transistors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4928 series types are PNP Silicon Transistors designed for general purpose applications. | CENTRAL | | ||
SI PNP POWER BJT Silicon N-P-N and P-N-P Epitaxial-Base Complementary-Symmetry Transistors General-Purpose Types for Switching and Linear-Amplifier Applications Features: ■ Low saturation voltages ■ Maximum safe-area-of-operation curves ■ High gain at high current ■ High breakdown voltages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SI NPN POWER BJT Silicon N-P-N and P-N-P Epitaxial-Base Complementary-Symmetry Transistors General-Purpose Types for Switching and Linear-Amplifier Applications Features: ■ Low saturation voltages ■ Maximum safe-area-of-operation curves ■ High gain at high current ■ High breakdown voltages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Small Signal Transistors
| CENTRAL | | ||
NPN TO-39/TO-5 NPN TO-39/TO-5 Case 801 I(MAX) = 0.05 to 10 A VCEO(sus) = 40 • 800V fT = 1 to 50 MHz | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Small Signal Transistors
| CENTRAL | | ||
NPN TO-39/TO-5 NPN TO-39/TO-5 Case 801 I(MAX) = 0.05 to 10 A VCEO(sus) = 40 • 800V fT = 1 to 50 MHz | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN TO-39/TO-5 NPN TO-39/TO-5 Case 801 I(MAX) = 0.05 to 10 A VCEO(sus) = 40 • 800V fT = 1 to 50 MHz | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Small Signal Transistors
| CENTRAL | | ||
SILICON EPITAXIAL NPN TRANSISTOR FEATURES General purpose power transistor for switching and linear applications in a hermetic TO–39 package. | SEME-LAB | | ||
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package 文件：11.96 Kbytes Page：1 Pages | SEME-LAB | | ||
Silicon N-P-N and P-N-P Epitaxial-Base Complementary-Symmetry Transistors 文件：145.59 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS 文件：498.97 Kbytes Page：2 Pages | CENTRAL | | ||
SILICON EPITAXIAL PNP TRANSISTOR 文件：37.23 Kbytes Page：2 Pages | SEME-LAB | | ||
Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch | CENTRAL | | ||
Bipolar Junction Transistors | TTELEC | | ||
SILICON EPITAXIAL PNP TRANSISTOR 文件：37.23 Kbytes Page：2 Pages | SEME-LAB | | ||
Silicon N-P-N and P-N-P Epitaxial-Base Complementary-Symmetry Transistors 文件：145.59 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Bipolar PNP Device in a Hermetically sealed TO5 文件：15.25 Kbytes Page：1 Pages | SEME-LAB | | ||
Bipolar Junction Transistors | TTELEC | | ||
包装：散装 描述：NPN TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | MICROCHIP 微芯科技 | | ||
Bipolar PNP Device in a Hermetically sealed TO39 文件：15.36 Kbytes Page：1 Pages | SEME-LAB | | ||
Silicon N-P-N and P-N-P Epitaxial-Base Complementary-Symmetry Transistors 文件：145.59 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Bipolar PNP Device in a Hermetically sealed TO5 文件：15.25 Kbytes Page：1 Pages | SEME-LAB | | ||
Bipolar PNP Device in a Hermetically sealed TO39 文件：16.16 Kbytes Page：1 Pages | SEME-LAB | | ||
Silicon N-P-N and P-N-P Epitaxial-Base Complementary-Symmetry Transistors 文件：145.59 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
COMPLEMENTATY SILICON POWER TRANSIS0R 文件：89.97 Kbytes Page：2 Pages | CENTRAL | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS 文件：499.13 Kbytes Page：2 Pages | CENTRAL | | ||
包装：散装 描述：NPN TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | MICROCHIP 微芯科技 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS 文件：499.13 Kbytes Page：2 Pages | CENTRAL | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS 文件：498.97 Kbytes Page：2 Pages | CENTRAL | | ||
Silicon N-P-N and P-N-P Epitaxial-Base Complementary-Symmetry Transistors 文件：145.59 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SILICON EPITAXIAL NPN TRANSISTOR 文件：18.6 Kbytes Page：2 Pages | SEME-LAB | | ||
SILICON EPITAXIAL NPN TRANSISTOR 文件：42.95 Kbytes Page：2 Pages | SEME-LAB | | ||
SILICON EPITAXIAL NPN TRANSISTOR 文件：42.95 Kbytes Page：2 Pages | SEME-LAB | | ||
Bipolar NPN Device in a Hermetically sealed 文件：14.66 Kbytes Page：1 Pages | SEME-LAB | | ||
Bipolar NPN Device in a Hermetically sealed 文件：15.41 Kbytes Page：1 Pages | SEME-LAB | | ||
Bipolar NPN Device 文件：11.96 Kbytes Page：1 Pages | SEME-LAB | | ||
Silicon N-P-N and P-N-P Epitaxial-Base Complementary-Symmetry Transistors 文件：145.59 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Bipolar NPN Device in a Hermetically sealed 文件：14.67 Kbytes Page：1 Pages | SEME-LAB | | ||
Bipolar NPN Device in a Hermetically sealed 文件：15.41 Kbytes Page：1 Pages | SEME-LAB | | ||
Silicon N-P-N and P-N-P Epitaxial-Base Complementary-Symmetry Transistors 文件：145.59 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS 文件：499.13 Kbytes Page：2 Pages | CENTRAL | | ||
SILICON EPITAXIAL NPN TRANSISTOR 文件：42.44 Kbytes Page：2 Pages | SEME-LAB | | ||
SILICON EPITAXIAL NPN TRANSISTOR 文件：42.44 Kbytes Page：2 Pages | SEME-LAB | |
2N578产品属性
- 类型
描述
- Maximum Transition Frequency：
60MHz
- Maximum Power Dissipation：
10000mW
- Maximum Operating Temperature：
200°C
- Maximum Emitter Base Voltage：
5V
- Maximum DC Collector Current：
3.5A
- Maximum Collector Emitter Voltage：
65V
- Maximum Collector Emitter Saturation Voltage：
0.5@100mA@1AV
- Maximum Collector Base Voltage：
80V
- Material：
Si
- Configuration：
Single
- Category：
Bipolar Power
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA/摩托罗拉 |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
原厂 |
2540+ |
CAN3 |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
MOT |
24+ |
CAN3 |
4326 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
N/A |
23+ |
NA |
1126 |
专做原装正品,假一罚百! |
|||
24+ |
CAN |
7000 |
|||||
MOTOROLA |
专业铁帽 |
CAN3 |
1500 |
原装铁帽专营,代理渠道量大可订货 |
|||
MOT |
2023+ |
CAN |
50000 |
全新原装现货 |
|||
MOTOROLA |
24+ |
CAN3 |
1500 |
原装现货假一罚十 |
|||
OPTEK |
23+ |
SURFACEMOUNT |
10000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
MICROSEMI |
25+ |
SMD |
326 |
就找我吧!--邀您体验愉快问购元件! |
2N578规格书下载地址
2N578参数引脚图相关
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2N578数据表相关新闻
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2024-9-192N5192G原包原标原装现货
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2023-5-112N60G-TO220FT-A-TG_UTC代理商
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2N5401L-SOT89R-B-TG_UTC代理商
2023-2-102N6043G
原装代理
2022-7-232N5245
2N5245，当天发货0755-82732291全新原装现货或门市自取.
2020-8-5
DdatasheetPDF页码索引
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