NPN TO-39/TO-5

NPN TO-39/TO-5 Case 801 I(MAX) = 0.05 to 10 A VCEO(sus) = 40 • 800V fT = 1 to 50 MHz

SI NPN POWER BJT

Silicon N-P-N and P-N-P Epitaxial-Base Complementary-Symmetry Transistors General-Purpose Types for Switching and Linear-Amplifier Applications Features: ■ Low saturation voltages ■ Maximum safe-area-of-operation curves ■ High gain at high current ■ High breakdown voltages

Small Signal Transistors

COMPLEMENTARY SILICON POWER TRANSISTORS

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SILICON EPITAXIAL NPN TRANSISTOR

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Silicon N-P-N and P-N-P Epitaxial-Base Complementary-Symmetry Transistors

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SILICON EPITAXIAL NPN TRANSISTOR

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封装/外壳：TO-205AD，TO-39-3 金属罐 包装：散装 描述：2N5784 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

包装：散装 描述：NPN TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Bipolar Junction Transistors

SILICON EPITAXIAL NPN TRANSISTOR

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Bipolar NPN Device in a Hermetically sealed

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Bipolar NPN Device in a Hermetically sealed

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