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2N563晶体管资料

  • 2N563别名:2N563三极管、2N563晶体管、2N563晶体三极管

  • 2N563生产厂家:CSR_美国电子晶体管公司

  • 2N563制作材料:Ge-PNP

  • 2N563性质:低频或音频放大 (LF)_开关管 (S)

  • 2N563封装形式:直插封装

  • 2N563极限工作电压:30V

  • 2N563最大电流允许值:0.3A

  • 2N563最大工作频率:<1MHZ或未知

  • 2N563引脚数:3

  • 2N563最大耗散功率:0.15W

  • 2N563放大倍数:β=25

  • 2N563图片代号:C-37

  • 2N563vtest:30

  • 2N563htest:999900

  • 2N563atest:0.3

  • 2N563wtest:0.15

  • 2N563代换 2N563用什么型号代替:AC128,AC152,AC153,AC188,AC193,2N1190,3AX85C,

2N563价格

参考价格:¥294.1852

型号:2N5635 品牌:Motorola 备注:这里有2N563多少钱,2026年最近7天走势,今日出价,今日竞价,2N563批发/采购报价,2N563行情走势销售排行榜,2N563报价。
型号 功能描述 生产厂家 企业 LOGO 操作

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5629, 2N6029 series devices are complementary silicon power transistors, manufactured by the epitaxial base process, designed for high voltage and high power amplifier applications.

CENTRAL

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

POWER TRANSISTORS COMPLEMENTARY SILICON

HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100-120-140 VOLTS 200 WATTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

POWER TRANSISTORS COMPLEMENTARY SILICON

HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100-120-140 VOLTS 200 WATTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N6031 • High collector-emitter sustaining voltage • High DC current gain@IC=8A • Low collector-emitter saturation voltage APPLICATIONS • For high power audio amplifier and high voltage switching regulator circuits applications

SAVANTIC

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N6031 • High collector-emitter sustaining voltage • High DC current gain@IC=8A • Low collector-emitter saturation voltage APPLICATIONS • For high power audio amplifier and high voltage switching regulator circuits applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N6031 • High collector-emitter sustaining voltage • High DC current gain • Low collector-emitter saturation voltage APPLICATIONS • For high power audio amplifier and high voltage switching regulator circuits applications

JMNIC

锦美电子

POWER TRANSISTORS COMPLEMENTARY SILICON

High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage – VCEO(sus) = 140 Vdc • High DC Current Gain – @ IC = 8.0 Adc hFE = 15 (Min) • Low Collector–Emitte

ONSEMI

安森美半导体

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Low collector-emitter saturation voltage APPLICATIONS ·For general-purpose power amplifier and switching applications

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For general-purpose power amplifier and switching applications

ISC

无锡固电

COLLECTOR CURRENT = 10 AMPS NPN TYPES

[API ELECTRONICS, INC.] COLLECTOR CURRENT = 10 AMPS NPN TYPES

ETCList of Unclassifed Manufacturers

未分类制造商

SILICON POWER TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5632, 2N6229 series types are complementary silicon power transistors manufactured by the epitaxial base process mounted in a hermetically sealed metal case designed for high power amplifier and switching applications where high voltages are required.

CENTRAL

COMPLEMENTARY SILICON POWER TRANSISTORS

HIGH VOLTAGE HIGH POWER SILICON TRANSISTORS 10 AMPERE COMPLMEMTARY SILICON POWER TRANSISTORS 100-120-140 VOLTS 150 WATTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For general-purpose power amplifier and switching applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For general-purpose power amplifier and switching applications

SAVANTIC

HIGH VOLTAGE-HIGH-POWER

HIGH VOLTAGE HIGH POWER SILICON TRANSISTORS 10 AMPERE COMPLMEMTARY SILICON POWER TRANSISTORS 100-120-140 VOLTS 150 WATTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Low collector-emitter saturation voltage APPLICATIONS ·For general-purpose power amplifier and switching applications

JMNIC

锦美电子

SILICON POWER TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5632, 2N6229 series types are complementary silicon power transistors manufactured by the epitaxial base process mounted in a hermetically sealed metal case designed for high power amplifier and switching applications where high voltages are required.

CENTRAL

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For general-purpose power amplifier and switching applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Low collector-emitter saturation voltage APPLICATIONS ·For general-purpose power amplifier and switching applications

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For general-purpose power amplifier and switching applications

ISC

无锡固电

SILICON POWER TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5632, 2N6229 series types are complementary silicon power transistors manufactured by the epitaxial base process mounted in a hermetically sealed metal case designed for high power amplifier and switching applications where high voltages are required.

CENTRAL

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For general-purpose power amplifier and switching applications

SAVANTIC

BIPOLAR NPN UHF/MICROWAVE TRANSISTOR

Description: Bipolar NPN UHF/Microwave Transistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

COLLECTOR CURRENT = 10 AMPS NPN TYPES

[API ELECTRONICS, INC.] COLLECTOR CURRENT = 10 AMPS NPN TYPES

ETCList of Unclassifed Manufacturers

未分类制造商

BIPOLAR NPN UHF/MICROWAVE TRANSISTOR

Description: Bipolar NPN UHF/Microwave Transistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BIPOLAR NPN UHF/MICROWAVE TRANSISTOR

Description: Bipolar NPN UHF/Microwave Transistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-CHANNEL JFET

Description: N-Channel JFET

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

INTERSIL

N-Channel Switch

N-Channel Switch • This device is designed for low level analog switchng, sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 51.

FAIRCHILD

仙童半导体

JFET Chopper Transistors

JFET Chopper Transistors N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode (Type A) designed for chopper and high−speed switching applications. Features • Low Drain−Source “ON” Resistance: RDS(on) = 30 for 2N5638 RDS(on) = 60 for 2N5639 • Low Reverse Tr

ONSEMI

安森美半导体

JFET Chopper Transistors

JFET Chopper Transistors N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode (Type A) designed for chopper and high−speed switching applications. Features • Low Drain−Source “ON” Resistance: RDS(on) = 30 for 2N5638 RDS(on) = 60 for 2N5639 • Low Reverse Tr

ONSEMI

安森美半导体

N-Channel Switch

N-Channel Switch • This device is designed for low level analog switchng, sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 51.

FAIRCHILD

仙童半导体

JFET Chopper Transistors

JFET Chopper Transistors N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode (Type A) designed for chopper and high−speed switching applications. Features • Low Drain−Source “ON” Resistance: RDS(on) = 30 for 2N5638 RDS(on) = 60 for 2N5639 • Low Reverse Tr

ONSEMI

安森美半导体

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

INTERSIL

N-Channel JFETs

[TAITRON] P-Channel Power MOSFETs N-Channel JFETs N-Channel Metal Can JFETs

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistors

文件:131.38 Kbytes Page:3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

文件:123.66 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

文件:114.14 Kbytes Page:3 Pages

SAVANTIC

Bipolar NPN Device

文件:11.29 Kbytes Page:1 Pages

SEME-LAB

Silicon NPN Power Transistors

文件:112.56 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:105.1 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

文件:113.82 Kbytes Page:3 Pages

SAVANTIC

封装/外壳:TO-204AA,TO-3 包装:散装 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

Silicon NPN Power Transistors

文件:105.1 Kbytes Page:3 Pages

JMNIC

锦美电子

High-Voltage - High Power Transistors

ONSEMI

安森美半导体

封装/外壳:TO-204AA,TO-3 包装:散装 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

Trans GP BJT NPN 100V 10A 3-Pin(2+Tab) TO-3 Sleeve

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

文件:11.3 Kbytes Page:1 Pages

SEME-LAB

Silicon NPN Power Transistors

文件:113.37 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:109 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

文件:109 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

文件:113.37 Kbytes Page:3 Pages

SAVANTIC

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

文件:11.29 Kbytes Page:1 Pages

SEME-LAB

Bipolar NPN Device

文件:11.29 Kbytes Page:1 Pages

SEME-LAB

Trans GP BJT NPN 140V 15A 3-Pin(2+Tab) TO-3

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

文件:113.37 Kbytes Page:3 Pages

SAVANTIC

JFET Chopper Transistors N-Channel - Depletion

文件:51.73 Kbytes Page:3 Pages

ONSEMI

安森美半导体

JFET Chopper Transistors N-Channel - Depletion

文件:51.73 Kbytes Page:3 Pages

ONSEMI

安森美半导体

2N563产品属性

  • 类型

    描述

  • VCBO(V):

    140

  • VCEO(V):

    140

  • PD(W):

    200

  • PACKAGE:

    TO-3

  • NPN:

    2N5631

  • PNP:

    2N6031

  • HFE(Min/Max):

    15/60

  • IC/VCE(A/V):

    8.0/2.0

  • VCE(SAT)(V):

    1.0

  • IC / IB(A/mA):

    10/1A

更新时间:2026-5-16 18:29:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON Semiconductor
25+
TO-92
800000
只做原厂原装正品
FSC
2450+
TO92
9850
只做原装正品现货或订货假一赔十!
FSC
24+
TO-92
53950
GS
25+23+
TO-93
51707
绝对原装正品现货,全新深圳原装进口现货
GS
26+
TO-93
86910
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
FSC
22+
TO92
20000
公司只有原装 品质保证
GS
2447
TO-93
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ON
23+
TO-92
6107
专注配单,只做原装进口现货
GS
3
TO-93
733
原装正品
原厂
25+
428
百分百原装正品 真实公司现货库存 本公司只做原装 可

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