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2N563晶体管资料
2N563别名：2N563三极管、2N563晶体管、2N563晶体三极管
2N563生产厂家：CSR_美国电子晶体管公司
2N563制作材料：Ge-PNP
2N563性质：低频或音频放大 （LF）_开关管 （S）
2N563封装形式：直插封装
2N563极限工作电压：30V
2N563最大电流允许值：0.3A
2N563最大工作频率：<1MHZ或未知
2N563引脚数：3
2N563最大耗散功率：0.15W
2N563放大倍数：β=25
2N563图片代号：C-37
2N563vtest：30
2N563htest：999900
- 2N563atest：0.3
2N563wtest：0.15
2N563代换 2N563用什么型号代替：AC128,AC152,AC153,AC188,AC193,2N1190,3AX85C,
2N563价格
参考价格：￥294.1852
型号：2N5635 品牌：Motorola 备注：这里有2N563多少钱，2025年最近7天走势，今日出价，今日竞价，2N563批发/采购报价，2N563行情走势销售排行榜，2N563报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5629, 2N6029 series devices are complementary silicon power transistors, manufactured by the epitaxial base process, designed for high voltage and high power amplifier applications. | Central |   | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
POWER TRANSISTORS COMPLEMENTARY SILICON HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100-120-140 VOLTS 200 WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N6031 • High collector-emitter sustaining voltage • High DC current gain@IC=8A • Low collector-emitter saturation voltage APPLICATIONS • For high power audio amplifier and high voltage switching regulator circuits applications | ISC 无锡固电 | | ||
POWER TRANSISTORS COMPLEMENTARY SILICON HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100-120-140 VOLTS 200 WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
POWER TRANSISTORS COMPLEMENTARY SILICON High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage – VCEO(sus) = 140 Vdc • High DC Current Gain – @ IC = 8.0 Adc hFE = 15 (Min) • Low Collector–Emitte | ONSEMI 安森美半导体 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N6031 • High collector-emitter sustaining voltage • High DC current gain • Low collector-emitter saturation voltage APPLICATIONS • For high power audio amplifier and high voltage switching regulator circuits applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N6031 • High collector-emitter sustaining voltage • High DC current gain@IC=8A • Low collector-emitter saturation voltage APPLICATIONS • For high power audio amplifier and high voltage switching regulator circuits applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For general-purpose power amplifier and switching applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For general-purpose power amplifier and switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector-emitter saturation voltage APPLICATIONS ·For general-purpose power amplifier and switching applications | JMNIC 锦美电子 | | ||
SILICON POWER TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5632, 2N6229 series types are complementary silicon power transistors manufactured by the epitaxial base process mounted in a hermetically sealed metal case designed for high power amplifier and switching applications where high voltages are required. | Central | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS HIGH VOLTAGE HIGH POWER SILICON TRANSISTORS 10 AMPERE COMPLMEMTARY SILICON POWER TRANSISTORS 100-120-140 VOLTS 150 WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
COLLECTOR CURRENT = 10 AMPS NPN TYPES [API ELECTRONICS, INC.] COLLECTOR CURRENT = 10 AMPS NPN TYPES | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
HIGH VOLTAGE-HIGH-POWER HIGH VOLTAGE HIGH POWER SILICON TRANSISTORS 10 AMPERE COMPLMEMTARY SILICON POWER TRANSISTORS 100-120-140 VOLTS 150 WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector-emitter saturation voltage APPLICATIONS ·For general-purpose power amplifier and switching applications | JMNIC 锦美电子 | | ||
SILICON POWER TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5632, 2N6229 series types are complementary silicon power transistors manufactured by the epitaxial base process mounted in a hermetically sealed metal case designed for high power amplifier and switching applications where high voltages are required. | Central | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For general-purpose power amplifier and switching applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For general-purpose power amplifier and switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For general-purpose power amplifier and switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector-emitter saturation voltage APPLICATIONS ·For general-purpose power amplifier and switching applications | JMNIC 锦美电子 | | ||
SILICON POWER TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5632, 2N6229 series types are complementary silicon power transistors manufactured by the epitaxial base process mounted in a hermetically sealed metal case designed for high power amplifier and switching applications where high voltages are required. | Central | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For general-purpose power amplifier and switching applications | ISC 无锡固电 | | ||
BIPOLAR NPN UHF/MICROWAVE TRANSISTOR Description: Bipolar NPN UHF/Microwave Transistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
COLLECTOR CURRENT = 10 AMPS NPN TYPES [API ELECTRONICS, INC.] COLLECTOR CURRENT = 10 AMPS NPN TYPES | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
BIPOLAR NPN UHF/MICROWAVE TRANSISTOR Description: Bipolar NPN UHF/Microwave Transistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
BIPOLAR NPN UHF/MICROWAVE TRANSISTOR Description: Bipolar NPN UHF/Microwave Transistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
N-CHANNEL JFET Description: N-Channel JFET | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
N-Channel Switch N-Channel Switch • This device is designed for low level analog switchng, sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 51. | Fairchild 仙童半导体 | | ||
P-CHANNEL JFET GENERAL INFORMATION/CROSS REFERENCES | Intersil | | ||
JFET Chopper Transistors JFET Chopper Transistors N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode (Type A) designed for chopper and high−speed switching applications. Features • Low Drain−Source “ON” Resistance: RDS(on) = 30 for 2N5638 RDS(on) = 60 for 2N5639 • Low Reverse Tr | ONSEMI 安森美半导体 | | ||
JFET Chopper Transistors JFET Chopper Transistors N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode (Type A) designed for chopper and high−speed switching applications. Features • Low Drain−Source “ON” Resistance: RDS(on) = 30 for 2N5638 RDS(on) = 60 for 2N5639 • Low Reverse Tr | ONSEMI 安森美半导体 | | ||
N-Channel Switch N-Channel Switch • This device is designed for low level analog switchng, sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 51. | Fairchild 仙童半导体 | | ||
JFET Chopper Transistors JFET Chopper Transistors N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode (Type A) designed for chopper and high−speed switching applications. Features • Low Drain−Source “ON” Resistance: RDS(on) = 30 for 2N5638 RDS(on) = 60 for 2N5639 • Low Reverse Tr | ONSEMI 安森美半导体 | | ||
N-Channel JFETs [TAITRON] P-Channel Power MOSFETs N-Channel JFETs N-Channel Metal Can JFETs | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
P-CHANNEL JFET GENERAL INFORMATION/CROSS REFERENCES | Intersil | | ||
Silicon NPN Power Transistors 文件：131.38 Kbytes Page：3 Pages | ISC 无锡固电 | | ||
Silicon NPN Power Transistors 文件：112.56 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：123.66 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Bipolar NPN Device 文件：11.29 Kbytes Page：1 Pages | SEME-LAB | | ||
Silicon NPN Power Transistors 文件：114.14 Kbytes Page：3 Pages | SAVANTIC | | ||
封装/外壳：TO-204AA，TO-3 包装：散装 描述：POWER BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Microchip 微芯科技 | | ||
Silicon NPN Power Transistors 文件：105.1 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：113.82 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：105.1 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
High-Voltage - High Power Transistors | ONSEMI 安森美半导体 | | ||
Trans GP BJT NPN 100V 10A 3-Pin(2+Tab) TO-3 Sleeve | NJS | | ||
封装/外壳：TO-204AA，TO-3 包装：散装 描述：POWER BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Microchip 微芯科技 | | ||
Silicon NPN Power Transistors 文件：113.37 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：109 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package 文件：11.3 Kbytes Page：1 Pages | SEME-LAB | | ||
Silicon NPN Power Transistors 文件：109 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：113.37 Kbytes Page：3 Pages | SAVANTIC | | ||
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package 文件：11.29 Kbytes Page：1 Pages | SEME-LAB | | ||
Bipolar NPN Device 文件：11.29 Kbytes Page：1 Pages | SEME-LAB | | ||
Silicon NPN Power Transistors 文件：113.37 Kbytes Page：3 Pages | SAVANTIC | | ||
Trans GP BJT NPN 140V 15A 3-Pin(2+Tab) TO-3 | NJS | | ||
JFET Chopper Transistors N-Channel - Depletion 文件：51.73 Kbytes Page：3 Pages | ONSEMI 安森美半导体 | | ||
JFET Chopper Transistors N-Channel - Depletion 文件：51.73 Kbytes Page：3 Pages | ONSEMI 安森美半导体 | |
2N563产品属性
- 类型
描述
- 型号
2N563
- 制造商
Microsemi Corporation
- 功能描述
TRANS GP BJT NPN 120V 16A 3PIN TO-3 - Bulk
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY TRANSISTOR TO-3 NPN 120V 16A 200W BEC
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
NA/ |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RCA |
87+ |
TO-3 |
2 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MOTOROLA/摩托罗拉 |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
MOTOROLA |
24+/25+ |
91 |
原装正品现货库存价优 |
||||
MOTOROLA/摩托罗拉 |
24+ |
275 |
现货供应 |
||||
MOTOROLA/摩托罗拉 |
2450+ |
TO-2 |
6540 |
原装现货或订发货1-2周 |
|||
GS |
25+23+ |
TO-93 |
51707 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
MOT |
24+ |
TO-3 |
10000 |
||||
MOT |
25+ |
11 |
公司优势库存 热卖中! |
||||
MOTOROLA |
专业铁帽 |
CAN3 |
1000 |
原装铁帽专营,代理渠道量大可订货 |
2N563规格书下载地址
2N563参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2N5655G
- 2N5655
- 2N5654
- 2N5653
- 2N5652
- 2N5651
- 2N5650
- 2N565
- 2N5646
- 2N5645
- 2N5644
- 2N5643
- 2N5642
- 2N5641
- 2N5640
- 2N564
- 2N5639G
- 2N5639
- 2N5638
- 2N5637
- 2N5636
- 2N5635
- 2N5634
- 2N5633
- 2N5632
- 2N5631
- 2N5630
- 2N5629
- 2N5628
- 2N5627
- 2N5626
- 2N5625
- 2N5624
- 2N5623
- 2N5622
- 2N5621
- 2N5620
- 2N5619
- 2N5618
- 2N5617
- 2N5616
- 2N5615
- 2N5614
- 2N5613
- 2N5612A
- 2N5612
- 2N5611A
- 2N5611
- 2N5610
2N563数据表相关新闻
2N6027RLRAG坚持只做原装货
2N6027RLRAG坚持只做原装货
2024-9-192N5192G原包原标原装现货
2N5192G原包原标原装现货
2023-5-112N60G-TO220FT-A-TG_UTC代理商
2N60G-TO220FT-A-TG_UTC代理商
2023-3-72N5401L-SOT89R-B-TG_UTC代理商
2N5401L-SOT89R-B-TG_UTC代理商
2023-2-102N6043G
原装代理
2022-7-232N5245
2N5245，当天发货0755-82732291全新原装现货或门市自取.
2020-8-5
DdatasheetPDF页码索引
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