2N563晶体管资料
2N563别名:2N563三极管、2N563晶体管、2N563晶体三极管
2N563生产厂家:CSR_美国电子晶体管公司
2N563制作材料:Ge-PNP
2N563性质:低频或音频放大 (LF)_开关管 (S)
2N563封装形式:直插封装
2N563极限工作电压:30V
2N563最大电流允许值:0.3A
2N563最大工作频率:<1MHZ或未知
2N563引脚数:3
2N563最大耗散功率:0.15W
2N563放大倍数:β=25
2N563图片代号:C-37
2N563vtest:30
2N563htest:999900
- 2N563atest:0.3
2N563wtest:0.15
2N563代换 2N563用什么型号代替:AC128,AC152,AC153,AC188,AC193,2N1190,3AX85C,
2N563价格
参考价格:¥294.1852
型号:2N5635 品牌:Motorola 备注:这里有2N563多少钱,2026年最近7天走势,今日出价,今日竞价,2N563批发/采购报价,2N563行情走势销售排行榜,2N563报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5629, 2N6029 series devices are complementary silicon power transistors, manufactured by the epitaxial base process, designed for high voltage and high power amplifier applications. | CENTRAL | |||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
POWER TRANSISTORS COMPLEMENTARY SILICON HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100-120-140 VOLTS 200 WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
POWER TRANSISTORS COMPLEMENTARY SILICON HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100-120-140 VOLTS 200 WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N6031 • High collector-emitter sustaining voltage • High DC current gain@IC=8A • Low collector-emitter saturation voltage APPLICATIONS • For high power audio amplifier and high voltage switching regulator circuits applications | SAVANTIC | |||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N6031 • High collector-emitter sustaining voltage • High DC current gain@IC=8A • Low collector-emitter saturation voltage APPLICATIONS • For high power audio amplifier and high voltage switching regulator circuits applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N6031 • High collector-emitter sustaining voltage • High DC current gain • Low collector-emitter saturation voltage APPLICATIONS • For high power audio amplifier and high voltage switching regulator circuits applications | JMNIC 锦美电子 | |||
POWER TRANSISTORS COMPLEMENTARY SILICON High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage – VCEO(sus) = 140 Vdc • High DC Current Gain – @ IC = 8.0 Adc hFE = 15 (Min) • Low Collector–Emitte | ONSEMI 安森美半导体 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector-emitter saturation voltage APPLICATIONS ·For general-purpose power amplifier and switching applications | JMNIC 锦美电子 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For general-purpose power amplifier and switching applications | ISC 无锡固电 | |||
COLLECTOR CURRENT = 10 AMPS NPN TYPES [API ELECTRONICS, INC.] COLLECTOR CURRENT = 10 AMPS NPN TYPES | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
SILICON POWER TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5632, 2N6229 series types are complementary silicon power transistors manufactured by the epitaxial base process mounted in a hermetically sealed metal case designed for high power amplifier and switching applications where high voltages are required. | CENTRAL | |||
COMPLEMENTARY SILICON POWER TRANSISTORS HIGH VOLTAGE HIGH POWER SILICON TRANSISTORS 10 AMPERE COMPLMEMTARY SILICON POWER TRANSISTORS 100-120-140 VOLTS 150 WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For general-purpose power amplifier and switching applications | SAVANTIC | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For general-purpose power amplifier and switching applications | SAVANTIC | |||
HIGH VOLTAGE-HIGH-POWER HIGH VOLTAGE HIGH POWER SILICON TRANSISTORS 10 AMPERE COMPLMEMTARY SILICON POWER TRANSISTORS 100-120-140 VOLTS 150 WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector-emitter saturation voltage APPLICATIONS ·For general-purpose power amplifier and switching applications | JMNIC 锦美电子 | |||
SILICON POWER TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5632, 2N6229 series types are complementary silicon power transistors manufactured by the epitaxial base process mounted in a hermetically sealed metal case designed for high power amplifier and switching applications where high voltages are required. | CENTRAL | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For general-purpose power amplifier and switching applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector-emitter saturation voltage APPLICATIONS ·For general-purpose power amplifier and switching applications | JMNIC 锦美电子 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For general-purpose power amplifier and switching applications | ISC 无锡固电 | |||
SILICON POWER TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5632, 2N6229 series types are complementary silicon power transistors manufactured by the epitaxial base process mounted in a hermetically sealed metal case designed for high power amplifier and switching applications where high voltages are required. | CENTRAL | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For general-purpose power amplifier and switching applications | SAVANTIC | |||
BIPOLAR NPN UHF/MICROWAVE TRANSISTOR Description: Bipolar NPN UHF/Microwave Transistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
COLLECTOR CURRENT = 10 AMPS NPN TYPES [API ELECTRONICS, INC.] COLLECTOR CURRENT = 10 AMPS NPN TYPES | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
BIPOLAR NPN UHF/MICROWAVE TRANSISTOR Description: Bipolar NPN UHF/Microwave Transistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
BIPOLAR NPN UHF/MICROWAVE TRANSISTOR Description: Bipolar NPN UHF/Microwave Transistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
N-CHANNEL JFET Description: N-Channel JFET | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
P-CHANNEL JFET GENERAL INFORMATION/CROSS REFERENCES | INTERSIL | |||
N-Channel Switch N-Channel Switch • This device is designed for low level analog switchng, sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 51. | FAIRCHILD 仙童半导体 | |||
JFET Chopper Transistors JFET Chopper Transistors N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode (Type A) designed for chopper and high−speed switching applications. Features • Low Drain−Source “ON” Resistance: RDS(on) = 30 for 2N5638 RDS(on) = 60 for 2N5639 • Low Reverse Tr | ONSEMI 安森美半导体 | |||
JFET Chopper Transistors JFET Chopper Transistors N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode (Type A) designed for chopper and high−speed switching applications. Features • Low Drain−Source “ON” Resistance: RDS(on) = 30 for 2N5638 RDS(on) = 60 for 2N5639 • Low Reverse Tr | ONSEMI 安森美半导体 | |||
N-Channel Switch N-Channel Switch • This device is designed for low level analog switchng, sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 51. | FAIRCHILD 仙童半导体 | |||
JFET Chopper Transistors JFET Chopper Transistors N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode (Type A) designed for chopper and high−speed switching applications. Features • Low Drain−Source “ON” Resistance: RDS(on) = 30 for 2N5638 RDS(on) = 60 for 2N5639 • Low Reverse Tr | ONSEMI 安森美半导体 | |||
P-CHANNEL JFET GENERAL INFORMATION/CROSS REFERENCES | INTERSIL | |||
N-Channel JFETs [TAITRON] P-Channel Power MOSFETs N-Channel JFETs N-Channel Metal Can JFETs | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Silicon NPN Power Transistors 文件:131.38 Kbytes Page:3 Pages | ISC 无锡固电 | |||
Silicon NPN Power Transistors 文件:123.66 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon NPN Power Transistors 文件:114.14 Kbytes Page:3 Pages | SAVANTIC | |||
Bipolar NPN Device 文件:11.29 Kbytes Page:1 Pages | SEME-LAB | |||
Silicon NPN Power Transistors 文件:112.56 Kbytes Page:3 Pages | SAVANTIC | |||
Silicon NPN Power Transistors 文件:105.1 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon NPN Power Transistors 文件:113.82 Kbytes Page:3 Pages | SAVANTIC | |||
封装/外壳:TO-204AA,TO-3 包装:散装 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | MICROCHIP 微芯科技 | |||
Silicon NPN Power Transistors 文件:105.1 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
High-Voltage - High Power Transistors | ONSEMI 安森美半导体 | |||
封装/外壳:TO-204AA,TO-3 包装:散装 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | MICROCHIP 微芯科技 | |||
Trans GP BJT NPN 100V 10A 3-Pin(2+Tab) TO-3 Sleeve | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package 文件:11.3 Kbytes Page:1 Pages | SEME-LAB | |||
Silicon NPN Power Transistors 文件:113.37 Kbytes Page:3 Pages | SAVANTIC | |||
Silicon NPN Power Transistors 文件:109 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon NPN Power Transistors 文件:109 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon NPN Power Transistors 文件:113.37 Kbytes Page:3 Pages | SAVANTIC | |||
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package 文件:11.29 Kbytes Page:1 Pages | SEME-LAB | |||
Bipolar NPN Device 文件:11.29 Kbytes Page:1 Pages | SEME-LAB | |||
Trans GP BJT NPN 140V 15A 3-Pin(2+Tab) TO-3 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon NPN Power Transistors 文件:113.37 Kbytes Page:3 Pages | SAVANTIC | |||
JFET Chopper Transistors N-Channel - Depletion 文件:51.73 Kbytes Page:3 Pages | ONSEMI 安森美半导体 | |||
JFET Chopper Transistors N-Channel - Depletion 文件:51.73 Kbytes Page:3 Pages | ONSEMI 安森美半导体 |
2N563产品属性
- 类型
描述
- VCBO(V):
140
- VCEO(V):
140
- PD(W):
200
- PACKAGE:
TO-3
- NPN:
2N5631
- PNP:
2N6031
- HFE(Min/Max):
15/60
- IC/VCE(A/V):
8.0/2.0
- VCE(SAT)(V):
1.0
- IC / IB(A/mA):
10/1A
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON Semiconductor |
25+ |
TO-92 |
800000 |
只做原厂原装正品 |
|||
FSC |
2450+ |
TO92 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
FSC |
24+ |
TO-92 |
53950 |
||||
GS |
25+23+ |
TO-93 |
51707 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
GS |
26+ |
TO-93 |
86910 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
FSC |
22+ |
TO92 |
20000 |
公司只有原装 品质保证 |
|||
GS |
2447 |
TO-93 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ON |
23+ |
TO-92 |
6107 |
专注配单,只做原装进口现货 |
|||
GS |
3 |
TO-93 |
733 |
原装正品 |
|||
原厂 |
25+ |
428 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
2N563规格书下载地址
2N563参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2N5655G
- 2N5655
- 2N5654
- 2N5653
- 2N5652
- 2N5651
- 2N5650
- 2N565
- 2N5646
- 2N5645
- 2N5644
- 2N5643
- 2N5642
- 2N5641
- 2N5640
- 2N564
- 2N5639G
- 2N5639
- 2N5638
- 2N5637
- 2N5636
- 2N5635
- 2N5634
- 2N5633
- 2N5632
- 2N5631
- 2N5630
- 2N5629
- 2N5628
- 2N5627
- 2N5626
- 2N5625
- 2N5624
- 2N5623
- 2N5622
- 2N5621
- 2N5620
- 2N5619
- 2N5618
- 2N5617
- 2N5616
- 2N5615
- 2N5614
- 2N5613
- 2N5612A
- 2N5612
- 2N5611A
- 2N5611
- 2N5610
2N563数据表相关新闻
2N6027RLRAG坚持只做原装货
2N6027RLRAG坚持只做原装货
2024-9-192N5192G原包原标原装现货
2N5192G原包原标原装现货
2023-5-112N60G-TO220FT-A-TG_UTC代理商
2N60G-TO220FT-A-TG_UTC代理商
2023-3-72N5401L-SOT89R-B-TG_UTC代理商
2N5401L-SOT89R-B-TG_UTC代理商
2023-2-102N6043G
原装代理
2022-7-232N5245
2N5245,当天发货0755-82732291全新原装现货或门市自取.
2020-8-5
DdatasheetPDF页码索引
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