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2N5632晶体管资料

  • 2N5632别名:2N5632三极管、2N5632晶体管、2N5632晶体三极管

  • 2N5632生产厂家:美国摩托罗拉半导体公司_美国硅晶体技术公司_美国晶

  • 2N5632制作材料:Si-NPN

  • 2N5632性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2N5632封装形式:直插封装

  • 2N5632极限工作电压:100V

  • 2N5632最大电流允许值:10A

  • 2N5632最大工作频率:>1MHZ

  • 2N5632引脚数:2

  • 2N5632最大耗散功率:150W

  • 2N5632放大倍数

  • 2N5632图片代号:E-44

  • 2N5632vtest:100

  • 2N5632htest:1000100

  • 2N5632atest:10

  • 2N5632wtest:150

  • 2N5632代换 2N5632用什么型号代替:BD317,BDX40,BDX50,BDX60,BDY57,BDY76,2N3772,2N3773,2SC2608,3DD71D,

型号 功能描述 生产厂家 企业 LOGO 操作
2N5632

SILICON POWER TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5632, 2N6229 series types are complementary silicon power transistors manufactured by the epitaxial base process mounted in a hermetically sealed metal case designed for high power amplifier and switching applications where high voltages are required.

CENTRAL

2N5632

COLLECTOR CURRENT = 10 AMPS NPN TYPES

[API ELECTRONICS, INC.] COLLECTOR CURRENT = 10 AMPS NPN TYPES

ETCList of Unclassifed Manufacturers

未分类制造商

2N5632

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For general-purpose power amplifier and switching applications

ISC

无锡固电

2N5632

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Low collector-emitter saturation voltage APPLICATIONS ·For general-purpose power amplifier and switching applications

JMNIC

锦美电子

2N5632

COMPLEMENTARY SILICON POWER TRANSISTORS

HIGH VOLTAGE HIGH POWER SILICON TRANSISTORS 10 AMPERE COMPLMEMTARY SILICON POWER TRANSISTORS 100-120-140 VOLTS 150 WATTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N5632

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For general-purpose power amplifier and switching applications

SAVANTIC

2N5632

Silicon NPN Power Transistors

文件:113.37 Kbytes Page:3 Pages

SAVANTIC

2N5632

Silicon NPN Power Transistors

文件:109 Kbytes Page:3 Pages

JMNIC

锦美电子

2N5632

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

文件:11.3 Kbytes Page:1 Pages

SEME-LAB

2N5632

封装/外壳:TO-204AA,TO-3 包装:散装 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

2N5632

Trans GP BJT NPN 100V 10A 3-Pin(2+Tab) TO-3 Sleeve

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

文件:109 Kbytes Page:3 Pages

JMNIC

锦美电子

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

文件:11.3 Kbytes Page:1 Pages

SEME-LAB

2N5632产品属性

  • 类型

    描述

  • Maximum Transition Frequency:

    1(Min)MHz

  • Maximum Power Dissipation:

    150000mW

  • Maximum DC Collector Current:

    10A

  • Maximum Collector Emitter Voltage:

    100V

  • Maximum Collector Emitter Saturation Voltage:

    2@10AV

  • Maximum Collector Base Voltage:

    100V

  • Configuration:

    Single

  • Category:

    Bipolar Power

更新时间:2026-5-14 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Microchip Technology / Atmel
25+
N/A
6843
样件支持,可原厂排单订货!
Microchip Technology / Atmel
25+
N/A
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
MOTOROLA
24+/25+
91
原装正品现货库存价优
MOTOROLA/摩托罗拉
24+
275
现货供应
FAIRCHILD
24+
原厂原封
6523
进口原装公司百分百现货可出样品
GS
25+23+
TO-93
51707
绝对原装正品现货,全新深圳原装进口现货
MOT
24+
TO-3
10000
FSC
22+
TO92
20000
公司只有原装 品质保证
MOTOROLA/摩托罗拉
23+
TO-59
8510
原装正品代理渠道价格优势
GS
26+
TO-93
86910
全新原装进口现货价格优惠 本公司承诺原装正品假一赔

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