封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：管件 描述：TRANS NPN 140V 0.6A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPNhigh-voltagetransistors

DESCRIPTION NPNhigh-voltagetransistorinaTO-92;SOT54plasticpackage.PNPcomplements:2N5400and2N5401. FEATURES •Lowcurrent(max.300mA) •Highvoltage(max.160V). APPLICATIONS •Switchingandamplificationinhighvoltageapplicationssuchastelephony.

NPNEPITAXIALSILICONTRANSISTOR

AmplifierTransistor •Collector-EmitterVoltage:VCEO=140V •CollectorDissipation:PC(max)=625mW

NPNSiliconExpitaxialPlanarTransistorforgeneralpurpose,highvoltageamplifierapplications????

NPNSiliconExpitaxialPlanarTransistorforgeneralpurpose,highvoltageamplifierapplications.

NPNEPITAXIALSILICONTRANSISTOR

AmplifierTransistor •Collector-EmitterVoltage:VCEO=140V •CollectorDissipation:PC(max)=625mW

EPITAXIALPLANARNPNTRANSISTOR(GENERALPURPOSE,HIGHVOLTAGE)

GENERALPURPOSEAPPLICATION. HIGHVOLTAGEAPPLICATION. FEATURES •HighCollectorBreakdwonVoltage :VCBO=160V,VCEO=140V •LowLeakageCurrent. :ICBO=100nA(Max.)VCB=100V •LowSaturationVoltage :VCE(sat)=0.25V(Max.)IC=50mA,IB=5mA •LowNoise:NF=10dB(Max.)