POWER TRANSISTORS NPN SILICON

High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303) • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc

200 WATT NPN SILICON POWER TRANSISTOR

FEATURES • HFE ---------------------------- 15-60 @ 15 Amps • VCE(sat) ---------------------------- 2.0 V @ 20 Amps • Fast Switching 1 μsec Rise Time • Excellent Safe Operating Area

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N4398/4399/5745 • Low collector/saturation voltage • Excellent safe operating area APPLICATIONS • For use in power amplifier and switching circuits applications.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N4398/4399/5745 • Low collector/saturation voltage • Excellent safe operating area APPLICATIONS • For use in power amplifier and switching circuits applications.

Bipolar NPN Device in a Hermetically sealed TO3

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