丝印代码：2N5172；TO-92 Plastic-Encapsulate Transistors

Features General Purpose Amplifier Transistor

丝印代码：2N5172；TO-92 Plastic-Encapsulate Transistors

Features General Purpose Amplifier Transistor

SI PNP POWER BJT

Description: Si PNP Power BJT

silicon transistors UHF/VHF power transistors

silicon transistors UHF/VHF power transistors NPN type germanium transistors diffused-base MESA transistors ultra-high-speed switching

N-CHANNEL JFET

Description: N-Channel JFET

N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES

General-Purpose Device Types

LOW POWER FIELD EFFECT TRANSISTORS

LOW POWER FIELD EFFECT TRANSISTORS GENERAL PURPOSE N-CHANNEL

LOW POWER FIELD EFFECT TRANSISTORS

LOW POWER FIELD EFFECT TRANSISTORS GENERAL PURPOSE N-CHANNEL

N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES

General-Purpose Device Types

N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES

General-Purpose Device Types

GENERAL PURPOSE AMPS

GENERAL PURPOSE AMPS

LOW POWER FIELD EFFECT TRANSISTORS

LOW POWER FIELD EFFECT TRANSISTORS GENERAL PURPOSE N-CHANNEL

SI NPN LP HF BJT

Description: Si NPN LP HF BJT

SI NPN POWER BJT

Description: Si NPN Power BJT, I(C)

silicon transistors UHF/VHF power transistors

silicon transistors UHF/VHF power transistors NPN type germanium transistors diffused-base MESA transistors ultra-high-speed switching

isc Silicon NPN Power Transistor

DESCRIPTION • High Current-Gain Bandwidth Product : fT= 1200MHz (Min) @VCE = 10V,IE = 50mA • Low Saturation Voltage • Good Linearity of hFE APPLICATIONS • Designed for general purpose Class C amplifier applications up to 1 GHz

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION: The 2N5108 is a Designed for General Purpose Class C Amplifier Applications Up to 1 GHz. FEATURES: • GPE = 6.0 dB Typ. at 1.0 GHz • FT = 1,500 MHz Typ. at 15 V/ 50 mA • Hermetic TO-39 Package

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION: The 2N5109 is a High Frequency Transistor for General Purpose Amplifier Applications.

Small Signal Transistors

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4928 series types are PNP Silicon Transistors designed for general purpose applications.

SILICON NPN RF TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a silicon NPN epitaxial planar RF transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING: FULL PART NUMBER

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. Features · Silicon NPN, To-39 packaged VHF/UHF Transistor · 1.2 GHz Current

silicon transistors UHF/VHF power transistors

silicon transistors UHF/VHF power transistors NPN type germanium transistors diffused-base MESA transistors ultra-high-speed switching

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: The 2N5109 is a silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. It is also suitable for oscillator and frequency-multiplier functions. Features · Silicon NPN, To-39 packaged VHF/UHF Transisto

Type 2N5109 Geometry 1007 Polarity NPN

Features: • VHF-UHF amplifier silicon transistor. • Housed in TO-39 case. • Also available in chip form using the 1007 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/398 which Semicoa meets in all cases.

2.5W NPN RF BJT Transistor

This BJT is packaged in TO-39 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

PNP SILICON POWER TRANSISTOR

PNP Silicon Power Transistor

Linear Systems replaces discontinued Siliconix

Linear Systems replaces discontinued Siliconix 2N5114 This analog switch is designed for inverting switching into inverting input of an Operational Amplifier. The hermetically sealed TO-18 package is well suited for hi-reliability and harsh environment applications. FEATURES ▪ DIRECT REPLACEMEN

P-CHANNEL J-FET

DESCRIPTION This leaded device is available in high-reliability equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. FEATURES • Surface mount equivalent to JEDEC registered 2N5116. • Screen

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

P-Channel JFET Switch

GENERAL DESCRIPTION Ideal for inverting switching or Virtual Gnd switching into inverting input of Op. Amp. No driver is required and ±10VAC signals can be handled using only +5V logic (TTL or CMOS). FEATURES • Low ON Resistance • ID(off)

SILICON P-CHANNEL JFETS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5114, 2N5115, and 2N5116 are silicon P-Channel JFETs designed for switching applications.

SINGLE P-CHANNEL JFET

FEATURES ● DIRECT REPLACEMENT FOR SILICONIX 2N5114 ● LOW ON RESISTANCE 75Ω ● LOW CAPACITANCE 6pF

P-Channel Silicon Junction Field-Effect Transistor

● Analog Switches Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage – 40 V Gate Current 50 mA Continuous Device Power Dissipation 500mW Power Derating

P-CHANNEL J-FET

P-Channel JFET Switch

GENERAL DESCRIPTION Ideal for inverting switching or Virtual Gnd switching into inverting input of Op. Amp. No driver is required and ±10VAC signals can be handled using only +5V logic (TTL or CMOS). FEATURES • Low ON Resistance • ID(off)

P-Channel JFET Switch

GENERAL DESCRIPTION Ideal for inverting switching or Virtual Gnd switching into inverting input of Op. Amp. No driver is required and ±10VAC signals can be handled using only +5V logic (TTL or CMOS). FEATURES • Low ON Resistance • ID(off)

SINGLE P-CHANNEL JFET

FEATURES ● DIRECT REPLACEMENT FOR SILICONIX 2N5114 ● LOW ON RESISTANCE 75Ω ● LOW CAPACITANCE 6pF

SILICON P-CHANNEL JFETS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5114, 2N5115, and 2N5116 are silicon P-Channel JFETs designed for switching applications.

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

P-CHANNEL J-FET

DESCRIPTION This leaded device is available in high-reliability equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. FEATURES • Surface mount equivalent to JEDEC registered 2N5116. • Screen

P-CHANNEL J-FET

P-CHANNEL J-FET

DESCRIPTION This leaded device is available in high-reliability equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. FEATURES • Surface mount equivalent to JEDEC registered 2N5116. • Screen

P-Channel JFET Switch

GENERAL DESCRIPTION Ideal for inverting switching or Virtual Gnd switching into inverting input of Op. Amp. No driver is required and ±10VAC signals can be handled using only +5V logic (TTL or CMOS). FEATURES • Low ON Resistance • ID(off)

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

SILICON P-CHANNEL JFETS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5114, 2N5115, and 2N5116 are silicon P-Channel JFETs designed for switching applications.

SINGLE P-CHANNEL JFET

FEATURES ● DIRECT REPLACEMENT FOR SILICONIX 2N5114 ● LOW ON RESISTANCE 75Ω ● LOW CAPACITANCE 6pF

Linear Systems replaces discontinued Siliconix

This analog switch is designed for inverting switching into inverting input of an Operational Amplifier. The hermetically sealed TO-18 package is well suited for hi-reliability and harsh environment applications. FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5116 LOW ON RESISTANCE rDS(o

P-CHANNEL J-FET

P-CHANNEL JFET

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

DIELECTRICALLY ISOLATED DUAL PNP GENERAL PURPOSE AMPLLIFIER

FEATURES ● High Gain at Low Current ● Low Output Capacitance ● Good hFE match ● Tight VBE Tracking ● Dielectrically Isolated Matched Pairs for Differential Amplifiers

DIELECTRICALLY ISOLATED DUAL PNP GENERAL PURPOSE AMPLLIFIER

FEATURES ● High Gain at Low Current ● Low Output Capacitance ● Good hFE match ● Tight VBE Tracking ● Dielectrically Isolated Matched Pairs for Differential Amplifiers

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

DIELECTRICALLY ISOLATED DUAL PNP GENERAL PURPOSE AMPLLIFIER

FEATURES ● High Gain at Low Current ● Low Output Capacitance ● Good hFE match ● Tight VBE Tracking ● Dielectrically Isolated Matched Pairs for Differential Amplifiers

PHYSICAL DIMENSIONS

Small Signal Transistors

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4928 series types are PNP Silicon Transistors designed for general purpose applications.

Small Signal Transistors

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4928 series types are PNP Silicon Transistors designed for general purpose applications.

SI NPN POWER BJT

N-P-N SILICON POWER TRANSISTORS HIGH-FREQUENCY POWER TRANSISTORS WITH COMPUTER-DESIGNED ISOTHERMAL GEOMETRY ● For Complementary Use With 2N4999, 2N5001, 2N5147, and 2N5149 ● 6 mJ Reverse Energy Rating with IC = 5 A and 4 V Reverse Bias

NPN TO-39/TO-5

NPN TO-39/TO-5 Case 801 I(MAX) = 0.05 to 10 A VCEO(sus) = 40 • 800V fT = 1 to 50 MHz