位置:首页 > IC中文资料 > 2N492

2N492晶体管资料

  • 2N492(A)别名:2N492(A)三极管、2N492(A)晶体管、2N492(A)晶体三极管

  • 2N492(A)生产厂家

  • 2N492(A)制作材料:UJT-P

  • 2N492(A)性质

  • 2N492(A)封装形式:直插封装

  • 2N492(A)极限工作电压:60V

  • 2N492(A)最大电流允许值:0.07A

  • 2N492(A)最大工作频率:<1MHZ或未知

  • 2N492(A)引脚数:4

  • 2N492(A)最大耗散功率

  • 2N492(A)放大倍数

  • 2N492(A)图片代号:D-13

  • 2N492(A)vtest:60

  • 2N492(A)htest:999900

  • 2N492(A)atest:0.07

  • 2N492(A)wtest:0

  • 2N492(A)代换 2N492(A)用什么型号代替

2N492价格

参考价格:¥1.6428

型号:2N4920 品牌:MULTICOMP 备注:这里有2N492多少钱,2026年最近7天走势,今日出价,今日竞价,2N492批发/采购报价,2N492行情走势销售排行榜,2N492报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2N492

UNIJUNCTION TRANSISTORS

UNIJUNCTION TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N492

Diode

UNIJUNCTION TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N492

NPN SILICON UNIJUNCTION TRANSISTOR

NPN SILICON UNIJUNCTION TRANSISTOR Silicon unijunction transistors are three-terminal device having a stable “N” type negative resistance characteristic over a wide temperature range. FEATURES • Stable operation over wide temperature range • Low leakage current • Low peak point current • Gua

DIGITRON

2N492

Unijunction Transistors

This Unijuction Transistor is packaged in TO-5 package, which has a power rating of 450mW.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

DIGITRON

MEDIUM-POWER PLASTIC PNP SILICON TRANSISTORS

. . . designed for driver circuits, switching, and amplifier applications. These high-performance plastic devices feature: Features • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp • Excellent Power Dissipation Due to Thermopad Construction - PD = 30 and 40 W @ TC =

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4918, 2N4919, and 2N4920 are Silicon PNP Expitaxial Base Power Transistors designed for Medium power amplifier and switching applications.

CENTRAL

Bipolar Transistor

Description: Medium Power Plastic PNP, TO-126, Silicon Transistor. Designed for driver circuits, switching and amplifier applications. Features: • Low Saturation Voltage : Vce(sat) 0.6V DC, Ic = 1A • Excellent power dissipation due to Thermopad Construction Pd = 30 @ Tc = 25°C Description

MULTICOMP

易络盟

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N4921/4922/4923 • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For driver circuits ,switching ,and amplifier applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N4921/4922/4923 • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For driver circuits ,switching ,and amplifier applications

SAVANTIC

GENERAL.PURPOSE POWER TRANSISTORS

These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct

ONSEMI

安森美半导体

Medium-Power Plastic PNP

These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct

ONSEMI

安森美半导体

Medium-Power Plastic PNP Silicon Transistors

These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct

ONSEMI

安森美半导体

Medium-Power Plastic PNP

These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct

ONSEMI

安森美半导体

1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS

These high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construction − PD = 30 W @ TC = 25°C • Excellent Safe Ope

ONSEMI

安森美半导体

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N4918/4919/4920 • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For driver circuits ,switching ,and amplifier applications

SAVANTIC

MEDIUM-POWER PLASTIC NPN SILICON TRANSISTORS

Medium-Power Plastic NPN Silicon Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N4918/4919/4920 • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For driver circuits ,switching ,and amplifier applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N4918/4919/4920 • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For driver circuits ,switching ,and amplifier applications

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N4918/4919/4920 • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For driver circuits ,switching ,and amplifier applications

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N4918/4919/4920 • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For driver circuits ,switching ,and amplifier applications

ISC

无锡固电

MEDIUM-POWER PLASTIC NPN SILICON TRANSISTORS

Medium-Power Plastic NPN Silicon Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N4918/4919/4920 • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For driver circuits ,switching ,and amplifier applications

SAVANTIC

1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS

These high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construction − PD = 30 W @ TC = 25°C • Excellent Safe Ope

ONSEMI

安森美半导体

1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS

These high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construction − PD = 30 W @ TC = 25°C • Excellent Safe Ope

ONSEMI

安森美半导体

NPN SILICON EPITAXIAL TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR General Purpose Power Transistor

BOCA

博卡

NPN SILICON EPITAXIAL TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR General Purpose Power Transistor

CDIL

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N4918/4919/4920 • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For driver circuits ,switching ,and amplifier applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N4918/4919/4920 • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For driver circuits ,switching ,and amplifier applications

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2N4918/4919/4920 • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For driver circuits ,switching ,and amplifier applications

ISC

无锡固电

MEDIUM-POWER PLASTIC NPN SILICON TRANSISTORS

Medium-Power Plastic NPN Silicon Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal Transistors

Small Signal Transistors

CENTRAL

Small Signal Transistors

Small Signal Transistors

CENTRAL

Small Signal Transistors

Small Signal Transistors

CENTRAL

NPN TO-39/TO-5

NPN TO-39/TO-5 Case 801 I(MAX) = 0.05 to 10 A VCEO(sus) = 40 • 800V fT = 1 to 50 MHz

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal Transistors

Small Signal Transistors

CENTRAL

NPN TO-39/TO-5

NPN TO-39/TO-5 Case 801 I(MAX) = 0.05 to 10 A VCEO(sus) = 40 • 800V fT = 1 to 50 MHz

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH-VOLTAGE PNP SILICON ANNULAR TRANSISTORS

High-voltage PNP silicon annular transistors for use in general-purpose high-voltage applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4928 series types are PNP Silicon Transistors designed for general purpose applications.

CENTRAL

Small Signal Transistors

Small Signal Transistors

CENTRAL

Small Signal Transistors

Small Signal Transistors

CENTRAL

PNP SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4928 series types are PNP Silicon Transistors designed for general purpose applications.

CENTRAL

HIGH-VOLTAGE PNP SILICON ANNULAR TRANSISTORS

High-voltage PNP silicon annular transistors for use in general-purpose high-voltage applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Diode

UNIJUNCTION TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

UNIJUNCTION TRANSISTORS

UNIJUNCTION TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON UNIJUNCTION TRANSISTOR

NPN SILICON UNIJUNCTION TRANSISTOR Silicon unijunction transistors are three-terminal device having a stable “N” type negative resistance characteristic over a wide temperature range. FEATURES • Stable operation over wide temperature range • Low leakage current • Low peak point current • Gua

DIGITRON

NPN SILICON UNIJUNCTION TRANSISTOR

NPN SILICON UNIJUNCTION TRANSISTOR Silicon unijunction transistors are three-terminal device having a stable “N” type negative resistance characteristic over a wide temperature range. FEATURES • Stable operation over wide temperature range • Low leakage current • Low peak point current • Gua

DIGITRON

UNIJUNCTION TRANSISTORS

UNIJUNCTION TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Diode

UNIJUNCTION TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

UNIJUNCTION TRANSISTORS

UNIJUNCTION TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON UNIJUNCTION TRANSISTOR

NPN SILICON UNIJUNCTION TRANSISTOR Silicon unijunction transistors are three-terminal device having a stable “N” type negative resistance characteristic over a wide temperature range. FEATURES • Stable operation over wide temperature range • Low leakage current • Low peak point current • Gua

DIGITRON

Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

CENTRAL

Trans GP BJT PNP 80V 3A 3-Pin TO-225 Bulk

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

文件:106.51 Kbytes Page:3 Pages

SAVANTIC

Medium-Power Plastic PNP Silicon Transistors

文件:203.99 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Medium-Power Plastic PNP Silicon Transistors

文件:120.83 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Medium-Power Plastic PNP Silicon Transistors

文件:120.83 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Medium-Power Plastic PNP Silicon Transistors

文件:203.99 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Medium?뭁ower Plastic NPN Silicon Transistors

文件:90.97 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Silicon NPN Power Transistors

文件:106.11 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:47.08 Kbytes Page:3 Pages

JMNIC

锦美电子

2N492产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Polarity:

    PNP

  • Type:

    General Purpose

  • VCE(sat) Max (V):

    0.6

  • IC Cont. (A):

    1

  • VCEO Min (V):

    80

  • VCBO (V):

    80

  • VEBO (V):

    5

  • VBE(sat) (V):

    1.3

  • VBE(on) (V):

    1.3

  • hFE Min:

    30

  • hFE Max:

    150

  • fT Min (MHz):

    3

  • PTM Max (W):

    30

  • Package Type:

    TO-225-3

更新时间:2026-8-1 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
TO-225
1259
原厂订货渠道,支持BOM配单一站式服务
MOT
23+
TO126
6800
只做原装正品假一赔十为客户做到零风险!!
ONSEMI/安森美
2025+
2500
原装进口价格优 请找坤融电子!
ONSEMI/安森美
25+
TO-126
45000
ONSEMI/安森美全新现货2N4922G即刻询购立享优惠#长期有排单订
ON/安森美
26+
TO-126
18000
原装正品,可配单,支持实单
onsemi(安森美)
25
TO-225
21
QQ询价 绝对原装正品
ON
24+
TO-126
9700
绝对原装正品现货假一罚十
ON(安森美)
23+
TO-225
11633
公司只做原装正品,假一赔十
ON
25+
原装优势现货
125000
原装优势现货
ON
23+
TO-126-3
8900
进口原装现货

2N492数据表相关新闻