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2N4232A晶体管资料

  • 2N4232A别名:2N4232A三极管、2N4232A晶体管、2N4232A晶体三极管

  • 2N4232A生产厂家:美国摩托罗拉半导体公司

  • 2N4232A制作材料:Si-NPN

  • 2N4232A性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2N4232A封装形式:直插封装

  • 2N4232A极限工作电压:50V

  • 2N4232A最大电流允许值:5A

  • 2N4232A最大工作频率:>4MHZ

  • 2N4232A引脚数:2

  • 2N4232A最大耗散功率:75W

  • 2N4232A放大倍数

  • 2N4232A图片代号:E-44

  • 2N4232Avtest:50

  • 2N4232Ahtest:4000100

  • 2N4232Aatest:5

  • 2N4232Awtest:75

  • 2N4232A代换 2N4232A用什么型号代替:BD243A,BD539B,BD951,2N3054,3DD67C,

型号 功能描述 生产厂家 企业 LOGO 操作
2N4232A

Bipolar NPN Device in a Hermetically sealed TO66

Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. Bipolar NPN Device. VCEO = 60V IC = 5A

SEME-LAB

2N4232A

Power Transistors

Power Transistors TO-66 Case

CENTRAL

2N4232A

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N4232A

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N4232A

isc Silicon NPN Power Transistor

DESCRIPTION • Excellent Safe Operating Area • Low Collector-Emitter Saturation Voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS • Designed for general-purpose power amplifier and switching applications

ISC

无锡固电

2N4232A

POWER TRANSISTORS(5A,75W)

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0.

MOSPEC

统懋

2N4232A

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0.

BOCA

博卡

2N4232A

COMPLEMENTARY SILICON POWER TRANSISTORS

文件:344.67 Kbytes Page:2 Pages

CENTRAL

2N4232A

包装:散装 描述:PNP TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

2N4232A

Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

CENTRAL

2N4232A

三极管

MOSPEC

统懋

2N4232A

Bipolar Junction Transistors

TTELEC

Power Transistors

Power Transistors TO-66 Case

CENTRAL

Bipolar NPN Device in a Hermetically sealed TO66 Metal Package

文件:11.91 Kbytes Page:1 Pages

SEME-LAB

Bipolar NPN Device in a Hermetically sealed TO66 Metal Package

文件:11.91 Kbytes Page:1 Pages

SEME-LAB

2N4232A产品属性

  • 类型

    描述

  • VCBO (V):

    60

  • VCEO (V):

    60

  • PD (W):

    75

  • PACKAGE:

    TO-66

  • NPN:

    2N4232A

  • PNP:

    2N6313

  • HFE (Min/Max):

    25/100

  • IC/VCE (A/V):

    1.5/2.0

  • VCE(SAT) (V):

    0.7

  • IC / IB (A/mA):

    1.5/150

更新时间:2026-5-14 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi
25+
TO-39
12369
样件支持,可原厂排单订货!
onsemi
25+
TO-39
12421
正规渠道,免费送样。支持账期,BOM一站式配齐
MOTOROLA/摩托罗拉
20+
TO-66
67500
原装优势主营型号-可开原型号增税票
N/A
24+/25+
37
原装正品现货库存价优
原厂
2540+
CAN3
6852
只做原装正品假一赔十为客户做到零风险!!
MOT
24+
CAN3
4231
公司原厂原装现货假一罚十!特价出售!强势库存!
ASI
QQ咨询
TO-02
226
全新原装 研究所指定供货商
N/A
23+
NA
15659
振宏微专业只做正品,假一罚百!
ASI
24+
TO-02
1500
AI芯片,车规MCU原装现货/为新能源汽车电子行业采购保驾护航
MOT
25+23+
38327
绝对原装正品全新进口深圳现货

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