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2N4232A晶体管资料
2N4232A别名：2N4232A三极管、2N4232A晶体管、2N4232A晶体三极管
2N4232A生产厂家：美国摩托罗拉半导体公司
2N4232A制作材料：Si-NPN
2N4232A性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2N4232A封装形式：直插封装
2N4232A极限工作电压：50V
2N4232A最大电流允许值：5A
2N4232A最大工作频率：>4MHZ
2N4232A引脚数：2
2N4232A最大耗散功率：75W
2N4232A放大倍数：
2N4232A图片代号：E-44
2N4232Avtest：50
2N4232Ahtest：4000100
- 2N4232Aatest：5
2N4232Awtest：75
2N4232A代换 2N4232A用什么型号代替：BD243A,BD539B,BD951,2N3054,3DD67C,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N4232A | Bipolar NPN Device in a Hermetically sealed TO66 Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. Bipolar NPN Device. VCEO = 60V IC = 5A | SEME-LAB Seme LAB |   | |
2N4232A | Power Transistors Power Transistors TO-66 Case | Central | | |
2N4232A | COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2N4232A | COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2N4232A | isc Silicon NPN Power Transistor DESCRIPTION • Excellent Safe Operating Area • Low Collector-Emitter Saturation Voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS • Designed for general-purpose power amplifier and switching applications | ISC 无锡固电 | | |
2N4232A | POWER TRANSISTORS(5A,75W) COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0. | MOSPEC 统懋 | | |
2N4232A | COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0. | boca 博卡 | | |
2N4232A | COMPLEMENTARY SILICON POWER TRANSISTORS 文件：344.67 Kbytes Page：2 Pages | Central | | |
2N4232A | 包装：散装 描述：PNP TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Microchip 微芯科技 | | |
2N4232A | Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch | Central | | |
2N4232A | 三极管 | MOSPEC 统懋 | | |
2N4232A | Bipolar Junction Transistors | TTELEC | | |
Power Transistors Power Transistors TO-66 Case | Central | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package 文件：11.91 Kbytes Page：1 Pages | SEME-LAB Seme LAB | |
2N4232A产品属性
- 类型
描述
- 型号
2N4232A
- 制造商
Microsemi Corporation
- 功能描述
TRANS GP BJT NPN 60V 5A 3PIN TO-66 - Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA/摩托罗拉 |
23+ |
CAN |
4600 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
TI |
BGA |
6850 |
莱克讯每片来自原厂原盒原包装假一罚十价优 |
||||
MOTOROLA/摩托罗拉 |
23+ |
CAN3 |
50000 |
全新原装正品现货,支持订货 |
|||
ASI |
QQ咨询 |
TO-02 |
226 |
全新原装 研究所指定供货商 |
|||
24+ |
TO-66 |
10000 |
全新 |
||||
ASI |
24+ |
TO-02 |
200 |
进口原装正品优势供应 |
|||
MOTOROLA |
专业铁帽 |
TO-66 |
1000 |
原装铁帽专营,代理渠道量大可订货 |
|||
MOT |
24+ |
35200 |
一级代理分销/放心采购 |
||||
MOTOROLA/摩托罗拉 |
20+ |
TO-66 |
67500 |
原装优势主营型号-可开原型号增税票 |
|||
MOT |
24+ |
CAN3 |
6540 |
原装现货/欢迎来电咨询 |
2N4232A规格书下载地址
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DdatasheetPDF页码索引
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